MARKING CODE YV Search Results
MARKING CODE YV Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CD4527BNS |
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CMOS BCD Rate Multiplier 16-SO |
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LMV221SD/NOPB |
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50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-WSON -40 to 85 |
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MARKING CODE YV Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
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1N821 1N4733A 1N821A 1N4734A 1N823 1N4735A 1N823A C5V6 ph C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
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GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a | |
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
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GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A | |
smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
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1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89 | |
Contextual Info: DB LECTRO Inc. SMAJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 TO 170 Volts 400Watts Peak Pulse Power SMAJ PART NUMBER DEVICE MARKING CODE UNI-POLAR BI-POLAR UNI BI SMAJ5.0A SMAJ6.0A SMAJ6.5A SMAJ7.0A SMAJ7.5A SMAJ8.0A SMAJ8.5A SMAJ9.0A |
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400Watts SMAJ10A SMAJ11A SMAJ12A SMAJ13A SMAJ14A SMAJ15A SMAJ16A SMAJ17A SMAJ18A | |
pmf7Contextual Info: PMF 200W Series SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 180 Volts 200 Watt Peak Pulse Power " * " 标注为常用型号 " * " Stand for commonly used models REVER DEVICE BREAKDOW MARKING SESTAND N VOLTAGE PART NUMBER -OFF CODE |
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PMF10A PMF11A PMF12A PMF13A PMF14A PMF15A PMF16A PMF17A PMF18A PMF19A pmf7 | |
Contextual Info: SIEMENS Silicon N Channel MOSFET Tetrode BF 964 S • For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners Type Marking Ordering Code BF 964 S - Q62702-F446 Pin Configuration 1 2 3 4 S D Gz Package1 Gì |
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Q62702-F446 EHT07163 6235b05 BF964S EHM07007 fl235bOS | |
ERC01
Abstract: SV 04f
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ERC01 ERC01 SV 04f | |
ERA32
Abstract: T460 T151 T760 marking code CV3
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ERA32 28MIN 28MINâ I95t/R89) Shl50 T460 T151 T760 marking code CV3 | |
ERA82-004
Abstract: P151 T151 T810 T930 a316
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ERA82-004 l95t/R89 P151 T151 T810 T930 a316 | |
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Contextual Info: •I bbS3T31 0024342 762 W A P X N AUER PHI LIPS/DISCRETE BAT54A; C; S b7E D yv SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky Barrier double diodes with an integrated p-n junction protection ring in a microminiature SOT-23 envelope intended for surface mounting. |
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bbS3T31 BAT54A; OT-23 UBB175 BAT54A | |
Contextual Info: f-yVW Pto S W B a î / T 8: / * Aluminium Electrolytic Chip Capacitors V & G 's 'J - X Aluminium Electrolytic Chip Capacitors Type V Series G • i$ÜEfc£PH1 : 105 °C 1000 h m I Features • P ro d u c t line-up o f 0 8 , 010 • 0 8 , 0 1 O p h 7 'Í > T - / y ’ lZ ¿ T # * $ S |í |
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M39029/101-553Contextual Info: REV ECN APP'D 5277 JT 12-28-05 6078/ t VT~ s //*YVJ - A 4X R.050 MAX 3 X 0 .1 5 0 .150 TYP .500 -GASKET SUPPLIED WITH RELAY PIN MARKING PER TABLE RELAY PHILLIPS MTG SCREW, S.S. CONICAL SPRING COMPRESSED DAJE C0DE 1. MATERIALSSOCKET BODY: POLYETHERIMIDE PER ASTM-D-5205 |
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ASTM-D-5205 MIL-PRF-12883/44. M39029/101-553 JRE400110 JRE400101 JRE400100 JRE400111 17-Mar-04 E400100 | |
Contextual Info: 7 1 1 D Ô 2 b G G b a 3 7 T 630 » P H I N BB619 yv. VHF VARIABLE CAPACITANCE DIODE The BB619 is a VHF variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 MHz in all-band tuners. The diode is encapsulated in a hermetically sealed SOD123 plastic envelope suitable fo r surface mounting. |
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BB619 BB619 OD123 OD123. | |
Contextual Info: • bbSBTBl D024415 b3S W A P X N AMER PHI LIP S/DISCRETE BB620 b7E D yv VHF VARIABLE CAPACITANCE DIODE The BB620 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band A up to 160 MHz in all-band tuners. |
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D024415 BB620 BB620 | |
Contextual Info: BBY39 yv DOUBLE VARIABLE CAPACITANCE DIODE The B B Y 3 9 is a double variable capacitance diode with a common cathode and mounted in a micro miniature envelope SOT-23 , suitable for surface mounting. The two diodes in one envelope are matched. The device is intended for application in electronic tuners in satellite T V systems. |
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BBY39 OT-23) | |
Transistor p1fContextual Info: • b b S B ' m 002Sflfl0 TTfl B A P X N AUER PHILIPS/DISCRETE PMBT5550 b7E T> yv SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor fo r general purposes and especially telephony applications and encapsulated in a SOT-23 envelope. |
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002Sflfl0 PMBT5550 OT-23 Transistor p1f | |
UCU20C16
Abstract: CK200 NIHON PULSE
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O-263 UCU20C16 c40-3 UL94V-0 UCU20Crj UCU20C16 CK200 NIHON PULSE | |
Contextual Info: • bbS3^3i ooesa'ii a?3 * apx N AMER PHILIPS/DISCRETE b7E » PMBTA42 PMBTA43 yv SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended fo r surface mounted applica tions. They are primarily intended for use in telephony and professional communication equipment. |
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PMBTA42 PMBTA43 | |
BSR19AContextual Info: • bbSB^Bl 0DE5Sfl5 &E7 H A P X N AMER PHI LIPS/ DISCRE TE b7E T> BSR19 BSR19A yv SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors for general purposes and especially telephony applications and encapsulated in a SOT-23 envelope. |
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BSR19 BSR19A OT-23 BSR20 BSR20A. BSR19 bb53T31 00255A7 BSR19A |