Untitled
Abstract: No abstract text available
Text: IDT77V222 Micro ABR SAR Device Errata Notes Supplemental Information The revision of the 77V222 Micro ABR SAR can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V222 Data Code L155PG X9901A
|
Original
|
IDT77V222
77V222
L155PG
X9901A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IDT77V252 ABR SAR Device Errata Notes Supplemental Information The revision of the 77V252 ABR SAR can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V252 Data Code L155PG X9901A The revision is also stored in the PCI configuration space at offset 0x08
|
Original
|
IDT77V252
77V252
L155PG
X9901A
|
PDF
|
adp3121
Abstract: No abstract text available
Text: ADP4000 Programmable Multi-Phase Synchronous Buck Converter with I2C Interface http://onsemi.com MARKING DIAGRAM LFCSP48 CASE 932AD Features Typical Applications • Servers • Desktop PC’s • POLs Memory xx # YYWW XXX CCC = Device Code = Pb−Free Package
|
Original
|
ADP4000
LFCSP48
932AD
ADP4000/D
adp3121
|
PDF
|
ntc 20 k
Abstract: adp400 adp3121
Text: ADP4000 Programmable Multi-Phase Synchronous Buck Converter with I2C Interface http://onsemi.com MARKING DIAGRAM LFCSP48 CASE 932AD Features Typical Applications • Servers • Desktop PC’s • POLs Memory xx # YYWW XXX CCC = Device Code = Pb−Free Package
|
Original
|
ADP4000
ADP4000.
ADP4000/D
ntc 20 k
adp400
adp3121
|
PDF
|
PEF 22624
Abstract: PEF 24624 pef 24624 infineon pef* 22624 SOCRATES B78421A1852A003 socrates PEF 22624 INFINEON marking pef 22624 marking CODE n3
Text: EP13 Interfacetransformer Socrates Bis familie 18.06.2004 Preliminary Datasheet Ordering Code: Matching IC Y786/51/01 B78421A1852A003 Infineon Socrates PEF 22624, PEF 24624, PEF 24625 Dimensions [mm]: Schematics: 5 7 N1 LineSide 2 4 ChipSide N3 N2 1 9 Marking:
|
Original
|
Y786/51/01
B78421A1852A003
PEF 22624
PEF 24624
pef 24624 infineon
pef* 22624
SOCRATES
B78421A1852A003
socrates PEF 22624
INFINEON marking pef
22624
marking CODE n3
|
PDF
|
MARKING CODE TBD
Abstract: No abstract text available
Text: v G en eral S e m ic o n d u c t o r % _GTF701 T-Filter with TVS Diode Array For EMI Filtering and ESD Protection Mechanical Data Features Case: SOT323-5 leaded package Molding Compound Flammability Rating: UL 94V-0 Marking Code: TBD Packaging: TBD
|
OCR Scan
|
GTF701
OT323-5
10MHz
MARKING CODE TBD
|
PDF
|
DSC4001
Abstract: marking C1s DSC400
Text: Tentative DSC4001 Total pages page DSC4001 Silicon NPN epitaxial planar type For general amplifier Marking Symbol : C1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
|
Original
|
DSC4001
DSC4001
marking C1s
DSC400
|
PDF
|
DSA4001
Abstract: a1r marking Marking a1s
Text: Tentative DSA4001 Total pages page DSA4001 Silicon PNP epitaxial planar type For general amplifier Marking Symbol : A1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
|
Original
|
DSA4001
DSA4001
a1r marking
Marking a1s
|
PDF
|
Q62705-K664
Abstract: Q62705-K633 KTY19M Q62705-K631 KTY11-6 Q62705-K348 TLE4905 Q62705K-695 TLE4905G Q62705-K262
Text: Type List and Ordering Codes alphanumeric List of Types in Alphanumerical Order Type Marking Ordering Code Connector Set for KTY19 (Splash-proof) Page Q62901-B80 376 KP100 see page 335 Q62705-K348 335 KP100 E6793 see page 335 Q62705-K435 348 Q62705-K432
|
Original
|
KTY19
KP100
E6793
KP110
KP120
KT110
KT130
KT210
KT230
Q62705-K664
Q62705-K633
KTY19M
Q62705-K631
KTY11-6
Q62705-K348
TLE4905
Q62705K-695
TLE4905G
Q62705-K262
|
PDF
|
TRANSISTOR SMD CODE 6.8
Abstract: tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5
Text: SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPPX2N60S5
|
Original
|
SPPX2N60S5
SPBX2N60S5
X2N60S5
P-TO220-3-1
P-TO263-3-2
21/Oct/1998
TRANSISTOR SMD CODE 6.8
tbd 380
DIODE smd marking Ag
MARKING CODE TBD
TRANSISTOR SMD MARKING CODE ag
SPBX2N60S5
SPPX2N60S5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Transistor SMBTA 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 70 s2C Q62702-M0003
|
OCR Scan
|
Q62702-M0003
OT-23
235b05
|
PDF
|
0918
Abstract: amplifier siemens gsm signal amplifier marking gain stage GaAs MMIC AMPLIFIER DCS1800 Q62702G0077 CGY0918 CGY 8 pin
Text: CGY 0918 GaAs MMIC l l l l Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
|
Original
|
35dBm
34dBm
Q62702G0077
0918
amplifier siemens
gsm signal amplifier
marking gain stage GaAs MMIC AMPLIFIER
DCS1800
Q62702G0077
CGY0918
CGY 8 pin
|
PDF
|
DIODE smd marking Ag
Abstract: MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs
Text: SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPUX6N60S5
|
Original
|
SPUX6N60S5
SPDX6N60S5
X6N60S5
P-TO251-3-1
P-TO252
21/Oct/1998
DIODE smd marking Ag
MARKING CODE TBD
TRANSISTOR SMD MARKING CODE ag
P-TO251-3-1
P-TO252
SPDX6N60S5
SPUX6N60S5
transistor smd marking Ag
TRANSISTOR SMD MARKING CODE GFs
|
PDF
|
Q67042-S4057
Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking
|
Original
|
SPP100N03S2-03
SPB100N03S2-03
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67042-S4058
PN0303
P-TO263-3-2
Q67042-S4057
Q67042-S4058
INFINEON PART MARKING
marking code br 39 SMD
SPB100N03S2-03
SPP100N03S2-03
PN0303
|
PDF
|
|
marking 802 soic8
Abstract: NB3N3010BDR2G DFN8 2X2
Text: NB3N3010B 3.3V, 12.288 MHz Audio Oversampling Clock Generator for USB Applications http://onsemi.com Description MARKING DIAGRAMS* 8 VDD 1 A L Y W M G 4 = Assembly Location = Wafer Lot = Year = Work Week = Date Code = Pb−Free Package Note: Microdot may be in either location
|
Original
|
NB3N3010B
NB3N3010B/D
marking 802 soic8
NB3N3010BDR2G
DFN8 2X2
|
PDF
|
Marking STMicroelectronics tqfp
Abstract: 33c marking TQFP48 TSA1201 TSA1401 TSA1401IF TSA1401IFT
Text: TSA1401 14-BIT, 52MSPS, 250mW A/D CONVERTER ADVANCED DATA • 14-bit A/D converter in deep submicron tech- ORDER CODE nology ■ Single supply voltage: 2.5V ■ Digital I/O supply voltage: 2.5V/3.3V compati- Part Number Temperature Range Package Conditioning Marking
|
Original
|
TSA1401
14-BIT,
52MSPS,
250mW
14-bit
EVAL1401/
52Msps
Marking STMicroelectronics tqfp
33c marking
TQFP48
TSA1201
TSA1401
TSA1401IF
TSA1401IFT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION MICRONAS Edition May 31, 2000 6251-528-1AI HAL 1000 Programmable Hall Switch HAL 1000 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code
|
Original
|
6251-528-1AI
|
PDF
|
TRANSISTOR SMD MARKING CODE ag
Abstract: MARKING CODE TBD P-TO251-3-1 ag TRANSISTOR SMD MARKING CODE DIODE smd marking Ag P-TO252 SPDX7N60S5 SPUX7N60S5
Text: SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated • 150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code
|
Original
|
SPUX7N60S5
SPDX7N60S5
X7N60S5
P-TO251-3-1
P-TO252
TRANSISTOR SMD MARKING CODE ag
MARKING CODE TBD
P-TO251-3-1
ag TRANSISTOR SMD MARKING CODE
DIODE smd marking Ag
P-TO252
SPDX7N60S5
SPUX7N60S5
|
PDF
|
SPPX4N60S5
Abstract: TRANSISTOR SMD MARKING CODE ag DIODE smd marking Ag SPBX4N60S5 X4N60S5
Text: SPPX4N60S5 SPBX4N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated • 150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code
|
Original
|
SPPX4N60S5
SPBX4N60S5
X4N60S5
P-TO220-3-1
P-TO263-3-2
SPPX4N60S5:
SPPX4N60S5
TRANSISTOR SMD MARKING CODE ag
DIODE smd marking Ag
SPBX4N60S5
X4N60S5
|
PDF
|
615N
Abstract: 615n60
Text: BSO 615N Preliminary data SIPMOS Small-Signal Transistor • Dual N-channel • Enhancement mode • Logic Level • Avalanche rated • VGS th = 1.2 .2.0 V Type VDS ID RDS(on) Package Marking Ordering Code BSO 615N 60 V 2.6 A 0.15 Ω P-DSO-8 Q 67000-S. . .
|
Original
|
67000-S.
615N
615n60
|
PDF
|
tyco USB connector
Abstract: amphenol usb connector
Text: A B C D E G F H REVISIONS 4.50 .177 2.00 .079 24.00 .945 10.20 .402 4.00 .157 REV DESCRIPTION, ECN, EAR NO. DATE APP'D D PRODUCT DRAWING EAR 13821 JAN 17/11 K.L. DATE CODE INK MARKING 1 8.38±0.40 .330±.016 1 18.00 .709 14.00 .551 13.64±0.40 .537±.016
|
Original
|
MAR01/07
P-MUSB-A211-XX
tyco USB connector
amphenol usb connector
|
PDF
|
21c3u
Abstract: KTY 19M KTY 10-6 KTY 10-5 KTY 10-62 KTY 11-5 KTY 110 marking AK KTY 10-7 KT 230
Text: SIEMENS Type List of Types in Alphanumerical Order Marking Ordering Code Page Connector Set for KTY19 — Splash-proof Q62901-B80 196 KMY 10 KMY 10 (or SMX-1) Q62702-R309 131 KMY24 KMY 24 Q62702-R323 135 KPY 32 R KPY 32 R Q62705-K150 139 KPY 32 RK KPY 32 RK
|
OCR Scan
|
Q62901-B80
Q62702-R309
Q62702-R323
Q62705-K150
Q62705-K266
Q62705-K151
Q62705-K274
Q62705-K159
Q62705-K204
Q62705-K323
21c3u
KTY 19M
KTY 10-6
KTY 10-5
KTY 10-62
KTY 11-5
KTY 110
marking AK
KTY 10-7
KT 230
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSO 615NV Preliminary data SIPMOS Small-Signal Transistor • Dual N-channel • Enhancement mode • Avalanche rated • VGS th =2.1 .4.0V Type VDS ID RDS(on) Package Marking Ordering Code BSO 615NV 60 V 3.1 A 0.12 Ω P-DSO-8 Q67000-S. . . Electrical Characteristics, at Tj = 25°C, unless otherwise specified
|
Original
|
615NV
Q67000-S.
|
PDF
|
pn0307
Abstract: BSPD50N03S2-07 SPD50N03S2-07
Text: SPD50N03S2-07 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature dv/dt rated VDS 30 V RDS on 7.3 m ID 50 A P-TO-252-3-11 Type Package Ordering Code Marking SPD50N03S2-07 P-TO-252-3-11 Q67040-S4430
|
Original
|
SPD50N03S2-07
P-TO-252-3-11
P-TO-252-3-11
Q67040-S4430
PN0307
BSPD50N03S2-07,
SPD50N03S2-07
pn0307
BSPD50N03S2-07
|
PDF
|