ZC0204
Abstract: K1510 SMD MARKING CODE 221k smd marking ZC vitrohm resistors Marking Code SMD zc ZG0207 SMD ZC SMD MARKING CODE 24 Vitrohm
Text: VITROHM Series ZC SMD - Metal Film resistors MELF Style Specifications Type ZC0204 ZC0207 Style 0204 0207 0,25 0,4W for min. 8.000hrs 1,0 Nominal Power rating P70 W Resistance range Ω see next page E-series see next page Tolerance % Temperature coefficient
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ZC0204
ZC0207
000hrs)
ZC0204
K1510
SMD MARKING CODE 221k
smd marking ZC
vitrohm resistors
Marking Code SMD zc
ZG0207
SMD ZC
SMD MARKING CODE 24
Vitrohm
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T2D14
Abstract: vitrohm resistors Marking Code SMD zc K1510 ZC0207 zc smd ZC0204 smd marking ZC .zc smd SMD MARKING CODE 221k
Text: VITROHM Series ZC SMD - Metal Film resistors MELF Style Specifications Type ZC0204 ZC0207 Style 0204 0207 0,25 0,4W for min. 8.000hrs 1,0 Nominal Power rating P70 W Resistance range Ω see next page E-series see next page Tolerance Temperature coefficient
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1000h
ZC0204
000hrs)
ZC0207
T2D14
vitrohm resistors
Marking Code SMD zc
K1510
ZC0207
zc smd
smd marking ZC
.zc smd
SMD MARKING CODE 221k
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Vitrohm
Abstract: vitrohm resistors ZC0204 vitrohm 214
Text: VITROHM Series ZC SMD - Metal Film resistors MELF Style Specifications Type ZC0204 ZC0207 Style 0204 0207 0,25 0,4W for min. 8.000hrs 1,0 Nominal Power rating P70 W Resistance range Ω see next page E-series see next page Tolerance Temperature coefficient
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ZC0204
ZC0207
000hrs)
Vitrohm
vitrohm resistors
ZC0204
vitrohm 214
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FY632
Abstract: FW625
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18D MT28C128564W18D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
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128Mb
32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
FY632
FW625
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
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128Mb
32Mb/64Mb
MT28C128532W18/W30D
MT28C128564W18/W30D
77-Ball
09005aef80b10a55
MT28C128564W18D
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FW643
Abstract: FX639 FX649 FY631 FY627 w18 SMD smd transistor w18 w18 smd transistor FY651 FW649
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
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128Mb
32Mb/64Mb
MT28C128532W18/W30D
MT28C128564W18/W30D
77-Ball
09005aef80b10a55
MT28C128564W18D
FW643
FX639
FX649
FY631
FY627
w18 SMD
smd transistor w18
w18 smd transistor
FY651
FW649
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TQX6273
Abstract: simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227
Text: SIEMENS ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC54 and FALC-LH PEB 2254 PEB 2255 Crystal recommendation Application Note 12.97 PEB 2255 Revision History : Previous Version : None Page Page Current Version : 12.97
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FALC54
254-A
TQX6273
simpson 464
Tele Quartz Group 16.384 MHz
Tele Quarz Group Crystal Oscillator
HC-49 crystal
Tele Quarz Group 16.384
CT 9254
Telcona
N1086
30227
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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SR52
Abstract: FY618 SR-52
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SR52
FY618
SR-52
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MT28F1284W18
Abstract: smd codes marking A21 FY618
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for fast PROGRAM
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
smd codes marking A21
FY618
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FY618
Abstract: FY617
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
FY618
FY617
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SMD MARKING CODE AADV
Abstract: marking SR5 SMD MT28F1284W18 AADV
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SMD MARKING CODE AADV
marking SR5 SMD
AADV
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smd transistor bq
Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
smd transistor bq
A22 SMD CODE
SMD MARKING g3
transistor smd marking BA RE
FY616
A22 SMD MARKING CODE
AG qd SMD
smd code book 6e
smd marking g8
TRS.150
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ST72262G2
Abstract: smd transistor marking sp1 TRANSISTOR SMD MARKING CODE 2301 SDIP32 ST72260G ST72260G1 ST72262G ST72262G1 FR MARKING SMD TRANSISTOR ST72264G1
Text: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at
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ST72260G,
ST72262G,
ST72264G
16-BIT
ST72262G2
smd transistor marking sp1
TRANSISTOR SMD MARKING CODE 2301
SDIP32
ST72260G
ST72260G1
ST72262G
ST72262G1
FR MARKING SMD TRANSISTOR
ST72264G1
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L18 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
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MT28F1284L18
80-Ball
16-bit)
09005aef81002765
MT28F1284L18
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class d Sinus inverter circuit diagram schematics
Abstract: ST72262G2 marking code g2b SMD smd g2b smd TRANSISTOR code marking 8K SDIP32 ST72260G ST72260G1 ST72262G ST72262G1
Text: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at
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ST72260G,
ST72262G,
ST72264G
16-BIT
class d Sinus inverter circuit diagram schematics
ST72262G2
marking code g2b SMD
smd g2b
smd TRANSISTOR code marking 8K
SDIP32
ST72260G
ST72260G1
ST72262G
ST72262G1
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
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MT28F1284L30
80-Ball
16-bit)
09005aef8115e8b3
MT28F1284L30
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FW863
Abstract: FX861 smd marking H6
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
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16-bit)
09005aef8115e8b3
MT28F1284L30
FW863
FX861
smd marking H6
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FY849
Abstract: FW843 FW842 FW84 FY848 SR-52
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L18 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
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16-bit)
09005aef81002765
MT28F1284L18
FY849
FW843
FW842
FW84
FY848
SR-52
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Untitled
Abstract: No abstract text available
Text: ST7LITE20F2 ST7LITE25F2 ST7LITE29F2 8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, Timers, SPI Datasheet - production data Features • Memories – 8 Kbytes single voltage Flash Program memory with Read-out protection – In-circuit programming and in-application
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ST7LITE20F2
ST7LITE25F2
ST7LITE29F2
DIP20
DocID8349
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TRANSISTOR SMD MARKING CODE ALG
Abstract: ATMEL 118 93C66A smd transistors code alg ALG SMD MARKING CODEs transistor smd marking ALG 1ff TRANSISTOR SMD MARKING CODE transistor SMD marked RNW atmel 93c66A SMD MARKING CODE ALg Agilent 3070 Tester
Text: MAX II Device Handbook Preliminary Information 101 Innovation Drive San Jose, CA 95134 408 544-7000 http://www.altera.com MII5V1-1.0 Copyright 2004 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and
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ICF CP 1005
Abstract: smd transistor marking sp1 AN1324 HE10 SO20 ST7L15 ST7L19 CSTCE16M0V51Z
Text: ST7L15, ST7L19 8-bit MCU for automotive with single voltage Flash/ROM memory, data EEPROM, ADC, 5 timers, SPI PRELIMINARY DATA Features • ■ ■ ■ Memories – 4 Kbytes single voltage extended Flash XFlash or ROM with readout protection, InCircuit programming and In-Application Programming (ICP and IAP), 10K write/erase cycles guaranteed, data retention 20 years at
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ST7L15,
ST7L19
ICF CP 1005
smd transistor marking sp1
AN1324
HE10
SO20
ST7L15
ST7L19
CSTCE16M0V51Z
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AN1045
Abstract: AN1324 AN970 HE10 SO20 ST7L15 ST7L19 024 smd diode on semi SMD MARKING CODE A5
Text: ST7L15 ST7L19 8-bit MCU for automotive with single voltage Flash/ROM memory, data EEPROM, ADC, 5 timers, SPI Features • ■ ■ Memories – 4 Kbytes program memory: Single voltage extended Flash XFlash or ROM with readout protection capability. In-application
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ST7L15
ST7L19
300mil
10-bit
AN1045
AN1324
AN970
HE10
SO20
ST7L15
ST7L19
024 smd diode on semi
SMD MARKING CODE A5
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TRANSISTOR SMD MARKING CODE DM
Abstract: smd transistor x8 CSBFB1M00J58 TRANSISTOR SMD MARKING CODE 352 AN1324 HE10 SO20 ST7L15 STMICROELECTRONICS ATIC ICF CP 1005
Text: ST7L1 8-BIT MCU FOR AUTOMOTIVE WITH SINGLE VOLTAGE FLASH/ROM MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI PRELIMINARY DATA • ■ ■ ■ Memories – 4 Kbytes single voltage extended Flash XFlash or ROM with read-out protection, InCircuit programming and In-Application Programming (ICP and IAP), 10K write/erase cycles guaranteed, data retention 20 years at
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