jd 1801
Abstract: 3H103 Z68C d3s9
Text: 9NIMVHQ 00 I Jo I ; I I A3 a O N I M V U d 31V 3S 133HS o i ON £>N I wvdd y 1S3a 3CIOO 3 9 VO H S IN I 3 1H9I3M S319NV Did fr 03d S NO I I V O I I d dV 3Z I £ 1026 1-801 33dS N O I S d 3 A H S i l U d 3 Q V 3 H Q d V O aAdv !M 'd d IA IV !M 'd ÇIJJÔ
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OCR Scan
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133HS
S319NV
SS31NI1
0NVH31O1
SaNVld3H13N
H0S09N3901d3H-s.
QNV1d303N
S31NOdlD313
1S31d
19V1N09
jd 1801
3H103
Z68C
d3s9
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PDF
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136b3
Abstract: B2321
Text: f u PERICOM AADVANCE D V A N C E INFORMATION 1NJ V PI5C16214 PI5C162214 2 5 0 i mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi il mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi i 3-to-l Bus-Select Switch Product Features:
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OCR Scan
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PI5C16214
PI5C162214
PI5C162214
12-bit
136b3
B2321
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PDF
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C104A
Abstract: No abstract text available
Text: f u PERICOM AADVANCE D V A N C E INFORMATION 1NJ V PI5C16209 PI5C162209 25ft I ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill II ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill I
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OCR Scan
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PI5C16209
PI5C162209
18-Bit
PI5C162209
PS7022A
C104A
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PDF
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89x0
Abstract: 099Z
Text: o o o z u v m c A3d s o s t d m 3 A3d 133HS O N iM v y a 31V0S 099£ZZ' 6 Z .Z .0 0 a ^ H o i s n o 1H0I3M L V H S IN IJ STO NV Ol d V old e Ol d 2 Ol d L Ol d 0 =F 01 0 31 0 l dl S3 d on ONiMvaa 3 00 0 39V0 3ZIS e ro =F =f f ‘l V 0 l i y 3 A h u m ‘1 V N 3 I S
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OCR Scan
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133HS
31V0S
ld31V
SS31ND
S30NVd3101
X30V3dnS
10V1N00
Q3SV313id
89x0
099Z
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PDF
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Untitled
Abstract: No abstract text available
Text: ooozavmc A3a sost dm za A3U JO L:8 133HS ONiMVda y^oisno 31V3S 61100 UU91S< 0 1 Q 3 1 0 ld lS 3 d on 0NiMvya 3QOO 30V3 LV tO O Ll - f l l 3 Z IS 03dS yoioi^ {a33V^0Vd 3dVl 13^00d ‘sav31 3NIM lino ‘I0[t9'0]^0' ‘ivony^A ‘Aiamssv 3i0vid303y U 0 l| D J 0 d j0 3
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OCR Scan
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133HS
31V3S
UU91S<
sav31
3i0vid303y
S310NV
Vld31VkN
SN0ISN31A|
03Kl3
31MAR2000
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PDF
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962n
Abstract: No abstract text available
Text: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns
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Original
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09005aef80ec6f63
pdf/09005aef80ec6f46
962n
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PDF
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cr1 5 p26z
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ
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Original
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
cr1 5 p26z
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PDF
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Untitled
Abstract: No abstract text available
Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W2MW16BGB
16-word
09005aef82832fa2
09005aef82832f5f
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PDF
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BCR100
Abstract: No abstract text available
Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:
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Original
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128Mb/64Mb
09005aef81d721fb
pdf/09005aef81d72262
BCR100
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PDF
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SR52
Abstract: FY618 SR-52
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SR52
FY618
SR-52
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PDF
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Transistor TT 2246
Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23
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Original
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3/SOT-23
6/SOT-23
10/uMAX
3/SC-70
Transistor TT 2246
TT 2206 datasheet
apm 4906
TT 2206
transistor tt 2206
tt 2246
bt 7377
SOT-23 AAAA
bc 5478
AAXZ
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PDF
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jd 1801 data sheet
Abstract: AAAM SOT23-6 ABAA sot23 SOT23-6 JD 1801 fm 4213 ic AAHB LM 1117 bs33 SOT23-6 AAFQ
Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − August 31, 2003 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A IM3−2.1 FZEF SOT23−3 MAX 809L UR AA SOT23−3 LM
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Original
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OT23-3
SC70-5
SC70-4
SC70-3
SC70-3143
jd 1801 data sheet
AAAM SOT23-6
ABAA sot23
SOT23-6
JD 1801
fm 4213 ic
AAHB
LM 1117
bs33
SOT23-6 AAFQ
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PDF
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FY541
Abstract: micron flash controller MT28F322D15FH-104BET
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D15FH Super Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice
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Original
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MT28F322D15FH
58-Ball
100ns
MT28F322D15FH
FY541
micron flash controller
MT28F322D15FH-104BET
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PDF
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MS-026D
Abstract: as5sp128k32dq
Text: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable
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Original
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AS5SP128K36
MS-026D
as5sp128k32dq
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PDF
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Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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Original
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S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
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PDF
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h11m
Abstract: No abstract text available
Text: poiuiup0/£¿6ot7dwo/eujoi|/ a 01 L u A3d d-in O L u 133H5 L°0 ¿6^ L ' 9 N I M V d O 33V0S ON 0 3 1 0 ItíiS3d 6¿¿00 9N]HVaa 3000 39V0 d 3 N 0 1 b n 0 LV 1H9I3M 3ZI5 03dS S N O U I S O d 8 + ^6 'U 3d A l ' l i d SS3dd ^Qdvoodnd ' A o a N a s s v d i o v i d d ü d d
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OCR Scan
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66-ddV-90
133H5
33V0S
5313N
d3H10
SS30NO
530NVd3001
S09t7
d030313--
Noiidiao53a
h11m
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PDF
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FX109
Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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MT28F644W18
MT28F644W30
56-Ball
16-bit)
09005aef8098d2b5
MT28F644W30
FX109
FY108
"NOR Flash" intel 28f
MT28F644W18
FY113
FX113
FW117
fw12
FW118
FY114
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PDF
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Untitled
Abstract: No abstract text available
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG
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Original
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S71WS-N
S71WS-N
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PDF
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Untitled
Abstract: No abstract text available
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG
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Original
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S71WS-N
S71WS-N
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PDF
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S71WS512ND0BFWEP
Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics
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Original
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
S71WS512ND0BFWEP
LZ 48H 526
71WS512ND0BFWEP
BAX55
S71WS512
71WS512ND
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PDF
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Untitled
Abstract: No abstract text available
Text: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.7–3.3V VCCQ1
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Original
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MT45W4MW16BCGB
16-word
09005aef8247bd51/Source:
09005aef8247bd83
133mhz_
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PDF
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D5138
Abstract: No abstract text available
Text: 80 / O S 08 t n L JO L A3y 133HS L :Í7 ONiMVda y^oisno 31V0S 6¿¿00 L V 01 Q 310ldlS3d 0NiMvya on 3QOO 33V0 Z7V T 1H0I3M 3 Z IS “ CL' “ - Ü3dS N O llVOnddV LULU^ 33ds lo n ao yd ‘gj UJUJ^ ^0Vd-Z ‘3inaon 1VN0 IS ‘AISIAGSSV Nld 3IWN S3!UOJ]98|3
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OCR Scan
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PDF
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X006
Abstract: RK 732 - 228
Text: U / 0 S08t Z JO L L :8 133HS ONiMVda y^^oisno 31V 0 S LV 6 Z .Z .0 0 01 Q310ldlS3d on 0NiMvya 3QO O tO O Ll - f l l 3 Z IS 30VO - 3 3 f L — 8 0 T [£l/0]Q 00’ 03dS NOLLVOIlddV yoioi^ ‘a^ov^ovd 3dvi i3^ood ‘sav3i 3NIM lin o ‘10 O 9‘0]SZ0’ ‘IVOIlfcGA
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OCR Scan
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23JUN00
X006
RK 732 - 228
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PDF
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Untitled
Abstract: No abstract text available
Text: ooozavm c A3& H A3 H JO 133HS O N iM v y a 31 VOS 6 1 1 0 0 Z 0 0 £ Z Z ~ O 0 1 a 3 io iu is 3 H ON 3NIMVUQ 3000 33V0 d B w o is n o LV ±H3I3M 3ZIS 03 dS NOIlVOIIddV 8 0 9 C -S 0 L Z L UOI^DJOdjOQ Dd S 0 IU 0 jp 9 |3 d ja w n N Id V d NSOd n v N o is J O ON
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OCR Scan
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133HS
L-Z00Â
0-Z00Â
3iiH03va
10V1N00
10V1N00
13lAiAnod
C13AU3S3U
Q3SV313y
03JOZ
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PDF
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