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    MARKING CODE INFINEON TO252 Search Results

    MARKING CODE INFINEON TO252 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    74LVCH16501APF8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation

    MARKING CODE INFINEON TO252 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    50p03l

    Abstract: DIN 6880 P-TO252 P-TO252-5 marking D50 SPD50P03L P-TO252-5-3
    Text: SPD50P03L OptiMOS -P Small-Signal-Transistor Product Summary Features V DS • P-Channel -30 R DS on ,max • Enhancement mode 7 ID V mΩ -50 A • Logic level • 175°C operating temperature • Avalanche rated P-TO252-5-3 P-DSO-8 • dv /dt rated • High current rating


    Original     		SPD50P03L P-TO252-5-3 Q67042-S4076 50P03L PG-TO252-5-3 SP000086729 50P03L DIN 6880 P-TO252 P-TO252-5 marking D50 SPD50P03L P-TO252-5-3 PDF

    Q67040-S4381

    Abstract: No abstract text available
    Text: IDD23E60 Preliminary data Fast Switching EmConDiode Product Summary Feature 600 V IF 23 A VF 1.45 V Tjmax 175 °C VRRM 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO252-3-1. Low forward voltage 175°C operating temperature


    Original     		IDD23E60 P-TO252-3-1. Q67040-S4381 D23E60 Q67040-S4381 PDF

    D15E60

    Abstract: IDD15E60 J-STD-020A P-TO252 Q67040-S4380 01642
    Text: IDD15E60 Preliminary data Fast Switching EmConDiode Product Summary Feature 600 V IF 15 A VF 1.45 V Tjmax 175 °C VRRM 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO252-3-1. Low forward voltage 175°C operating temperature


    Original     		IDD15E60 P-TO252-3-1. Q67040-S4380 D15E60 D15E60 IDD15E60 J-STD-020A P-TO252 Q67040-S4380 01642 PDF

    D06E60

    Abstract: idd06e60 6A MARKING 01642 400v 3a low vf diode CTC30
    Text: IDD06E60 Preliminary data Fast Switching EmConDiode Product Summary Feature 600 V IF 6 A VF 1.45 V Tjmax 175 °C VRRM 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO252-3-1. Low forward voltage 175°C operating temperature


    Original     		IDD06E60 P-TO252-3-1. Q67040-S4378 D06E60 D06E60 idd06e60 6A MARKING 01642 400v 3a low vf diode CTC30 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPU06N80C2 SPD06N80C2 Target data sheet Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Worldwide best R DS on in TO251 and TO252 · Ultra low gate charge · Periodic avalanche rated


    Original     		SPU06N80C2 SPD06N80C2 P-TO252 P-TO251-3-1 P-TO251-3-1 PDF

    fast recovery diode 400v 5A

    Abstract: IDD09E60
    Text: IDD09E60 Preliminary data Fast Switching EmConDiode Product Summary Feature 600 V IF 9 A VF 1.45 V Tjmax 175 °C VRRM 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO252-3-1. Low forward voltage 175°C operating temperature


    Original     		IDD09E60 P-TO252-3-1. Q67040-S4379 D09E60 fast recovery diode 400v 5A IDD09E60 PDF

    400v 3a low vf diode

    Abstract: DIODE SMD 350A diode fast recovery 400V 3A fast recovery diode 400v 5A
    Text: IDD03E60 Preliminary data Fast Switching EmConDiode Product Summary Feature 600 V IF 3 A VF 1.45 V Tjmax 175 °C VRRM 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO252-3-1. Low forward voltage 175°C operating temperature


    Original     		IDD03E60 P-TO252-3-1. Q67040-S4377 D03E60 400v 3a low vf diode DIODE SMD 350A diode fast recovery 400V 3A fast recovery diode 400v 5A PDF

    Untitled

    Abstract: No abstract text available
    Text: IDD09E60 Fast Switching Emitter Controlled Diode Product Summary VRRM Feature 600 V IF 9 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge PG-TO252-3 • Low forward voltage


    Original     		IDD09E60 PG-TO252-3 D09E60 PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J PDF

    2n0680

    Abstract: SPD14N06S2-80 BSPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 80 mΩ ID 17 A • 175°C operating temperature • Avalanche rated P- TO252 -3-11 • dv/dt rated Type SPD14N06S2-80 Package Ordering Code


    Original     		SPD14N06S2-80 Q67060-S7423 2N0680 BSPD14N06S2-80, SPD14N06S2-80 2n0680 BSPD14N06S2-80 PDF

    02N60

    Abstract: SPD02N60S5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5 PDF

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 VGS-75
    Text: SPD25N06S2-40 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 25 A P-TO252-3-1 Type Package Ordering Code Marking SPD25N06S2-40


    Original     		SPD25N06S2-40 P-TO252-3-1 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 VGS-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPU01N60C3 SPD01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 Q67040-S4188 PDF

    11n10

    Abstract: smd diode marking 78A TRANSISTOR SMD MARKING CODE SPD11N10 SPU11N10
    Text: SPD11N10 SPU11N10 Preliminary data SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS 100 V • Enhancement mode RDS on 170 mΩ • 175°C operating temperature ID 10.5 A • Avalanche rated P- TO251 -3-1 P- TO252 -3-11 • dv/dt rated


    Original     		SPD11N10 SPU11N10 Q67042-S4121 11N10 Q67042-S4122 11n10 smd diode marking 78A TRANSISTOR SMD MARKING CODE SPD11N10 SPU11N10 PDF

    SPD35N10

    Abstract: 35n10 P-TO252 Q67042-S4125
    Text: SPD35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature V R DS on 44 m ID 35 A  Avalanche rated P-TO252  dv/dt rated Type SPD35N10 Package P-TO252 Ordering Code


    Original     		SPD35N10 P-TO252 Q67042-S4125 35N10 SPD35N10 35n10 P-TO252 Q67042-S4125 PDF

    2n0680

    Abstract: BSPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 80 m ID 17 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423


    Original     		SPD14N06S2-80 SPD14N06S2-80 Q67060-S7423 2N0680 200Aay BSPD14N06S2-80, 2n0680 BSPD14N06S2-80 PDF

    2n0680

    Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423


    Original     		SPD14N06S2-80 Q67060-S7423 2N0680 BSPD14N06S2-80, SPD14N06S2-80 2n0680 g39 SMD BSPD14N06S2-80 PDF

    02n60s5

    Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42 PDF

    SPD02N60S5

    Abstract: SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		SPU02N60S5 SPD02N60S5 PG-TO252. PG-TO251. SPD02N60S5 Q67040-S4226 Q67040-S4213 PDF

    2N0640

    Abstract: MAX408
    Text: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 40 m ID 29 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427


    Original     		SPD25N06S2-40 SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, 2N0640 MAX408 PDF

    PN06L13

    Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
    Text: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 ANPS071E BSPD50N06S2L-13 PDF

    09N03L

    Abstract: 09N03 IPD09N03L P-TO252 Q67042-S4110
    Text: IPD09N03L Preliminary data OptiMOS=Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 8.9 m ID 30 A P-TO252 Superior thermal resistance 175°C operating temperature


    Original     		IPD09N03L P-TO252 Q67042-S4110 09N03L 09N03L 09N03 IPD09N03L P-TO252 Q67042-S4110 PDF

    2n06l35

    Abstract: transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252 SPD26N06S2L-35
    Text: SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 35 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD26N06S2L-35


    Original     		SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2n06l35 transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252 PDF

    14N03L

    Abstract: IPD14N03L P-TO252 14N03
    Text: IPD14N03L Preliminary data OptiMOS=Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m 13.5 30 A P-TO252 Superior thermal resistance 175°C operating temperature


    Original     		IPD14N03L P-TO252 Q67042-S4111 14N03L 14N03L IPD14N03L P-TO252 14N03 PDF