MARKING CODE FS 1 SOT 223 Search Results

Contextual Info: BSP615S2L OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 RDS on 90 m ID 2.8 A V SOT 223 • Green Product (RoHS Compliant) • AEC Qualified Type Package Ordering Code Marking BSP615S2L SOT 223 On Request

2N603L

Abstract: Q67060-S7213 BSP603S2L
Contextual Info: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 33 mΩ ID 5.2 A SOT 223 Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified

2N615L

Abstract: Q67060-S7211 BSP615S2L
Contextual Info: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified

2N615L

Abstract: 55B5 BSP615S2L 2N615
Contextual Info: BSP615S2L OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified

2N603L

Abstract: Q67060-S7213 BSP603S2L d52a
Contextual Info: BSP603S2L OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m
ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Contextual Info: SPN04N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in SOT 223 · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity Type 4 3 G,1

720 TRANSISTOR smd sot-223

Abstract: SPN04N60S5
Contextual Info: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances

SPN04N60S5

Abstract: transistor smd marking ds sot-223 04n60s5 VPS05163
Contextual Info: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances

720 TRANSISTOR smd sot-223

Abstract: SPN04N60S5
Contextual Info: SPN04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A • Ultra low gate charge SOT-223 • Extreme dv/dt rated 4 • Ultra low effective capacitances

04n60c2

Abstract: Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60
Contextual Info: SPN04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in SOT 223 VDS 600 V • Ultra low gate charge RDS(on) 0.95 Ω • Extreme dv/dt rated ID 0.8 A • Ultra low effective capacitances

SPN04N60S5

Abstract: SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223
Contextual Info: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances

s4308

Abstract: d065a 04n60c2 SPN04N60C2 GPS05560 VPS05163 04N60C 380v Q67040-S4308
Contextual Info: Preliminary data SPN04N60C2 Cool MOS Small-Signal-Transistor COOLMOS Power Semiconductors Feature • Product Summary New revolutionary high voltage technology · Worldwide best RDS on in SOT 223 VDS 600 V · Ultra low gate charge R DS(on) 0.95 W · Extreme dv/dt rated

Contextual Info: SIEMENS CGY94 GaAs MMIC • • • • • • Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V 2 W output power at 3.6 V Overall power added efficiency 46 % Input matched to 50 ohms, simple output match

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

MMIC marking code S2

Abstract: SIEMENS MMIC powaramp ta CGY94 Q68000-A9124 CGY so SMD F09
Contextual Info: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for G SM or A M PS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V ' 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 £î, simple output match

BC237

Abstract: motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N–Channel 2 SOURCE 3 GATE 3 1 DRAIN MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage

WT transistor

Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc

2N5640 equivalent

Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C

Contextual Info: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,

motorola JFET 2N3819

Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc

BC237

Abstract: S11S C4 SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc

bf244

Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage

On semiconductor date Code mpf4393

Abstract: replacement for 2n2905 motorola JFET 2N3819 BF245 application note BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching MPF4392 MPF4393 1 DRAIN N–Channel — Depletion 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 30 Vdc Drain – Gate Voltage VDG 30 Vdc