MARKING CODE FET Search Results

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

AT91SAM3U4E

Abstract: SAM3U SUPC_SR Atmel SAM-ICE AT91SAM3U4 SAM3u ADC12B atmel Lot Code Identification atmel 1232 Atmel MARKING CODE
Contextual Info: Errata on SAM3U Engineering Sample Devices 1. Scope This document describes the known errata found on the SAM3U series engineering samples. 1.1 Marking All devices are marked with the Atmel logo and the ordering code. Additional marking is as follows: YYWW

ADC12B

Abstract: atmel 1224 AT91SAM3U4C AT91SAM3U4 SAM3u AT91SAM3U4E Atmel MARKING CODE AT91SAM3U1C ATMEL 1212 AT91SAM3U2E
Contextual Info: Errata on SAM3U Engineering Sample Devices 1. Scope This document describes the known errata found on the SAM3U series engineering samples. 1.1 Marking All devices are marked with the Atmel logo and the ordering code. Additional marking is as follows: YYWW

1N4148WT

Abstract: 1N4448WT marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change
Contextual Info: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height

GaAs FET cfy 14

Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration

qs marking sot-89

Abstract: QS 100 NPN Transistor FJC1308 FJC1963 SOT89 MARKING CODE B2 fairchild marking code
Contextual Info: FJC1963 NPN Epitaxial Silicon Transistor Features • • • • Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation Voltage Marking 1 1 9 6 3 P Y W W SOT-89 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

DSKTJ05

Abstract: transistor code book FET MARKING CODE
Contextual Info: DSKTJ05 Tentative Total pages page DSKTJ05 Silicon N-channel junction FET For AF impedance converter Marking Symbol : 9S, 9T Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)

marking AGs sot-23

Contextual Info: LNE150 &à Supertex inc. Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N BVoos (max) 500V 1.0KQ Order Number / Package If BVDSS/ Product marking forTO-236AB: TO-236AB* Die NEE* LNE150K1 LNE150ND where * = 2-week alpha date code

CFY 10

Abstract: gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106
Contextual Info: GaAs FET ● ● ● ● ● CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration

cfy 19 siemens

Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Contextual Info: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

GaAs FET cfy 19

Abstract: S11 SIEMENS z0 607 MA 7a
Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20

marking code dn5c

Abstract: dn5c DN3525 DN3525N8 DN3525NW
Contextual Info: DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C❋ Where ❋ = 2-week alpha date code

dn5c

Abstract: marking code dn5c
Contextual Info: DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C❋ Where ❋ = 2-week alpha date code

bf544

Abstract: siemens fet to92 700M
Contextual Info: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

fl6l5201

Contextual Info: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F

DN3525NW

Abstract: marking code dn5c dn5c DN3525 DN3525N8
Contextual Info: DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C❋ Where ❋ = 2-week alpha date code

SOT-23 Marking code MU

Abstract: AS SOT-23 F 5 Ld SOT-23 N1T SOT23
Contextual Info: TN2130 Low Threshold Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVoss / Order Number / Package Product marking for SOT-23: RdS<ON max) ^GS(th) BVoos (max) TO-236AB* N1T* 300V 25Q 2.4V TN2130K1 where * = 2-week alpha date code

supertex dmos

Contextual Info: Supertexinc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N Order Number / Package ' d (ON) BVDOs (max) (min) TO-236AB* 500V 1.0K£1 3.0mA LNE150K1 Product marking for TO-236AB: Die NEE* LNE150ND where * = 2-week alpha date code

Contextual Info: DN3525 DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C* Where *= 2-week alpha date code

CFY10

Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
Contextual Info: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel