MARKING CODE DIODE R112 Search Results

IEC 60947-4-1 for ABB

Abstract: ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode
Contextual Info: Main Catalogue Low Consumption d.c. Operated Contactors AL Contactors NL Contactor Relays 80 1SBC141135C0301 ABB Entrelec AL 9 . AL 40 Contactors NL. Contactor Relays d.c. Operated Contents Ordering details 3-pole Contactors – AL. screw and spring terminals . 5

UMT6 SC-88

Abstract: SOT-363 marking ROHM 23marking Transistor code iz sot363
Contextual Info: Data Sheet POWER SUPPLY MONITOR DEVICES EML22/UML23N Dimensions Unit : mm Features 1) Packaging Zener diode and small-signal amplifier transistor EMT6 2) Using outside connection able to use Power supply monitor device 3) When use Power supply monitor device,

zd107

Abstract: zd107 transistor IPB60R199 88EM8041 90w flyback GBL406 LTV817B t101a zener diode cross reference ZD104
Contextual Info: Cover 88EM8040/88EM8041 Power Factor Correction Controller for Flyback Topology Datasheet Customer Use Only Doc. No. MV-S104983-01, Rev. A October 5, 2009 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8040/88EM8041 Datasheet Document Conventions

DSC 10D-11

Abstract: pbs406gu PBS406G ct 5d-11 NTC 5D-11 electrolytic capacitor C109 C110 1000uf FAN7554 dsc 5d-11 marking code diode R112 9V 1A smps
Contextual Info: www.fairchildsemi.com FAN7554 Versatile PWM Controller Features Description • • • • • • • • • • • • • • • The FAN7554 is a fixed frequency current mode PWM controller. It is specially designed for off-line and DC to DC converter applications with minimal external components.

CAL 5-11 ABB

Abstract: 1SBC100122C0201 star delta wiring diagram with pneumatic timer star delta timer starter diagram tp 40 da star delta timer starter diagram diode LT 42 PR 3002 WB75-A ABB CONTACTOR EH 160 ABB CONTACTOR EH 370 ABB CONTACTOR EH 250
Contextual Info: 4/0 Accessories for Contactors and Contactor Relays Contents Accessories for A. Series and BC. Series Contactors and for Contactor Relays Auxiliary Contact Blocks - Front Mounting .

RE1L002SN

Contextual Info: RE1L002SN Datasheet Nch 60V 250mA Small Signal MOSFET lOutline VDSS 60V RDS on (Max.) 2.4W ID 250mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(2.5V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: ZDX130N50 Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID -13A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: ZDX080N50 Nch 500V 8A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: ZDX080N50 Datasheet Nch 500V 8A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

TO220FM-3

Contextual Info: ZDX050N50 Datasheet Nch 500V 5A Power MOSFET lOutline VDSS 500V RDS on (Max.) 1.5W ID 5A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

ZDX130

Contextual Info: ZDX130N50 Nch 500V 13A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID -13A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: ZDX050N50 Nch 500V 5A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 1.5W ID 5A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: RE1L002SN Nch 60V 250mA Small Signal MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 2.4W ID 250mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(2.5V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

preset variable resister 10k ohm

Abstract: 65asf transistor 8050d W83782D history of old speech control circuitry marking v6 zener diode 2N3904 W55FXX W83791D AH A01
Contextual Info: W83791D Winbond H/W Monitoring IC W83791D W83791D DataSheet Revision History Pages Dates 1 n.a. 2 n.a. 01/Jan 3 P.7 P.34 4 P.43/44 5 Version Version on Web n.a. All version before 0.5 are for internal use. 0.5 n.a. First publication. 01/Jan 0.51 n.a. 1 Revise SLOTOCC# pin description.

Contextual Info: ZDX080N50 Nch 500V 8A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: ZDX130N50 Nch 500V 13A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID -13A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

sch2080

Abstract: SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM
Contextual Info: SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed

sct2080ke

Abstract: SCT2080 sct2080k MOSFET 1200V ROHM Solar Charge Controller driver circuits A1412
Contextual Info: SCT2080KE SCT2080KE N-channel SiC power MOSFET Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain

Diode marking CODE R1j

Abstract: Diode marking CODE R1K Diode marking CODE R1M R1M 29 CD214A-R150 R1100 R1200 R1600
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lead free as standard RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R11600 Glass Passivated Rectifiers General Information

Contextual Info: Medium Power Transistor Motor, Relay drive (6010V, 2A) 2SD2143 1.5 (2) 5.1 2.3 (1) 5.5 6.5 0.75  Dimensions (Unit : mm) 0.9 Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads.

Diode marking CODE R1K

Abstract: Diode marking CODE R1j 4 8 Diode marking CODE R1j
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R12000 Glass Passivated Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

SiC POWER MOSFET

Contextual Info: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

sch2080

Abstract: SCH2080KE
Contextual Info: SCH2080KE SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

Contextual Info: Medium Power Transistor Motor, Relay drive (6010V, 2A) 2SD2143 1.5 5.1 (2) 6.5 0.9 5.5 2.3 (1) 0.75  Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads.