MARKING CODE CB SOT23 Search Results

marking code CB sot23

Abstract: voltage divider 100k SOT23 MARKING 50k 50K MARKING SOT23
Contextual Info: MODEL SS103VD Voltage divider circuit Thin film resistor network RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Passivation coating provides protection in humid environments Industry Standard Packaging 3 lead SOT23 Ratio Tolerances

egs SOT23

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

bcw66

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B

Contextual Info: • bbS3T31 DD3Sfi62 AbO H A P X N AUER PHILIPS/DISCRETE PMBT5551 b7E 1> ;v SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 envelope. QUICK REFERENCE DATA

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

marking code CB sot23

Abstract: 0345K MIL-R-83401 SS103
Contextual Info: SS103 SERIES Thin Film Resistor Network Voltage Divider Circuit RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Industry Standard Packaging 3 lead SOT23 Ratio Tolerances < ±0.05% TCR Tracking Tolerances < ±5 ppm/°C ELECTRICAL1

ss103

Contextual Info: SS103 SERIES Thin Film Resistor Network Voltage Divider Circuit RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Industry Standard Packaging 3 lead SOT23 Ratio Tolerances < ±0.05% TCR Tracking Tolerances < ±5 ppm/°C ELECTRICAL1

YL2 sot23

Abstract: bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ, 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.

POLAR0.8

Abstract: Marking code mps RB400
Contextual Info: WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reversethat leakage

marking 2u

Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
Contextual Info: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage

MBTA42

Abstract: 12p sot-23
Contextual Info: WILLAS FM120-M+ THRU MMBTA4xLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

SOT23-5 pwm generator

Abstract: AP1624 FDS6612 SS240 345KHZ
Contextual Info: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller „ Features „ General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz（±15%） - Stand-by Current: ISTB=3µA.（Typ.） - Pb-Free Package: SOT23-5

SOT23-5 pwm generator

Abstract: PFM SOT23 SS240 marking code 10 sot23 marking code ce SOT23 PWM 003 AP1624 FDS6612 AF230
Contextual Info: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller „ Features „ General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz（±15%） - Stand-by Current: ISTB=3µA.（Typ.） - Pb-Free Package: SOT23-5

MBT2222 equivalent

Abstract: MARKING M1B
Contextual Info: WILLAS FM120-M+ THRU MMBT2222 A LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features NPN •Silicon Batch process design, excellent power dissipation offers

MBTA92

Contextual Info: WILLAS FM120-M+ THRU MMBTA9xLT1 FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V HighMOUNT Voltage Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

IMBT4401

Contextual Info: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A

Contextual Info: SMBTA14/ MMBTA14 NPN Silicon Darlington Transistor • High DC current gain • High collector current 2 3 • Low collector-emitter saturation voltage Type SMBTA14/ MMBTA14 Marking s1N 1 Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter

Contextual Info: SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary types: 1 SMBTA92 / MMBTA92 PNP Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E Package SOT23 3=C

Contextual Info: D AC 7 512 DAC7571 www.ti.com SLAS374D – FEBRUARY 2003 – REVISED JANUARY 2014 +2.7 V to +5.5 V, I2C INTERFACE RECEIVE ONLY , VOLTAGE OUTPUT, 12-BIT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC7571 FEATURES 1 • • • • • • • 2 • •

FMMT918

Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Contextual Info: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

BSS79

Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

Contextual Info: PMBT5551 SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 package. QUICK REFERENCE DATA Collector-base voltage open emitter VCBO max. Collector-emitter voltage (open base)

sot-23 MARKING CODE G1

Abstract: C5 MARKING TRANSISTOR sot 23 marking code 2t BFS20 sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes
Contextual Info: FERRANTI semiconductors BFS20 NPN Silicon Planar VHF Transistor DESCRIPTION These devices are intended fo r IF and V H F applications w here lo w feedback capacitance is required. Encapsulated in the popular SOT-23 package these devices are designed specifically fo r use in thin and thick film