Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING CODE B2 MOSFET SOT23 Search Results

    MARKING CODE B2 MOSFET SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE B2 MOSFET SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DMN62D1SFB

    Abstract: No abstract text available
    Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V


    Original     		PDF DMN62D1SFB DS35252 DMN62D1SFB

    DMN62D1SFB

    Abstract: No abstract text available
    Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V 0.41A  Low Gate Threshold Voltage 1.6 @ VGS= 4.5V


    Original     		PDF DMN62D1SFB DS35252 DMN62D1SFB

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23


    Original     		PDF DMP21D0UFB4 AEC-Q101 DS35279

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A   0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23


    Original     		PDF DMP21D0UFB4 AEC-Q101 DS35279

    Untitled

    Abstract: No abstract text available
    Text: REV. 1.0 FS361-DS-10_EN Datasheet FS361 One Cell Lithium-ion/Polymer Battery Protection IC Mar. 2007 FS361 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742


    Original     		PDF FS361-DS-10 FS361 FS361 700REF FS361B FS361C

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • ID max TA = 25°C (Notes 4)


    Original     		PDF DMN2300UFB4 AEC-Q101 DS35269

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C


    Original     		PDF DMN2300UFB4 AEC-Q101 DS35269

    DMN62D1SFB

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications


    Original     		PDF DMN62D1SFB AEC-Q101 DS35252 DMN62D1SFB

    DFN1006H4-3

    Abstract: DMN2300UFB4 DMN2300UFB4-7B dmn2300u
    Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C


    Original     		PDF DMN2300UFB4 AEC-Q101 DS35269 DFN1006H4-3 DMN2300UFB4 DMN2300UFB4-7B dmn2300u

    Untitled

    Abstract: No abstract text available
    Text: LTC4280 Hot Swap Controller with 2 I C Compatible Monitoring FEATURES n n n n n n n n n n n n DESCRIPTION Allows Safe Insertion into Live Backplane 8-Bit ADC Monitors Current and Voltage I2C/SMBus Interface Wide Operating Voltage Range: 2.9V to 15V Adjustable Overcurrent Filter Time


    Original     		PDF LTC4280 24-Pin 10-Bit LTC4245 LTC4260 LTC4261 4280f

    FDC653N

    Abstract: LTC4280 LTC4280C LTC4280CUFD LTC4280I P6KE16A lt 4280
    Text: LTC4280 Hot Swap Controller with 2 I C Compatible Monitoring FEATURES DESCRIPTION n The LTC 4280 Hot Swap controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, board supply voltage


    Original     		PDF LTC4280 10-Bit LTC4245 LTC4260 LTC4261 4280f FDC653N LTC4280 LTC4280C LTC4280CUFD LTC4280I P6KE16A lt 4280

    DMN3730

    Abstract: No abstract text available
    Text: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017 DMN3730

    Untitled

    Abstract: No abstract text available
    Text: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017

    DFN1006-3

    Abstract: DMN2300UFB DMN2300UFB-7 DMN2300UFB-7B
    Text: A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • • ID max TA = 25°C


    Original     		PDF DMN2300UFB DS35235 DFN1006-3 DMN2300UFB DMN2300UFB-7 DMN2300UFB-7B

    DFN1006H4-3

    Abstract: DMN3730UFB4 DMN3730UFB4-7
    Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB4 DS35017 DFN1006H4-3 DMN3730UFB4 DMN3730UFB4-7

    DMN62D1SFB

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADV AN CE I N FORM AT I ON V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications


    Original     		PDF DMN62D1SFB DS35252 DMN62D1SFB

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • • ID max TA = 25°C


    Original     		PDF DMN2300UFB DS35235

    dmn3730ufb4

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017 dmn3730ufb4

    DFN1006-3

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max @ TA = 25°C (Note 4) -20V 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V


    Original     		PDF DMP21D0UFB AEC-Q101 DS35277 DFN1006-3

    marking P6

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -30V Features and Benefits • • • • • • • • Max ID Max RDS(on) @ TA = 25°C 1Ω @ VGS = -4.5V -0.76A 1.5Ω @ VGS = -2.5V -0.62A


    Original     		PDF DMP31D0UFB4 AEC-Q101 DS35587 marking P6

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 400mΩ @ VGS = -4.5V -0.8A 600mΩ @ VGS = -2.5V -0.65A 900mΩ @ VGS = -1.8V -0.56A • • •


    Original     		PDF DMP21D0UFB4 AEC-Q101 DS35279

    DMN3730

    Abstract: DFN1006-3 DMN3730UFB DMN3730UFB-7 MARKING NE
    Text: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data


    Original     		PDF DMN3730UFB DS35018 DMN3730 DFN1006-3 DMN3730UFB DMN3730UFB-7 MARKING NE

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -30V Features and Benefits • • • • • • • • Max ID Max RDS(on) @ TA = 25°C 1Ω @ VGS = -4.5V -0.76A 1.5Ω @ VGS = -2.5V -0.62A


    Original     		PDF DMP31D0UFB4 AEC-Q101 DS35587