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    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23


    Original
    DMP21D0UFB4 AEC-Q101 DS35279 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23


    Original
    DMP21D0UFB4 AEC-Q101 DS35279 PDF

    DFN1006H4-3

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A • •


    Original
    DMP21D0UFB4 DS35279 DFN1006H4-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 400mΩ @ VGS = -4.5V -0.8A 600mΩ @ VGS = -2.5V -0.65A 900mΩ @ VGS = -1.8V -0.56A • • •


    Original
    DMP21D0UFB4 AEC-Q101 DS35279 PDF