MARKING CODE A PACKAGE SOT343 Search Results

MARKING CODE A PACKAGE SOT343 Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)
XPH3R206NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF)
TPH4R008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N)

MARKING CODE A PACKAGE SOT343 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bk marking Abstract: SOT-343 code on semiconductor marking code sot Text: Package Details - SOT-343 Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (10-December 2002)	Original	OT-343 10-December EIA-481-1-A 20x20x10 20x20x20 bk marking SOT-343 code on semiconductor marking code sot	PDF
BAS28 Abstract: No abstract text available Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified	Original	BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W,	PDF
marking CODE JTS Abstract: BAS28 Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified	Original	BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, marking CODE JTS	PDF
Untitled Abstract: No abstract text available Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! , , Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343	Original	BAS28. BAS28/W BAS28 BAS28W OT143 OT343	PDF
marking CODE JTS Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420 Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! , , Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343	Original	BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, marking CODE JTS BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420	PDF
BAS28 Abstract: No abstract text available Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes BAS28/W " ! , , Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified	Original	BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, BAS28W	PDF
MMIC SOT 343 marking CODE Abstract: MARKING CODE A1 SOT343 MGA-53543 MGA-53543-TR1G A004R MMIC marking code 132 GaAs pHEMT Low Noise MMIC Amplifier sot-343 MGA-53543-BLKG avago Date code character identifies month of manufacture Text: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-53543 MGA-53543 5V High Linearity LNA, 39dBm OIP3, 0.45-6GHz, SOT343 SC70 Description This E-pHEMT RFIC is an easy-to-use power-efficient high linearity low noise amplifier built on	Original	MGA-53543 39dBm 45-6GHz, OT343 V/54mA 39dBm, MMIC SOT 343 marking CODE MARKING CODE A1 SOT343 MGA-53543 MGA-53543-TR1G A004R MMIC marking code 132 GaAs pHEMT Low Noise MMIC Amplifier sot-343 MGA-53543-BLKG avago Date code character identifies month of manufacture	PDF
MMIC SOT 343 marking CODE Abstract: MGA-52543-BLKG MGA-52543-TR1G class d amplifier circuit A004R MGA-52543 MGA-52543-TR2G a1 lna SOT343 lna mmic amplifier marking code 425 Text: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-52543 MGA-52543 5V LNA, 32dBm OIP3, 0.4-6GHz, SOT343 SC-70 Description Lifecycle status: Active Features The MGA-52543 is an easy-to-use 5V high linearity low noise amplifier built on Avago's	Original	MGA-52543 32dBm OT343 SC-70) MGA-52543 V/53mA 32dBm, 17dBm MMIC SOT 343 marking CODE MGA-52543-BLKG MGA-52543-TR1G class d amplifier circuit A004R MGA-52543-TR2G a1 lna SOT343 lna mmic amplifier marking code 425	PDF
transistor marking codes list Abstract: BFG325W Text: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	BFG325W/XR OT343R transistor marking codes list BFG325W	PDF
SOt323 marking code 6X Abstract: INFINEON diode MARK 22 bat62-02l E6327 Application Text: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-08S 6 4 3 D 2 D 1 D 1 2 2 1 BAT62-09S 4 5 D 1 1 1 BAT62-07W BAT62-07L4 D 2 6 D 3 1 2 D 2 D 1 D 2 2 4 5 3 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BAT62. BAT62 BAT62-02L BAT62-02W BAT62-03W BAT62-07W BAT62-07L4 BAT62-08S BAT62-09S BAT62 SOt323 marking code 6X INFINEON diode MARK 22 E6327 Application	PDF
bat62-03w Abstract: BAT62 BAT62-02L BAT62-02W BAT62-07L4 BAT62-07W BAT62-09S SCD80 Text: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT62 " BAT62-02W BAT62-03W BAT62-07W ! , " BAT62-09S $ ! , , , , 1 " # , BAT62-02L	Original	BAT62. BAT62 BAT62-02W BAT62-03W BAT62-07W BAT62-09S BAT62-02L BAT62-02LS BAT62-07L4 bat62-03w BAT62 BAT62-02L BAT62-02W BAT62-07L4 BAT62-07W BAT62-09S SCD80	PDF
A7 NPN EPITAXIAL Abstract: Philips FA 145 BFG310W/XR BFG310W Text: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	BFG310W/XR OT343R A7 NPN EPITAXIAL Philips FA 145 BFG310W/XR BFG310W	PDF
BAT62 Abstract: BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80 Text: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-09S 6 4 3 1 D 1 2 2 1 D 2 D 1 D 2 2 4 5 D 2 D 1 1 BAT62-07W BAT62-07L4 1 2 3 ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BAT62. BAT62 BAT62-02L BAT62-02W BAT62-03W BAT62-09S BAT62-07W BAT62-07L4 BAT62 BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80	PDF
bat62-03w Abstract: No abstract text available Text: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 " BAT62-02W BAT62-03W BAT62-07W ! , " BAT62-09S $ ! , , , , " # , BAT62-02L BAT62-02LS 1 2 ! BAT62-07L4 4 3 D2 D1 1 2 ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BAT62. BAT62 BAT62-02W BAT62-03W BAT62-07W BAT62-09S BAT62-02L BAT62-02LS BAT62-07L4 BAT62 bat62-03w	PDF

BAS70 Abstract: BAS70-02L BAS70-02W BAS70-04S marking 77s Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L	Original	BAS70. BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS70 BAS70-02W BAS70-04S marking 77s	PDF
INFINEON diode MARK 22 Abstract: marking code TS marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s bas16 infineon top marking code Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1	Original	BAS70. BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS70-05 INFINEON diode MARK 22 marking code TS marking code 76s BAS70-02W BAS70-04S MARKING 74s marking 77s bas16 infineon top marking code	PDF
marking code 76s Abstract: BAS70-07W BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s E6327 Application Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1	Original	BAS70. BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS70-05 marking code 76s BAS70-07W BAS70-02W BAS70-04S MARKING 74s marking 77s E6327 Application	PDF
bas70-07w Abstract: DIODE MARKING CODE LAYOUT G SOT23 BAS70-04S marking G SOT323 Transistor BAS70-02W BAS70-02L BAS70 Series G t marking SOT323 MARKING 02W marking 20 sot363 Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L	Original	BAS70. BAS170W BAS70-04S: BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S bas70-07w DIODE MARKING CODE LAYOUT G SOT23 BAS70-04S marking G SOT323 Transistor BAS70-02W BAS70-02L BAS70 Series G t marking SOT323 MARKING 02W marking 20 sot363	PDF
DIN 6784 Abstract: BAS140W 47S MARKING Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W ! , BAS40-06 BAS40-06W !	Original	BAS40. /BAS140W BAS140W BAS40-02L BAS40 BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W DIN 6784 47S MARKING	PDF
Untitled Abstract: No abstract text available Text: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)	Original	BAS70. /BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S	PDF
BAS170W Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04 Text: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)	Original	BAS70. /BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04	PDF
45s MARKING CODE Abstract: bas16 sot143 Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W ! , BAS40-06 BAS40-06W !	Original	BAS40. /BAS140W BAS140W BAS40-02L BAS40 BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W 45s MARKING CODE bas16 sot143	PDF
bav99 infineon Abstract: marking A7s A7S MARKING SOT23 BAV99 BAV99 application bav99 Date Code BAV99 soldering free pdf transistor a7s BAV99S BAV99U Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W	Original	BAV99. BAV99S BAV99 BAV99W BAV99S BAV99U bav99 infineon marking A7s A7S MARKING SOT23 BAV99 BAV99 application bav99 Date Code BAV99 soldering free pdf transistor a7s BAV99U	PDF
marking 17 sot343 Abstract: Q62702F1590 BFP450 Text: SIEMENS NPN Silicon RF G rou nded E m itter BFP 405 BFP 420 BFP 450 T ran sisto r Line • • • • • Grounded emitter configuration Very high transition frequency Gold metalization for high reliability Small outline SOT343 package BFP 405 for low current applications	OCR Scan	OT343 Q62702-F1592 Q62702-F1591 Q62702-F1590 marking 17 sot343 Q62702F1590 BFP450	PDF

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MARKING CODE A PACKAGE SOT343 Search Results

MARKING CODE A PACKAGE SOT343 Result Highlights (5)

MARKING CODE A PACKAGE SOT343 Datasheets Context Search

bk marking

BAS28

marking CODE JTS

Untitled

marking CODE JTS

BAS28

MMIC SOT 343 marking CODE

MMIC SOT 343 marking CODE

transistor marking codes list

SOt323 marking code 6X

bat62-03w

A7 NPN EPITAXIAL

BAT62

bat62-03w

BAS70

INFINEON diode MARK 22

marking code 76s

bas70-07w

DIN 6784

Untitled

BAS170W

45s MARKING CODE

bav99 infineon

marking 17 sot343