MARKING CODE A PACKAGE SOT343 Search Results

bk marking

Abstract: SOT-343 code on semiconductor marking code sot
Contextual Info: Package Details - SOT-343 Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (10-December 2002)

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

marking CODE JTS

Abstract: BAS28
Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343

marking CODE JTS

Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343

BAS28

Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes BAS28/W " ! ,  ,  Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

MMIC SOT 343 marking CODE

Abstract: MARKING CODE A1 SOT343 MGA-53543 MGA-53543-TR1G A004R MMIC marking code 132 GaAs pHEMT Low Noise MMIC Amplifier sot-343 MGA-53543-BLKG avago Date code character identifies month of manufacture
Contextual Info: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-53543 MGA-53543 5V High Linearity LNA, 39dBm OIP3, 0.45-6GHz, SOT343 SC70 Description This E-pHEMT RFIC is an easy-to-use power-efficient high linearity low noise amplifier built on

MMIC SOT 343 marking CODE

Abstract: MGA-52543-BLKG MGA-52543-TR1G class d amplifier circuit A004R MGA-52543 MGA-52543-TR2G a1 lna SOT343 lna mmic amplifier marking code 425
Contextual Info: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-52543 MGA-52543 5V LNA, 32dBm OIP3, 0.4-6GHz, SOT343 SC-70 Description Lifecycle status: Active Features The MGA-52543 is an easy-to-use 5V high linearity low noise amplifier built on Avago's

marking 17 sot343

Abstract: Q62702F1590 BFP450
Contextual Info: SIEMENS NPN Silicon RF G rou nded E m itter BFP 405 BFP 420 BFP 450 T ran sisto r Line • • • • • Grounded emitter configuration Very high transition frequency Gold metalization for high reliability Small outline SOT343 package BFP 405 for low current applications

transistor marking codes list

Abstract: BFG325W
Contextual Info: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain

SOt323 marking code 6X

Abstract: INFINEON diode MARK 22 bat62-02l E6327 Application
Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-08S 6 4 3 D 2 D 1 D 1 2 2 1 BAT62-09S 4 5 D 1 1 1 BAT62-07W BAT62-07L4 D 2 6 D 3 1 2 D 2 D 1 D 2 2 4 5 3 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!

bat62-03w

Abstract: BAT62 BAT62-02L BAT62-02W BAT62-07L4 BAT62-07W BAT62-09S SCD80
Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT62 " BAT62-02W BAT62-03W BAT62-07W ! ,  " BAT62-09S $ ! ,    , ,  , 1   " # , BAT62-02L

A7 NPN EPITAXIAL

Abstract: Philips FA 145 BFG310W/XR BFG310W
Contextual Info: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain

BAT62

Abstract: BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80
Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-09S 6 4 3 1 D 1 2 2 1 D 2 D 1 D 2 2 4 5 D 2 D 1 1 BAT62-07W BAT62-07L4 1 2 3 ESD Electrostatic discharge sensitive device, observe handling precaution!

DIN 6784

Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

BAS70

Abstract: BAS70-02L BAS70-02W BAS70-04S marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L

INFINEON diode MARK 22

Abstract: marking code TS marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s bas16 infineon top marking code
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

marking code 76s

Abstract: BAS70-07W BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s E6327 Application
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

bas70-07w

Abstract: DIODE MARKING CODE LAYOUT G SOT23 BAS70-04S marking G SOT323 Transistor BAS70-02W BAS70-02L BAS70 Series G t marking SOT323 MARKING 02W marking 20 sot363
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L

DIN 6784

Abstract: BAS140W 47S MARKING
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W !  ,   BAS40-06 BAS40-06W !

Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)

BAS170W

Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)

45s MARKING CODE

Abstract: bas16 sot143
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W !  ,   BAS40-06 BAS40-06W !

bav99 infineon

Abstract: marking A7s A7S MARKING SOT23 BAV99 BAV99 application bav99 Date Code BAV99 soldering free pdf transistor a7s BAV99S BAV99U
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W