NSR0320MW2T1G
Abstract: NSR0320MW2 NSR0320MW2T1 NSR0320MW2T3 NSR0320MW2T3G
Text: NSR0320MW2T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B
|
Original
|
NSR0320MW2T1
OD-323
NSR0320MW2T1/D
NSR0320MW2T1G
NSR0320MW2
NSR0320MW2T1
NSR0320MW2T3
NSR0320MW2T3G
|
PDF
|
L2ED
Abstract: MBR120ESFT1 MBR120ESFT3
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR120ESFT1
r14525
MBR120ESFT1/D
L2ED
MBR120ESFT1
MBR120ESFT3
|
PDF
|
sod marking L2E
Abstract: MBR120ESFT1 MBR120ESFT1G MBR120ESFT3 MBR120ESFT3G MBR120 MBR120ESF
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR120ESFT1
OD-123
MBR120ESFT1/D
sod marking L2E
MBR120ESFT1
MBR120ESFT1G
MBR120ESFT3
MBR120ESFT3G
MBR120
MBR120ESF
|
PDF
|
MBR130T1
Abstract: MBR130T1G MBR130T3 MBR130T3G
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR130T1,
MBR130T3
OD-123
MBR130T1/D
MBR130T1
MBR130T1G
MBR130T3
MBR130T3G
|
PDF
|
MBR130T1
Abstract: MBR130T1G MBR130T3 MBR130T3G S3M-G
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR130T1,
MBR130T3
OD-123
MBR130T1/D
MBR130T1
MBR130T1G
MBR130T3
MBR130T3G
S3M-G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR120ESFT1
OD-123
38x38
|
PDF
|
NSR0320MW2T1
Abstract: NSR0320MW2T1G NSR0320MW2T3G
Text: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B
|
Original
|
NSR0320MW2T1
NSR0320MW2T1/D
NSR0320MW2T1
NSR0320MW2T1G
NSR0320MW2T3G
|
PDF
|
schottky diode sod-123 marking code 12
Abstract: MMBD301LT1 MMBD701LT1 MMSD301T1 MMSD301T1G MMSD701T1 MMSD701T1G marking AAAA sot23
Text: MMSD301T1, MMSD701T1 Preferred Device SOD−123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications.
|
Original
|
MMSD301T1,
MMSD701T1
OD-123
MMSD701T1
MMBD301LT1,
MMBD701LT1
OT-23
OD-123
MMSD301T1/D
schottky diode sod-123 marking code 12
MMBD301LT1
MMSD301T1
MMSD301T1G
MMSD701T1G
marking AAAA sot23
|
PDF
|
MBR120
Abstract: SOD123FL MBR120LSFT1 MBR120LSFT3
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR120LSFT1
r14525
MBR120LSFT1/D
MBR120
SOD123FL
MBR120LSFT1
MBR120LSFT3
|
PDF
|
Diode marking CODE 5M SOD
Abstract: SOD-123 marking code 24 MMBD301LT1 MMBD701LT1 MMSD301T1 MMSD301T1G MMSD701T1 MMSD701T1G ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Text: MMSD301T1 Preferred Device SOD−123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital
|
Original
|
MMSD301T1
OD-123
MMSD301T1,
MMSD701T1
MMBD301LT1,
MMBD701LT1
OT-23
OD-123
MMSD301T1/D
Diode marking CODE 5M SOD
SOD-123 marking code 24
MMBD301LT1
MMSD301T1
MMSD301T1G
MMSD701T1G
ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
|
PDF
|
MBR140SFT1
Abstract: MBR140SFT3 SOD-123LF
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR140SFT1
r14525
MBR140SFT1/D
MBR140SFT1
MBR140SFT3
SOD-123LF
|
PDF
|
MARKING L3L
Abstract: MSC 0036 MBR130LSFT1 code l3l
Text: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR130LSFT1
OD-123
MBR130LSFT1/D
MARKING L3L
MSC 0036
MBR130LSFT1
code l3l
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR120VLSFT1
MBR120VLSFT1/D
|
PDF
|
MBR120VLSFT1G
Abstract: MBR120VLSFT3G MBR120VLSFT1 MBR120VLSFT3
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR120VLSFT1
OD-123
MBR120VLSFT1/D
MBR120VLSFT1G
MBR120VLSFT3G
MBR120VLSFT1
MBR120VLSFT3
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
|
Original
|
MBR120ESFT1G,
NRVB120ESFT1G,
MBR120ESFT3G,
NRVB120ESFT3G
MBR120ESFT1/D
|
PDF
|
MBR120LSFT1
Abstract: MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR120LSFT1
OD-123
MBR120LSFT1/D
MBR120LSFT1
MBR120LSFT1G
MBR120LSFT3
MBR120LSFT3G
Diode SOd-123 marking cu
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR120ESF,
NRVB120ESF
OD-123
MBR120ESFT1/D
|
PDF
|
MBR120
Abstract: No abstract text available
Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
|
Original
|
MBR120ESFT1G,
NRVB120ESFT1G,
MBR120ESFT3G,
NRVB120ESFT3G
OD-123
MBR120ESFT1/D
MBR120
|
PDF
|
MBR140SFT1G
Abstract: MBR140SFT1 MBR140SFT3 MBR140SFT3G Diode SOd-123 marking cu
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR140SFT1
OD-123
MBR140SFT1/D
MBR140SFT1G
MBR140SFT1
MBR140SFT3
MBR140SFT3G
Diode SOd-123 marking cu
|
PDF
|
MBR130LSFT1G
Abstract: MBR130LSFT1
Text: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR130LSFT1
OD-123
MBR130LSFT1/D
MBR130LSFT1G
MBR130LSFT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR130LSFT1
MBR130LSFT1/D
|
PDF
|
MBR130LSFT1
Abstract: No abstract text available
Text: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package Using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
|
Original
|
MBR130LSFT1
OD-123
MBR130LSFT1/D
MBR130LSFT1
|
PDF
|
BC237
Abstract: jedec package TO-226AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
|
Original
|
BAV99LT1
236AB)
J218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
jedec package TO-226AA
|
PDF
|
transistor 5BM
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current
|
Original
|
MMBD6100LT1
236AB)
DEVICE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
transistor 5BM
BC237
|
PDF
|
