MARKING CODE 153 DIODE SOD 23 Search Results

NSR0320MW2T1G

Abstract: NSR0320MW2 NSR0320MW2T1 NSR0320MW2T3 NSR0320MW2T3G
Contextual Info: NSR0320MW2T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B

L2ED

Abstract: MBR120ESFT1 MBR120ESFT3
Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

sod marking L2E

Abstract: MBR120ESFT1 MBR120ESFT1G MBR120ESFT3 MBR120ESFT3G MBR120 MBR120ESF
Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G S3M-G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

NSR0320MW2T1

Abstract: NSR0320MW2T1G NSR0320MW2T3G
Contextual Info: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B

schottky diode sod-123 marking code 12

Abstract: MMBD301LT1 MMBD701LT1 MMSD301T1 MMSD301T1G MMSD701T1 MMSD701T1G marking AAAA sot23
Contextual Info: MMSD301T1, MMSD701T1 Preferred Device SOD−123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications.

MBR120

Abstract: SOD123FL MBR120LSFT1 MBR120LSFT3
Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Diode marking CODE 5M SOD

Abstract: SOD-123 marking code 24 MMBD301LT1 MMBD701LT1 MMSD301T1 MMSD301T1G MMSD701T1 MMSD701T1G ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MMSD301T1 Preferred Device SOD−123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital

MBR140SFT1

Abstract: MBR140SFT3 SOD-123LF
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MARKING L3L

Abstract: MSC 0036 MBR130LSFT1 code l3l
Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR120VLSFT1G

Abstract: MBR120VLSFT3G MBR120VLSFT1 MBR120VLSFT3
Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

MBR120LSFT1

Abstract: MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu
Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR120

Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

MBR140SFT1G

Abstract: MBR140SFT1 MBR140SFT3 MBR140SFT3G Diode SOd-123 marking cu
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130LSFT1G

Abstract: MBR130LSFT1
Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130LSFT1

Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package Using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

BC237

Abstract: jedec package TO-226AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage

transistor 5BM

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current