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    MARKING C9 SOT23 Search Results

    MARKING C9 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING C9 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code C9

    Abstract: CV 203 KV1450
    Text: KV1450 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Series Resistance Excellent Linearity CV Curve Large Capacitance Ratio (A1 = 4.60 minimum) Two Diodes in a Miniature Package (SOT23-3)


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    PDF KV1450 OT23-3) KV1450 KV450 miniatu28-2375 IC-xxx-KV1471E 0798O0 marking code C9 CV 203

    CV 203

    Abstract: marking code C9 F3 SOT23-3
    Text: KV1430 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 3.70 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel


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    PDF KV1430 OT23-3) KV1430 OT2375 IC-xxx-KV1471E 0798O0 CV 203 marking code C9 F3 SOT23-3

    KV1450

    Abstract: F5 MARK
    Text: KV1450 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Series Resistance Excellent Linearity CV Curve Large Capacitance Ratio (A1 = 4.60 minimum) Two Diodes in a Miniature Package (SOT23-3)


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    PDF KV1450 OT23-3) KV1450 KV450 miniatu28-2375 IC-xxx-KV1450 0300O0 F5 MARK

    si3054

    Abstract: Si3052 Si3019 Application Note MIL-C-8 rj11 pcb mount ON MARKING R59 sot89 RJ11 4/4 connector RJ11 diagram Si3019 AN67
    Text: AN67 Si3050/52/54/56 L A Y O U T G U I D E L I N E S Description The Si305x chipsets improve upon Silicon Laboratories’ groundbreaking family of silicon direct access arrangement DAA products by providing the highest integration, lowest cost, and smallest area DAA solution


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    PDF Si3050/52/54/56 Si305x Si305x, si3054 Si3052 Si3019 Application Note MIL-C-8 rj11 pcb mount ON MARKING R59 sot89 RJ11 4/4 connector RJ11 diagram Si3019 AN67

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC1G34 SCES519I – DECEMBER 2003 – REVISED JUNE 2011 www.ti.com SINGLE BUFFER GATE Check for Samples: SN74LVC1G34 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


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    PDF SN74LVC1G34 SCES519I 24-mA 000-V A114-A) A115-A)

    c34r

    Abstract: No abstract text available
    Text: SN74LVC1G34 SCES519I – DECEMBER 2003 – REVISED JUNE 2011 www.ti.com SINGLE BUFFER GATE Check for Samples: SN74LVC1G34 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


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    PDF SN74LVC1G34 SCES519I 24-mA 000-V A114-A) A115-A) c34r

    Marking c9 SOT23-5

    Abstract: SOT23-5 marking c9
    Text: SN74LVC1G34 SCES519I – DECEMBER 2003 – REVISED JUNE 2011 www.ti.com SINGLE BUFFER GATE Check for Samples: SN74LVC1G34 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


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    PDF SN74LVC1G34 SCES519I 24-mA 000-V A114-A) A115-A) Marking c9 SOT23-5 SOT23-5 marking c9

    KV1735STL-G

    Abstract: top marking 7485
    Text: KV1735 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve


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    PDF KV1735 KV1735 100MHz measure14 70MHz 50MHz 100MHz KV1735STL-G top marking 7485

    KV1735STL-G

    Abstract: KV1735RTL-G KV1735
    Text: KV1735 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve


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    PDF KV1735 100MHz 50MHz 70MHz KV1735STL-G KV1735RTL-G KV1735

    Untitled

    Abstract: No abstract text available
    Text: TKV1750A 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve


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    PDF TKV1750A 100MHz

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 transistor WB1
    Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source


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    PDF MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


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    PDF MRF9080 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1

    NIPPON CAPACITORS

    Abstract: Transistor J438 CRCW08051001FKEA MRF21010
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010

    CRCW08051001FKEA

    Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
    Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010--2 MRF21010LSR1 CRCW08051001FKEA TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010

    marking C9R

    Abstract: C34F c34r marking c9k C34F 6 pin c34k marking c9f CODE C9F c342
    Text: SN74LVC1G34 SCES519I – DECEMBER 2003 – REVISED JUNE 2011 www.ti.com SINGLE BUFFER GATE Check for Samples: SN74LVC1G34 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


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    PDF SN74LVC1G34 SCES519I 24-mA 000-V A114-A) A115-A) marking C9R C34F c34r marking c9k C34F 6 pin c34k marking c9f CODE C9F c342

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC1G34 www.ti.com SCES519J – DECEMBER 2003 – REVISED DECEMBER 2013 Single Buffer Gate Check for Samples: SN74LVC1G34 FEATURES DESCRIPTION • This single buffer gate is designed for 1.65-V to 5.5-V VCC operation. The SN74LVC1G34 performs the Boolean function Y = A in positive logic.


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    PDF SN74LVC1G34 SCES519J SN74LVC1G34 24-mA

    marking W26 sot23

    Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
    Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters


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    PDF OT23-3 OT-23) OT23-5 OT-25) TK73249M OT23L-8 TK73250M TK73255M marking W26 sot23 SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC1G34 www.ti.com SCES519J – DECEMBER 2003 – REVISED DECEMBER 2013 Single Buffer Gate Check for Samples: SN74LVC1G34 FEATURES DESCRIPTION • This single buffer gate is designed for 1.65-V to 5.5-V VCC operation. The SN74LVC1G34 performs the Boolean function Y = A in positive logic.


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    PDF SN74LVC1G34 SCES519J SN74LVC1G34 24-mA

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC1G34 www.ti.com SCES519J – DECEMBER 2003 – REVISED DECEMBER 2013 Single Buffer Gate Check for Samples: SN74LVC1G34 FEATURES DESCRIPTION • This single buffer gate is designed for 1.65-V to 5.5-V VCC operation. The SN74LVC1G34 performs the Boolean function Y = A in positive logic.


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    PDF SN74LVC1G34 SCES519J SN74LVC1G34 24-mA

    capacitor 2200 micro M

    Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking
    Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs


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    PDF MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LSR1 macom marking

    CRCW08051001FKEA

    Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
    Text: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010--1 MRF21010LR1 CRCW08051001FKEA MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010

    CRCW08052201FKEA

    Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
    Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,


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    PDF MRF21010--1 MRF21010LR1 CRCW08052201FKEA CRCW080510R0FKE MRF21010-1 MRF21010

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS307 Features SOT-23 3 +0.1 2.4-0.1 :CT = 3.0 pF Typ 0.4 :IR= 0.1 nA (Typ) 1 0.55 Low reverse Current +0.1 1.3-0.1 :VF =1.0 V(Typ) Small total capacitance Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low forward voltage 2 +0.1 0.95-0.1 +0.1


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    PDF 1SS307 OT-23

    Untitled

    Abstract: No abstract text available
    Text: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 15 5 14 6 13 GND/NC RFout/Vcc RFout/Vcc


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    PDF TQP7M9104 24-pin