MARKING C2D Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

Contextual Info: Data Sheet Rev. 1.1 30.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: 200Pin SO-DIMM • SEN02G64T1BJ2WI-25R 2GB PC2-6400 in COB Technology RoHS compliant •     Options: DataRate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 Marking -25 -30 Module density

MARKING c1y

Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART

SMD Code 12W SOT-23

Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

C2D05120

Abstract: High Voltage Multipliers TO-252-2 C2D05120E
Contextual Info: C2D05120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior

C2D20120

Abstract: D20120 C2D20120D
Contextual Info: C2D20120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

D 16027 G

Abstract: C2D10120 C2D10120D CSD10120
Contextual Info: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D05120E

Abstract: C2D05120 cree marking information
Contextual Info: C2D05120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior

C2D10120D

Abstract: C2D10120 BB 313 TO247-3
Contextual Info: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D20120D

Abstract: BB 313 C2D20120 14148 TO247-3
Contextual Info: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

Contextual Info: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

Contextual Info: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D10120A

Abstract: C2D10120
Contextual Info: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D05120E

Contextual Info: C2D05120E VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 8.5 A Rectifier Features 1200 V Qc = 28 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D20120D

Contextual Info: C2D20120D VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 29 A* Rectifier Features 1200 V Qc = 122 nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation

C2D10120

Abstract: C2D10120A IN223
Contextual Info: C2D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

C2D05120

Abstract: ua 8560 1200-VOLT C2D05120A defibrillator High Voltage Multipliers
Contextual Info: C2D05120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D10120D

Contextual Info: C2D10120D VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 18 A* Rectifier Features 1200 V Qc = 56 nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation