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    C2D10120 Search Results

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    C2D10120 Price and Stock

    WeEn Semiconductor Co Ltd WNSC2D101200WQ

    DIODE SIL CARB 1.2KV 10A TO247-2
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    DigiKey WNSC2D101200WQ Tube 2,317 1
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    Newark WNSC2D101200WQ Bulk 541 1
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    Avnet Silica WNSC2D101200WQ 37 Weeks 600
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    Wolfspeed C2D10120D

    DIODE ARR SIC 1200V 10A TO247-3
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    Wolfspeed C2D10120A

    DIODE SIL CARB 1.2KV 31A TO220-2
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    WeEn Semiconductor Co Ltd WNSC2D1012006Q

    DIODE SIL CARB 1.2KV 10A TO220AC
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    DigiKey WNSC2D1012006Q Tube 3,000
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    EBV Elektronik WNSC2D1012006Q 9 Weeks 1,000
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    WeEn Semiconductor Co Ltd WNSC2D101200W6Q

    DIODE SIL CARB 1.2KV 10A TO247-2
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    DigiKey WNSC2D101200W6Q Tube 600
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    Mouser Electronics WNSC2D101200W6Q
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    C2D10120 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C2D10120 Unknown Silicon Carbide Schottky Diode Original PDF
    C2D10120A Cree Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 17A TO220-2 Original PDF
    C2D10120A Unknown Silicon Carbide Schottky Diode Original PDF
    C2D10120D Cree Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 10A TO247 Original PDF
    C2D10120D Unknown Silicon Carbide Schottky Diode Original PDF

    C2D10120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2D10120D

    Abstract: C2D10120 BB 313 TO247-3
    Text: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    PDF C2D10120D 1200-Volt O-247-3 C2D10120D C2D10120 BB 313 TO247-3

    C2D10120

    Abstract: C2D10120A IN223
    Text: C2D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    PDF C2D10120A 1200-Volt O-220-2 C2D10120 IN223

    C2D10120A

    Abstract: C2D10120
    Text: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior


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    PDF C2D10120 1200-Volt O-220-2 C2D10120A C2D10120A

    C2D10120D

    Abstract: No abstract text available
    Text: C2D10120D VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 18 A* Rectifier Features 1200 V Qc = 56 nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    PDF C2D10120D O-247-3 C2D10120D

    Untitled

    Abstract: No abstract text available
    Text: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    PDF C2D10120â 1200-Volt O-220-2 C2D10120A C2D10120

    Untitled

    Abstract: No abstract text available
    Text: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior


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    PDF C2D10120â 1200-Volt O-220-2 C2D10120A C2D10120

    D 16027 G

    Abstract: C2D10120 C2D10120D CSD10120
    Text: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior


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    PDF C2D10120D 1200-Volt O-247-3 C2D10120D C2D10he D 16027 G C2D10120 CSD10120

    Untitled

    Abstract: No abstract text available
    Text: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    PDF C2D10120Dâ 1200-Volt O-247-3 C2D10120D

    Untitled

    Abstract: No abstract text available
    Text: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior


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    PDF C2D10120Dâ 1200-Volt O-247-3 C2D10120D

    Untitled

    Abstract: No abstract text available
    Text: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    PDF C2D10120â 1200-Volt O-220-2 C2D10120A C2D10120

    C2D10120A

    Abstract: No abstract text available
    Text: C2D10120A VRRM VRRM= 1200 = 1200 V V Silicon Carbide Schottky Diode Zero R ecovery Rectifier Features • • • • • • • IF TC=135˚C = 14.5 A IF = 10 A Qc nC 61 nC Qc = 61 Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage


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    PDF C2D10120A O-220-2 C2D10120 C2D10120A

    C3D20060

    Abstract: c3d0606 C3D10060 C3D04060 C2D20120D c3d10060a C3D08060 C3D02060A C3D02060E C3D04060E
    Text: Power Product Line Z-RecTM Rectifiers DALL, Rev. C Datasheet: C3 VRRM V IF(AVG) (A) and Zero-Recovery Rectifiers VF(TJ=25°C) Typ Max VF(TJ=175°C) Typ Max TJ(Max) Package Type CSD01060A 600 1 1.6 1.8 2.0 2.4 175°C TO-220-2 See Fig. 1 CSD01060E 600 1


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    PDF CSD01060A O-220-2 CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E C3D20060 c3d0606 C3D10060 C3D04060 C2D20120D c3d10060a C3D08060 C3D02060A C3D02060E C3D04060E

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    C2D20120D

    Abstract: No abstract text available
    Text: C2D20120D VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 29 A* Rectifier Features 1200 V Qc = 122 nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


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    PDF C2D20120D O-247-3 C2D20120D

    CSD08060

    Abstract: CSD01060E CSD08060A CSD04060E MMA6200Q CSD01060A CSD02060A CSD02060G CSD04060A CSD06060A
    Text: Power Product Line Zero Recovery Rectifiers DALL, Rev. K Datasheet: CS VRRM V IF(AVG) (A) VF(TJ=25°C) Typ Max VF(TJ=175°C) Typ Max TJ(Max) Package Type CSD01060A 600 1 1.6 1.8 2.0 2.4 175°C TO-220-2 See Fig. 1 CSD01060E 600 1 1.6 1.8 2.0 2.4 175°C


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    PDF O-220-2 CSD01060E CSD02060A CSD02060G CSD04060A CSD04060E CSD06060A CSD08060 CSD01060E CSD08060A CSD04060E MMA6200Q CSD01060A CSD02060A CSD02060G CSD04060A CSD06060A

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    CPMF-1200-S080B

    Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


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    PDF CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die

    bare Die mosfet

    Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G


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    PDF CPMF-1200-S080B CPMF-1200-S080B bare Die mosfet DMOSFET CMF20120 ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit

    DMOSFET

    Abstract: CMF10120 CMF10120D CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET
    Text: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 160 mΩ N-Channel Enhancement Mode Qg Features • • • • • • Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


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    PDF CMF10120D-Silicon CMF10120D O-247-3 CMF10120D DMOSFET CMF10120 CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    CPMF-1200-S160B

    Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


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    PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D

    DMOSFET

    Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate


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    PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC Cree SiC MOSFET SiC POWER MOSFET

    C3D10060

    Abstract: CSD01060E C3D02060 c3d10060a C3D02060A c3d20060 C3D10060G DSA006516 C3D03060E C3D04060E
    Text: Power Product Line Z-RecTM Rectifiers DALL, Rev. B Datasheet: C3 VRRM V IF(AVG) (A) and Zero-Recovery Rectifiers VF(TJ=25°C) Typ Max VF(TJ=175°C) Typ Max TJ(Max) Package Type CSD01060A 600 1 1.6 1.8 2.0 2.4 175°C TO-220-2 See Fig. 1 CSD01060E 600 1


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    PDF O-220-2 CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E D10120A C3D10060 CSD01060E C3D02060 c3d10060a C3D02060A c3d20060 C3D10060G DSA006516 C3D03060E C3D04060E

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


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    PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A