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    MARKING BR SOT Search Results

    MARKING BR SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING BR SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking BS sot23

    Abstract: marking Bq sot23 2SC2412 Transistor marking BQ marking BQ sot-23 Marking br sot23 Transistor bs sot23 marking BS SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC2412 100MHz marking BS sot23 marking Bq sot23 2SC2412 Transistor marking BQ marking BQ sot-23 Marking br sot23 Transistor bs sot23 marking BS SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors 2SC5658 General purpose transistors NPN SOT-723 FEATURES z Low Cob z Complements the 2SA2029 1. BASE 2. EMITTER 3. COLLECTOR Marking: BQ BR BS Absolute maximum ratings (Ta=25 ℃unless otherwise noted)


    Original     		PDF OT-723 2SC5658 OT-723 2SA2029 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC2412 100MHz 2SA2412

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel


    Original     		PDF L2SC2412KXLT1G L2SC2412KQLT1G L2SC2412KQLT3G L2SC2412KRLT1G L2SC2412KRLT3G L2SC2412KSLT1G L2SC2412KSLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel


    Original     		PDF L2SC2412KXLT1G L2SC2412KQLT1G L2SC2412KQLT3G L2SC2412KRLT1G L2SC2412KRLT3G L2SC2412KSLT1G L2SC2412KSLT3G

    marking BS SOT23

    Abstract: marking Bq sot23 marking BQ sot-23 bq transistor sot23 transistor sot23 MARKING 560 Transistor marking BQ Marking br sot23 Transistor marking br sot23 marking BS SOT-23 transistor sot23 pf
    Text: 2SC2412 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


    Original     		PDF OT-23 2SC2412 OT-23 100MHz marking BS SOT23 marking Bq sot23 marking BQ sot-23 bq transistor sot23 transistor sot23 MARKING 560 Transistor marking BQ Marking br sot23 Transistor marking br sot23 marking BS SOT-23 transistor sot23 pf

    Untitled

    Abstract: No abstract text available
    Text: 2SC2412K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features — Low Cob ,Cob = 2.0 pF (Typ). — Complements the 2SA1037AK 2.80 1.60 MARKING : BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 2SC2412K OT-23-3L OT-23-3L 2SA1037AK 100MHz

    2SC2412K

    Abstract: 2SA1037AK
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC2412K SOT-23-3L TRANSISTOR NPN FEATURES z Low Cob ,Cob = 2.0 pF (Typ). z Complements the 2SA1037AK 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SC2412K OT-23-3L 2SA1037AK 100MHz 2SC2412K 2SA1037AK

    N790A

    Abstract: STN790A
    Text: STN790A MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR • ■ ■ ■ ■ ■ Type Marking STN790A N790A VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT 60 V BREAKDOWN VOLTAGE V(BR CER)


    Original     		PDF STN790A N790A OT-223 OT-223 N790A STN790A

    TRANSISTOR D882 input

    Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet
    Text: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25


    Original     		PDF OT-89 OT-89 TRANSISTOR D882 input D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet

    FH9014

    Abstract: FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16
    Text: SOT-23 三极管（SOT-23 TRANSISTORS） 型号 TYPE VCBO V VCEO V IC mA PD mW FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FHT817-16 FHT817-25 FHT817-40 FHT846A FHT846B FHT847A FHT847B FHT847C FHT848A FHT848B FHT848C FHT849A FHT849B FHT849C


    Original     		PDF OT-23 FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FH9014 FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 肖特基二极管（SOT-23 SCHOTTKY BARRIER DIODES） 型号 TYPE FHBAS40 FHBAS40-04 FHBAS40-06 FHBAS70 FHBAS70-04 FHBAT54 FHBAT54A V（BR）R Min Vdc IR µA 40 10 40 10 40 10 70 10 70 10 30 10 30 10 IF mA Min 200 200 VF Vdc mA Max V IF 0.5 30 0.5


    Original     		PDF OT-23 OT-23 FHBAS40 FHBAS40-04 FHBAS40-06 FHBAS70 FHBAS70-04 FHBAT54 FHBAT54A FHBAT54C

    Untitled

    Abstract: No abstract text available
    Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Die Construction Two internal isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package SOT-363 A C1 B2 E2 Mechanical Data · · · · · · ·


    Original     		PDF BC847PN OT-363 OT-363, J-STD-020A MIL-STD-202, DS30278 BC847PN-7 3000/Tape

    marking C1

    Abstract: TMPTA70 TMPT5401 h2t1
    Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0


    OCR Scan     		PDF OT-23/TO-236AB BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B BCW68F marking C1 TMPTA70 TMPT5401 h2t1

    tn2460

    Abstract: TN2460T
    Text: HSffSi TN2460 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BR DSS TN2460L 240 TN2460T 240 "W1 >D (mA) PACKAGE 60 76 TO-92 60 51 SOT-23 Performance Curves: VNDN24 J¥ PRODUCT MARKING TN2460T TQ3 TO-92 (TO-226AA) BOTTOM VIEW


    OCR Scan     		PDF TN2460 O-226AA) TN2460L TN2460T OT-23 VNDN24

    zt751

    Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
    Text: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30


    OCR Scan     		PDF OT-223 BSP19AT1 PZTA42T1 BF720T1 BSP20AT1 SP19A BF720 SP20A PZTA98T1 PZTA92T1 zt751 3055L 2955E 3055e zta96 2N02L marking 651 sot223

    Untitled

    Abstract: No abstract text available
    Text: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF VN0605T OT-23 VNDS06

    motorola p1f

    Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
    Text: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1


    OCR Scan     		PDF OT-223 318E-04 BCP56T1 BCP53T1 PZT2222AT1 PZT2907AT1 BSP52T1 PZTA14T1 motorola p1f P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING

    itt 2222a

    Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
    Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min


    OCR Scan     		PDF PZT2222A PZT2907A PZTA14 BSP52 ZTA14 PZTA64 ZTA64 PTZA42 TZA42 itt 2222a itt 2907A motorola diode cross reference PTZA92 2222a pinout 2907A bs33 zta96

    MMBT3960

    Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2


    OCR Scan     		PDF OT-23 MMBT3960A MMBT3960 MMBT6543 MMBTH10 MMBC1321Q2 MMBC1321Q3 MMBC1321Q4 MMBC1321Q5 MMBT918 MMBT4260 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1

    150X1

    Abstract: No abstract text available
    Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7002 OT-23 VNDS06 150X1, 150X1

    MLL34

    Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
    Text: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max


    OCR Scan     		PDF BC846AT BC846BT BC817-16L BC817-25L BC817-40L BC847AT BC847BT BC847CT BCX70KL BCW72L MLL34 m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking

    marking D76

    Abstract: No abstract text available
    Text: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D


    OCR Scan     		PDF OT-23/TO-236AB BAV74 marking D76

    transistors for uhf oscillators

    Abstract: MMBT2369LT1 sot-23 Marking 3D MMBTH69 transistors for oscillators uhf
    Text: SOT-23 TRANSISTORS continued Switching Transistors The following tables are a listing of devices intended for high-speed, low saturation voltage, switching applications. These devices have very fast switching times and low output capacitance for optimized switching performance.


    OCR Scan     		PDF OT-23 MMBT2369LT1 BSV52LT1 MMBT3640LT1 intendeH10LT1 MMBT918LT1 MMBTH24LT1 MMBTH81LT1 MMBTH69LT1 MMBT404ALT1 transistors for uhf oscillators sot-23 Marking 3D MMBTH69 transistors for oscillators uhf