MARKING AOO Search Results

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

marking A45

Abstract: ERC13 mla diode
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ fc iv • Marking Compact size, lightweight

Z301-10

Abstract: D58ZOV271RA09 D58ZO VARISTOR 58819 z950 Z350-01 z301 150vac Z151-02 Z271-09 z30001
Contextual Info: 5 8 E s a X i m u m Part Number 5m m D isc D iam eter D58ZOV110R AOO D58ZOV140R A00 Actual Part Marking Continuous Rated Voitape AC RMS DC Volts Volts R I R a t i n n s E Ie ct r i c a I Rated Sinale Pulse Transient E nergy Peak 2ms 10/1000|js 8/20fiS Joules

diode A44

Abstract: marking A45 ERC13
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ fc iv • Marking Compact size, lightweight High reliability

H0263

Abstract: ETT4
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ f c iv • Marking Compact size, lightweight

BF961

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF961 • For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code BF 961 - Q62702-F518 Pin Configuration 2 1 3 4 S D Gz Package1 Gì X-plast Maximum Ratings Parameter Symbol Values Unit Drain-source voltage

TRANSISTOR BL s93

Abstract: K1007
Contextual Info: 0. H . . ÿ » ; . . ‘ ••* • ".••• • •_ :?•: • . ■• • • I : • ' '• description 2. : QUALITY RATINGit-' . c o n t e n t s V 3. > ELLIOTT BART CODE NUMBER - 4* MECHANICAL DIMENSIONS & OUTLINES 5* MARKING 6« WEIGHT ABSOLUTE MAXIMUM RATING

4D0101

Abstract: microstripline FR4 5964-9806E
Contextual Info: mam H E W L E T T IS S A PACKARD 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • Ultra-M iniature Package • Internally Biased, Single +5 V Supply (14 mA)

Contextual Info: CASE FINISH CURRENT AMPS 15 SOLDER WORKING VOLTAGE -5 5 X TO +85,C AC MAXIMUM DC RESISTANCE (OHMS) - 5 5 t TO +125-C DC DC AC 100 150 0.003 MAXIMUM VOLTAGE DROP AC DC MINIMUM CAPACITANCE (uF) 0 .045 PART MARKING: MIN. INSERTION LOSS PER M IL-STD -220, FULL LOAD, +25‘ C

Contextual Info: aoo 2 Interface Modules [ e l e c t iM IfM C i F ro n t- e n try VOLUME 1 Interface module D-Sub header mounting carrier fo r D IN 3 5 rail 0 .0 8 t_^ D e sc rip tio n 2.5 m m 2 / AWG 28 - 1 2 5 - 6 m m / 0 .2 2 in No. of "L" Ite m - N o . p o le s m m / in

Contextual Info: 4 3 Mo dacuwra^liMho g ry rty^ a fj*mp h «^C cip c«^^ M ?radon ftrdomararfooture or Aoolod ah no a mrightt Stovgranted ta i priort>oonoort C m?ook ayrHt MitInfawwodon thlo rioouwont _ TOLERANCE + / - 0 . 0 3 Customer drawing 4 3 _ 1_

Contextual Info: MICRON TECHNOL OGY INC 17E D biiisMT aooiôoa t • ADVANCE RON MT42C4256 883C MILITARY VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • Industry standard pin-out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply

diodes B2V

Abstract: B50C marking 27.A STG-65 Thomson BZV BZV27 general semiconducteur thomson diodes
Contextual Info: L S G | s^c D S -T H O M S O N Q 7^23? aooasbD □ THOMSON-C5F * BZV27,A — BZV31,A DIVISION SEMICONDUCTEURS VOLTAGE REFERENCE DIODES TEMPERATURE COMPENSATED ^ D IO D E S D E R É F É R E N C E D E T E N S IO N ! C O M P E N S É E S E N T E M P É R A T U R E )

Contextual Info: LO O NOTES : I. < o MATERIAL : HOUSING - NYLON 66 THERMO PLASTIC, 94V-0 TERMINAL - CARTRIDGE BRASS PLATING - PRE-PLATED TIN ALLOY T^7MARK "P8.P91 ON BACKWALL.TO BE AS LARGE AS POSSIBLE T^7THE VOID OPTION IS FOR THE POLARIZATION KEY A. PART NO. LEGEND : 87218 - 0 6 * *

Contextual Info: CML Semiconductor Products s o n r PRODUCT INFORMATION í^ ry c o Q r Aooy = Low-Voltage/High-Speed GMSK Modem Publication D/589/7 January 1998 Features Applications • Full-Duplex Gaussian Minimum Shift Keying GMSK Operating from 3 Volts to 5.5 Volts •

c 2579 power transistor

Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Contextual Info: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage

CMPD2836

Abstract: CMPD2838 marking code ca2 marking code C1 marking code c2 marKing CA2 sot-23
Contextual Info: Central” CMPD2836 CMPD2838 Sem iconductor Corp. DUAL SILICON SWITCHING DIODE DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CMPD2836, CMPD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy

k0302

Abstract: topcon smd transistor 912 F380 Q 63045
Contextual Info: Yokohama Electron LED Lighting Solution P8B – Position Light Type SMD 8 mm round SMD 4 & 6 Chips Colors: White, Red, Green, Blue, Amber Yokohama Electron Co., Ltd. 1-35-16 Nakagawa-Chuo, Tsuzuki-ku, Yokohama, Kanagawa 224-0003 Japan Tel: 045-912-9000 Fax: 045-912-9009

3373J

Abstract: 2151A2
Contextual Info: SURFACE MOUNT 3MM SQUARE / SINGLE­ TURN CERMET / PROCESS SEALED • ■ ■ ■ Compatible with surface mount manufacturing processes Rotor stop for “in-circuit” adjustment 5 cycle rotational and seal life Patent #5043695 assembly for reliable miniature construction

pm9820 SUMITOMO

Abstract: ELF605F PM-9820 bobbin PM-9820 bobbin SUMITOMO coil wire 2UEW E41404 ELF609F ELF18D615 ELF609 SUMITOMO pm8315
Contextual Info: I fi 0 Date of Issue : 2002^4^243 A p r il £ 4 ,2 0 0 2 38 f t K f t Classification: DIG I- K E Y <i*n À New □ Change □ t>j i ± PRODUCT SPECIFICATION FOR INFORMATION s s » . Product Description m on P°P m Product Part Number « T pap # Matsushita Part Number

8088 intel microprocessor pin diagram

Abstract: Motorola 6502 6800 intel microprocessor pin diagram 8048 intel microprocessor pin diagram motorola 6809 8048 micro controller block diagram 6809 MPU EF9369 EF9369-30 tea5114
Contextual Info: rZ Z ^ 7 # S C S -T H O M S O N H iI T [M 0 g S 5 E F 9 3 6 9 HMOS2 - SINGLE CHIP COLOR PALETTE • ON CHIP COLOR LOOK-UP TABLE ■ 4096 COLOR PALETTE (16 colors selected from 4096 ■ ON-CHIP THREE 4-BIT RESOLUTION VIDEO DACs WITH y LAW CORRECTION ■ DOT RATE UP to 30 MEGADOTS PER SE­

DF40PC3

Abstract: J532 SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF40PC3 o u t lin e 30V 40A F e a tu re • SMD • î • SM D 3 V f = 0 .4 V • U ltra-Low V f=0.4V • High lo R ating-Sm all-R K G M a in U s e • /w x u -æ s B m t • Reverse connect protection for DC pow er source

diode marking code I5

Contextual Info: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded

D240SC4M

Contextual Info: Schottky Barrier Diode Diode Module •¿m H OUTLINE D240SC4M 40V 240A Feature • High Io Rating-Module-PKG •« V • Low V f f • Small 9 je • 8 jcÖ ^/JV c^L' Main Use • High Power Switching Regulator • DC/DC Converter • Main Frame • IC Tester