Untitled
Abstract: No abstract text available
Text: . T H I R DA N G L EP R O J E C T I O N ALTERATION I SS U E RATED CAP DIMENSIONS ITEM CODE ※ L ※T ※H ※ d VOLTAGE F ECQE41030T3 400VDC O . 01 1O .8 4 .4 O .6 .3 7 f / f / f / 41230T3 O . 012 4 .4 7 .5 " / 1 / 1 H / 1 / 1 f / 41530T3 O . 015 / 1
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ECQE41030T3
41230T3
41530T3
41830T3
42230T3
42730T3
43330T3
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k0302
Abstract: topcon smd transistor 912 F380 Q 63045
Text: Yokohama Electron LED Lighting Solution P8B – Position Light Type SMD 8 mm round SMD 4 & 6 Chips Colors: White, Red, Green, Blue, Amber Yokohama Electron Co., Ltd. 1-35-16 Nakagawa-Chuo, Tsuzuki-ku, Yokohama, Kanagawa 224-0003 Japan Tel: 045-912-9000 Fax: 045-912-9009
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K-03021301-2
date20030510
P8B-41D-S
Y-030001
Tape-Ree11000piecesreel
k0302
topcon
smd transistor 912
F380
Q 63045
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A1807
Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Text: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for
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2SA1807F5
SC-63)
A1807
nw-60
pnp transistor 600V
2SA1807F5
transistor marking code NW
transistors 2SA
transistor 2SA 6 J
transistor 2SA 600v
PNP -600v
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marking A45
Abstract: ERC13 mla diode
Text: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ fc iv • Marking Compact size, lightweight
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ERC13
JSfflS14
marking A45
mla diode
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Z301-10
Abstract: D58ZOV271RA09 D58ZO VARISTOR 58819 z950 Z350-01 z301 150vac Z151-02 Z271-09 z30001
Text: 5 8 E s a X i m u m Part Number 5m m D isc D iam eter D58ZOV110R AOO D58ZOV140R A00 Actual Part Marking Continuous Rated Voitape AC RMS DC Volts Volts R I R a t i n n s E Ie ct r i c a I Rated Sinale Pulse Transient E nergy Peak 2ms 10/1000|js 8/20fiS Joules
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8/20fiS
8/20ns
D58ZOV110RAOO
D58ZOV140R
D58ZOV17Ã
D58ZOV200RA00
D58ZOV25Ã
D58ZOV300RA01
D58ZOV350RA01
D58ZOV400RA01
Z301-10
D58ZOV271RA09
D58ZO
VARISTOR 58819
z950
Z350-01
z301 150vac
Z151-02
Z271-09
z30001
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diode A44
Abstract: marking A45 ERC13
Text: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ fc iv • Marking Compact size, lightweight High reliability
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ERC13
JSfflS14
diode A44
marking A45
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H0263
Abstract: ETT4
Text: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ f c iv • Marking Compact size, lightweight
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ERC13
28MIN
JSfflS14
I95t/R89)
H0263
ETT4
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BF961
Abstract: No abstract text available
Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF961 • For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code BF 961 - Q62702-F518 Pin Configuration 2 1 3 4 S D Gz Package1 Gì X-plast Maximum Ratings Parameter Symbol Values Unit Drain-source voltage
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BF961
Q62702-F518
A235b05
QDbbfl37
EHM07003
fi23SbD5
BF961
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TRANSISTOR BL s93
Abstract: K1007
Text: 0. H . . ÿ » ; . . ‘ ••* • ".••• • •_ :?•: • . ■• • • I : • ' '• description 2. : QUALITY RATINGit-' . c o n t e n t s V 3. > ELLIOTT BART CODE NUMBER - 4* MECHANICAL DIMENSIONS & OUTLINES 5* MARKING 6« WEIGHT ABSOLUTE MAXIMUM RATING
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4D0101
Abstract: microstripline FR4 5964-9806E
Text: mam H E W L E T T IS S A PACKARD 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • Ultra-M iniature Package • Internally Biased, Single +5 V Supply (14 mA)
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MGA-86563
OT-363
SC-70)
0j062
0X6910004
0X006
0X0004
5964-9806E
4746E
4D0101
microstripline FR4
5964-9806E
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Untitled
Abstract: No abstract text available
Text: CASE FINISH CURRENT AMPS 15 SOLDER WORKING VOLTAGE -5 5 X TO +85,C AC MAXIMUM DC RESISTANCE (OHMS) - 5 5 t TO +125-C DC DC AC 100 150 0.003 MAXIMUM VOLTAGE DROP AC DC MINIMUM CAPACITANCE (uF) 0 .045 PART MARKING: MIN. INSERTION LOSS PER M IL-STD -220, FULL LOAD, +25‘ C
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125-C
385C9
--28UNF--
SCI--21
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Untitled
Abstract: No abstract text available
Text: aoo 2 Interface Modules [ e l e c t iM IfM C i F ro n t- e n try VOLUME 1 Interface module D-Sub header mounting carrier fo r D IN 3 5 rail 0 .0 8 t_^ D e sc rip tio n 2.5 m m 2 / AWG 28 - 1 2 5 - 6 m m / 0 .2 2 in No. of "L" Ite m - N o . p o le s m m / in
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Untitled
Abstract: No abstract text available
Text: 4 3 Mo dacuwra^liMho g ry rty^ a fj*mp h «^C cip c«^^ M ?radon ftrdomararfooture or Aoolod ah no a mrightt Stovgranted ta i priort>oonoort C m?ook ayrHt MitInfawwodon thlo rioouwont _ TOLERANCE + / - 0 . 0 3 Customer drawing 4 3 _ 1_
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777TW
L777TWA7WZPUP3SV4R
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOL OGY INC 17E D biiisMT aooiôoa t • ADVANCE RON MT42C4256 883C MILITARY VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • Industry standard pin-out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply
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MT42C4256
100ns
MT42C4064
64Kx4)
28L/400
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Untitled
Abstract: No abstract text available
Text: LO O NOTES : I. < o MATERIAL : HOUSING - NYLON 66 THERMO PLASTIC, 94V-0 TERMINAL - CARTRIDGE BRASS PLATING - PRE-PLATED TIN ALLOY T^7MARK "P8.P91 ON BACKWALL.TO BE AS LARGE AS POSSIBLE T^7THE VOID OPTION IS FOR THE POLARIZATION KEY A. PART NO. LEGEND : 87218 - 0 6 * *
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T1939-014
GC95-039
A96-063
TA94-072
TA93-2I7
SDA-872
A93-020
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Untitled
Abstract: No abstract text available
Text: CML Semiconductor Products s o n r PRODUCT INFORMATION í^ ry c o Q r Aooy = Low-Voltage/High-Speed GMSK Modem Publication D/589/7 January 1998 Features Applications • Full-Duplex Gaussian Minimum Shift Keying GMSK Operating from 3 Volts to 5.5 Volts •
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D/589/7
64kb/s
STD-18
FX589
FX589
FX589DW
FX589D5
FX589P
24-pin
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c 2579 power transistor
Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage
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JEDECTO126
15A3DIN
c 2579 power transistor
TRANSISTOR C 2577
transistor Bc 542
c 2579 transistor
marking EB 202 transistor
transistor bc 564
C 2577 transistor
AE 2576
PM564
Transistors marking WZ
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CMPD2836
Abstract: CMPD2838 marking code ca2 marking code C1 marking code c2 marKing CA2 sot-23
Text: Central” CMPD2836 CMPD2838 Sem iconductor Corp. DUAL SILICON SWITCHING DIODE DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CMPD2836, CMPD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy
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CMPD2836
CMPD2838
OT-23
CMPD2836,
CMPD2838
100hA
100mA
CMPD2836
marking code ca2
marking code C1
marking code c2
marKing CA2 sot-23
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3373J
Abstract: 2151A2
Text: SURFACE MOUNT 3MM SQUARE / SINGLE TURN CERMET / PROCESS SEALED • ■ ■ ■ Compatible with surface mount manufacturing processes Rotor stop for “in-circuit” adjustment 5 cycle rotational and seal life Patent #5043695 assembly for reliable miniature construction
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issbs73
3373J
2151A2
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pm9820 SUMITOMO
Abstract: ELF605F PM-9820 bobbin PM-9820 bobbin SUMITOMO coil wire 2UEW E41404 ELF609F ELF18D615 ELF609 SUMITOMO pm8315
Text: I fi 0 Date of Issue : 2002^4^243 A p r il £ 4 ,2 0 0 2 38 f t K f t Classification: DIG I- K E Y <i*n À New □ Change □ t>j i ± PRODUCT SPECIFICATION FOR INFORMATION s s » . Product Description m on P°P m Product Part Number « T pap # Matsushita Part Number
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ELF18D6DDD
ELF18D6DDD
pm9820 SUMITOMO
ELF605F
PM-9820 bobbin
PM-9820 bobbin SUMITOMO
coil wire 2UEW
E41404
ELF609F
ELF18D615
ELF609
SUMITOMO pm8315
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8088 intel microprocessor pin diagram
Abstract: Motorola 6502 6800 intel microprocessor pin diagram 8048 intel microprocessor pin diagram motorola 6809 8048 micro controller block diagram 6809 MPU EF9369 EF9369-30 tea5114
Text: rZ Z ^ 7 # S C S -T H O M S O N H iI T [M 0 g S 5 E F 9 3 6 9 HMOS2 - SINGLE CHIP COLOR PALETTE • ON CHIP COLOR LOOK-UP TABLE ■ 4096 COLOR PALETTE (16 colors selected from 4096 ■ ON-CHIP THREE 4-BIT RESOLUTION VIDEO DACs WITH y LAW CORRECTION ■ DOT RATE UP to 30 MEGADOTS PER SE
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EF9369
16-BIT
DIP28
PLCC28
E88-EF9369-14
EF9369
8088 intel microprocessor pin diagram
Motorola 6502
6800 intel microprocessor pin diagram
8048 intel microprocessor pin diagram
motorola 6809
8048 micro controller block diagram
6809 MPU
EF9369-30
tea5114
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DF40PC3
Abstract: J532 SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm DF40PC3 o u t lin e 30V 40A F e a tu re • SMD • î • SM D 3 V f = 0 .4 V • U ltra-Low V f=0.4V • High lo R ating-Sm all-R K G M a in U s e • /w x u -æ s B m t • Reverse connect protection for DC pow er source
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DF40PC3
STO-220
I-111,
J532-1
DF40PC3
J532
SHINDENGEN DIODE
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diode marking code I5
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded
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D30L60
150ns
diode marking code I5
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D240SC4M
Abstract: No abstract text available
Text: Schottky Barrier Diode Diode Module •¿m H OUTLINE D240SC4M 40V 240A Feature • High Io Rating-Module-PKG •« V • Low V f f • Small 9 je • 8 jcÖ ^/JV c^L' Main Use • High Power Switching Regulator • DC/DC Converter • Main Frame • IC Tester
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D240SC4M
J533-1
D240SC4M
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