MARKING AOH Search Results

MT8C

Contextual Info: M IC R O N MT8C9026 1MEG x 9 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT (Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C9026 is a randomly accessed solid-state

Contextual Info: M T4C4003J lEG X 4 DRAM M IC R O N 1 MEG DRAM X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View OPTIONS 20-Pin ZIP (DC-1) (DB-2) DQ1 DQ2 WE RAS A9 MARKING • Timing 70ns access 80ns access • Packages Plastic SOJ (300 mil) Plastic ZIP (350 mil)

ST 13004

Contextual Info: SHEET OF~T 91 07 X dim ension PANEL THICKNESS 0,7 5-1,25 [,0 3 0 -,0 4 9 ] L,2 5 -2 ,0 [,0 4 9 -,0 7 9 : 2 .0 -3 .o :.0 7 9 - . i i b : [,7 5 6 ] [,7 6 4 : [.7 8 0 ] 4 .6 0 [.1 B 1 ] ACTUATOR MARKING: NONE ACTUATOR COLOR: GRAY HOUSING COLOR: WHITE r 6.20 [ .2 4 4 ]

Contextual Info: K 0 A K AOHSIUNG 3bE M i * LTTm IL M f t NETWORKS UIEW THICK FFILM S 0 4 b 0 fi5 D T KOA T T ~ (o O .— ~ I I I •3.8m m MAX. HIGH (ULTRA LOW PROFILE 0 5”' DO K O a\ THIN & THICK . • I2R22I/331 J OODDDQ7 K U USERIES L r llL U X W ■ W K t I'Sk DIMENSION (mm)

imo inverter cd 750

Abstract: Capacitor 226 25k 412 024C 064R CR0805 CR1206 CR1210 tv sony ic 1213 Ever Ohms chip resistor 226 20K 340
Contextual Info: ' T A & L E . ' & F ' G Q M V E K V S • Thick Film Chip Resistor - C R Series. 2 ■ Low Ohm Chip Resistor. 5

Contextual Info: FLASH MEMORY CMOS ill — ! M B M 2 9 F 0 0 2 T /0 0 2 B /0 0 2 S T /0 0 2 S B -7 0 -9 0 -1 2 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 16M 2M x8/1M x 16 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 LHF16Vll l Handle this document carefully for it contains material protected by international copyright law.

LH28F160BVHE-BTL90

Abstract: C8000 BTL90 SHARP 20 WZ 51
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 16M 2M x8/1M x 16 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 LHF16Vll l Handle this document carefully for it contains material protected by international copyright law.

LMC7101

Abstract: X9317 X9317ZM8 X9317ZM8I X9317ZM8IZ X9317ZM8Z X9317ZP X9317ZS8 X9317ZS8Z 9317ZI
Contextual Info: X9317 Low Noise, Low Power, 100 Taps Data Sheet September 9, 2005 Digitally Controlled Potentiometer XDCP FN8183.1 Features • Solid-State Potentiometer The Intersil X9317 is a digitally controlled potentiometer (XDCP). The device consists of a resistor array, wiper

Contextual Info: FLASH MEMORY CMOS MBM29 LV400T-10/-12/M BM29 LV400B-10/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-4E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29F040C-55/-70/-90 • FEATURES • • • • • • • • • • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

317T

Abstract: marking AGD X9317 X9317ZM8 X9317ZM8I X9317ZM8IZ X9317ZM8Z X9317ZP X9317ZS8 X9317ZS8Z
Contextual Info: X9317 Low Noise, Low Power, 100 Taps Data Sheet Digitally Controlled Potentiometer XDCP The Intersil X9317 is a digitally controlled potentiometer (XDCP). The device consists of a resistor array, wiper switches, a control section, and nonvolatile memory. The

fujtsu

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-3E FLASH MEMORY 4M 512K X 8 BIT M B M 2 9 F 0 4 0 C - 5 5 / - 7 0 /-9 0 • FEATURES • Single 5.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

317t

Abstract: IC 317T pin diagram ML 317t 317t regulator B 504 Potentiometers X9317 X9317ZM8 X9317ZM8I X9317ZM8IZ X9317ZM8Z
Contextual Info: X9317 Low Noise, Low Power, 100 Taps Data Sheet Digitally Controlled Potentiometer XDCP The Intersil X9317 is a digitally controlled potentiometer (XDCP™). The device consists of a resistor array, wiper switches, a control section, and nonvolatile memory. The

Contextual Info: High Power Resistors HP06 Series Construction 1. High purity alumina substrate 2. Protective covering 3. Resistive covering 4. Termination inner Ag / Pd 5. Termination (between) Ni plating 6. Termination (outer) Sn plating Power Rating and Dimensions Dimensions : Millimetres

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

317t

Abstract: B 504 Potentiometers x9317tp X9317 X9317ZM8 X9317ZM8I X9317ZM8IZ X9317ZM8Z X9317ZP X9317ZS8
Contextual Info: X9317 Low Noise, Low Power, 100 Taps Data Sheet Digitally Controlled Potentiometer XDCP The Intersil X9317 is a digitally controlled potentiometer (XDCP™). The device consists of a resistor array, wiper switches, a control section, and nonvolatile memory. The

317t

Abstract: IC 317T pin diagram M8173 X9317 X9317ZM8 X9317ZM8I X9317ZM8IZ X9317ZM8Z X9317ZP X9317ZS8
Contextual Info: X9317 Low Noise, Low Power, 100 Taps Data Sheet Digitally Controlled Potentiometer XDCP The Intersil X9317 is a digitally controlled potentiometer (XDCP™). The device consists of a resistor array, wiper switches, a control section, and nonvolatile memory. The

Contextual Info: F L m A S H M E M O 1 M x R Y 8 /5 1 2 K x 1 6 yMDbA M A O¿ yQ lL V n n Tl i. .0,1.^/AADlJIOO V /Q oUU 2/ M d » LV 80 BIT Wife, , ,., . • FEA TU RES • Single 3.0 V read, program, and erase

9012 3CH

Abstract: 29LV160
Contextual Info: FLASH MEMORY CMOS 1 6 M 2 M X 8 /1 M m X 1 6 B IT jWklMHW. ÏW' I M 60T-90/-12/MB M B-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands

29F017A

Contextual Info: FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017A-70'-90/-i2 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

marking AVW

Contextual Info: Q R -IM G -10 Revn : Nil Date : 23.05.1997 Aspect Development Inc. DISCLAIMER During the production process, it was found that pages within this section is not numbered sequentially by the manufacturer. Please read page 48 after page 45 and omit the page s 46 & 47. Aspect

29f040c-90

Abstract: 29F040C70 29F040C-70
Contextual Info: FLASH MEMORY CMOS ;. M B M 29 F040C-70/-90 FEATURES Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as EzPROMs Compatible with JEDEC-standard byte-wide pinouts

29LV400BC

Abstract: BC702
Contextual Info: FLASH MEMORY CMOS 4 M 512 K x 8/256K x 16 BIT MBM29LV400TC-70-90-12/MBM29LV400BC-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs