Untitled
Abstract: No abstract text available
Text: KEMET Part Number: C0805N130J1GSH7189 C0805N130J1GSH7189, CDR31BP130BJSS-T&R Capacitor, ceramic, 13 pF, +/-5% Tol, 100V, C0G, 0805 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: 13 pF Chip Size: 0805 Voltage:
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Original
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C0805N130J1GSH7189
C0805N130J1GSH7189,
CDR31BP130BJSS-T
abffa2b1-110c-43ff-b5d9-5e64d85b4c58
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PDF
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Q62702-P1610
Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639
Text: SFH 325 SFH 325 FA fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package 0.7 2.8 2.4 4.2 3.8 2.4 (R1) fplf6867 (1.4) 3.8 3.4 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing (2.85) 1.1
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Original
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fpl06867
fplf6867
OHF01530
IPCE/IPCE25o
OHF01528
OHF01524
Q62702-P1610
Q62702-P1611
Q62702-P1614
Q62702-P1615
Q62702-P1638
Q62702-P1639
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PDF
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foto transistor
Abstract: phototransistor 500-600 nm GEO06391 OHFD1422 Q68000-A7852 LPT 80 A
Text: LPT 80 A NPN-Silizium-Fototransistor Silicon NPN Phototransistor 16.51 16.00 1.52 1.29 1.14 2.54 2.03 Collector 2.34 2.08 0.64 0.46 4.57 4.32 2.54mm spacing 1.52 5.84 5.59 LPT 80 A 1.70 1.45 1.52 Plastic marking R = 0.76 feo06391 0.64 0.46 GEO06391 Approx. weight 0.2 g
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Original
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feo06391
GEO06391
OHF00344
OHF00342
OHF00345
foto transistor
phototransistor 500-600 nm
GEO06391
OHFD1422
Q68000-A7852
LPT 80 A
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PDF
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LPT 80 A
Abstract: GEO06391 OHFD1422 Q68000-A7852 IRL80A LPT IC IRL81a
Text: LPT 80 A NPN-Silizium-Fototransistor Silicon NPN Phototransistor 16.51 16.00 1.52 1.29 1.14 2.54 2.03 Collector 2.34 2.08 0.64 0.46 4.57 4.32 2.54mm spacing 1.52 5.84 5.59 LPT 80 A 1.70 1.45 1.52 Plastic marking R = 0.76 feo06391 0.64 0.46 GEO06391 Approx. weight 0.2 g
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Original
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feo06391
GEO06391
OHF00344
OHF00342
OHF00345
LPT 80 A
GEO06391
OHFD1422
Q68000-A7852
IRL80A
LPT IC
IRL81a
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PDF
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GEO06643
Abstract: GEO06863 Q62702-P1129 Q62702-P463 BPW 34 FAS
Text: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 FA BPW 34 FAS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT Silicon PIN Photodiode with Daylight Filter New: in SMT 0.6 0.4
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Original
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feo06075
feo06861
GEO06643
GEO06863
OHF00080
OHF00081
OHF00082
OHF01402
GEO06643
GEO06863
Q62702-P1129
Q62702-P463
BPW 34 FAS
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PDF
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bpw 104
Abstract: GEO06643 GEO06863 Q62702-P1604 Q62702-P929 bpw+104 BPW34F
Text: 0.8 0.6 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 F BPW 34 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8
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Original
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feo06075
feo06861
GEO06643
GEO06863
OHF00080
OHF00081
OHF00082
OHF01402
bpw 104
GEO06643
GEO06863
Q62702-P1604
Q62702-P929
bpw+104
BPW34F
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PDF
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p945
Abstract: transistor p945 ir p945 p945 transistor GEO06643 Q62702-P945
Text: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 B 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6
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Original
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feo06643
GEO06643
OHF00080
OHF00081
OHF00082
OHF01402
p945
transistor p945
ir p945
p945 transistor
GEO06643
Q62702-P945
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PDF
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GEO06075
Abstract: GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104
Text: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BP 104 F BP 104 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8
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Original
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feo06075
feo06861
GEO06075
GEO06861
OHFD1781
OHF01778
OHF00082
OHF01402
GEO06075
GEO06861
OHFD1781
Q62702-P1646
Q62702-P84
BP104
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PDF
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors 0.3 min 2.1 1.7 1.0 0.9 5.4 5.0 1.7 1.5 2.4 3.4 3.0 0.3 max 3.0 2.6 2.3 2.1 SFH 3211 SFH 3211 FA fpl06899 NPN-Silizium-Fototransistor im SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in SMT TOPLED RG-Package 0.0.1 Cathode/Collector marking
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Original
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fpl06899
fplf6899
GPL06899
103ff.
169ff.
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PDF
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E9087
Abstract: GEO06643 GEO06863 GEO06916 Q62702-P1604 Q62702-P1826 Q62702-P929
Text: feo06075 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 F BPW 34 FS BPW 34 FS E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter
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Original
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feo06075
E9087)
GEO06643
OHF00080
OHF00081
OHF00082
OHF01402
E9087
GEO06643
GEO06863
GEO06916
Q62702-P1604
Q62702-P1826
Q62702-P929
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PDF
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E9087
Abstract: GEO06643 GEO06863 GEO06916 Q62702-P1129 Q62702-P1829 Q62702-P463 BPW 34 FAS
Text: feo06075 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 FA BPW 34 FAS BPW 34 FAS E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter
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Original
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feo06075
E9087)
GEO06643
OHF00080
OHF00081
OHF00082
OHF01402
E9087
GEO06643
GEO06863
GEO06916
Q62702-P1129
Q62702-P1829
Q62702-P463
BPW 34 FAS
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PDF
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GEO06643
Abstract: Q62702-P76
Text: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 33 0.8 0.6 Silizium-Fotodiode Silicon Photodiode 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 . 5˚ Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g
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Original
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feo06643
GEO06643
OHF00073
OHF01065
OHF00075
OHF01402
GEO06643
Q62702-P76
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PDF
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BPW34S
Abstract: E9087 GEO06643 GEO06863 GEO06916 Q62702-P1602 Q62702-P1790 Q62702-P73 S8050
Text: feo06643 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing
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Original
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feo06643
E9087)
GEO06643
OHF00080
OHF00081
OHF00082
OHF01402
BPW34S
E9087
GEO06643
GEO06863
GEO06916
Q62702-P1602
Q62702-P1790
Q62702-P73
S8050
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PDF
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Untitled
Abstract: No abstract text available
Text: SMT Power Inductors SMT-Power-Induktivitäten 11 max. Marking 10.4 ref. 13.1 max. 2.3 ref. SMT power inductors B82559 h • Sizes: 13.1 x 11 x 4.95 mm ■ Baugrößen: 13.1 x 11 x 4.95 (mm) 13.1 x 11 x 5.95 (mm) ■ Core material: ferrite ■ Helically wound
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B82559
FIN0254-V
IND0351-A
IND0398-P
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PDF
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fototransistor led
Abstract: GPL06965
Text: SMT Multi TOPLED SFH 7221 Vorläufige Daten / Preliminary Data 3.0 2.6 2.3 2.1 0.9 0.7 3 C A E 0.1 typ 1.1 0.5 3.4 3.0 C 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking 0.6 0.4 GPL06965 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Original
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GPL06965
IPCE/IPCE25o
OHF00871
OHF01530
OHF00312
fototransistor led
GPL06965
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PDF
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fototransistor led
Abstract: GPL06965
Text: SMT Multi TOPLED SFH 7221 Vorläufige Daten / Preliminary Data 3.0 2.6 2.3 2.1 0.9 0.7 3 C A E 0.1 typ 1.1 0.5 3.4 3.0 C 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking 0.6 0.4 GPL06965 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Original
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GPL06965
IPCE/IPCE25o
OHF00871
OHF01530
OHF00312
fototransistor led
GPL06965
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PDF
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c 331 transistor
Abstract: transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331
Text: SMT Multi TOPLED SFH 331 3.0 2.6 2.3 2.1 0.9 0.7 3 C C E 0.1 typ 1.1 0.5 3.4 3.0 A 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking Emission color : super-red 0.6 0.4 GPL06924 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Original
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GPL06924
Q62702-P1634
IPCE/IPCE25o
OHF00871
OHF01530
OHF01924
c 331 transistor
transistor d 331
331 transistor
fototransistor led
phototransistor 650 nm
d 331 TRANSISTOR equivalent
GPL06924
Q62702-P1634
switching transistor 331
transistor C 331
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PDF
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing ' Photosensitive area 2.65 mm X 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
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OCR Scan
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GE006643
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PDF
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bpw filter
Abstract: 34FAS BPW 34 FAS
Text: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT Silicon PIN Photodiode with Daylight Filter New: in SMT BPW 34 FA BPW 34 FAS LO r*- o to o o 0 Cathode marking ,4.0, spacing Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GE006643
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OCR Scan
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GE006643
GE006863
bpw filter
34FAS
BPW 34 FAS
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PDF
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151S5
Abstract: No abstract text available
Text: ERC05 1 .2A - * ’ Outline Drawings _ GENERAL USE R EC TIFIER DIODE ! Features • If— Hi gh surge current • Sift fl 14 • S tf I Marking High reliability : Applications A 7 - 3 - K : fi Color code : Orange • V X S tifc General purpose rectifier applications
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OCR Scan
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ERC05
l95t/R89
151S5
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing Photosensitive area 2.65 mm X 2.65 mm CO Approx. weight 0.1 O CO GE006643 o o 0 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
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OCR Scan
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GE006643
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PDF
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Q62702-P945
Abstract: No abstract text available
Text: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking 4.0 o o^r J 1r f ^ 1 -Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
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OCR Scan
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geoo6643
OHFOOQ82
Q62702-P945
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotodiode Silicon Photodiode BPW 33 Cathode marking 4.0 Chip position CO o o LO co co 1 4a i mm spacing -Photosensitive area 2.65 mm x 2.65 mm CO Approx. weight 0.1 O C O o o 0 GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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OCR Scan
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GE006643
BPW33
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PDF
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