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    LPT 80 A

    Abstract: GEO06391 OHFD1422 Q68000-A7852 IRL80A LPT IC IRL81a
    Text: LPT 80 A NPN-Silizium-Fototransistor Silicon NPN Phototransistor 16.51 16.00 1.52 1.29 1.14 2.54 2.03 Collector 2.34 2.08 0.64 0.46 4.57 4.32 2.54mm spacing 1.52 5.84 5.59 LPT 80 A 1.70 1.45 1.52 Plastic marking R = 0.76 feo06391 0.64 0.46 GEO06391 Approx. weight 0.2 g


    Original     		PDF feo06391 GEO06391 OHF00344 OHF00342 OHF00345 LPT 80 A GEO06391 OHFD1422 Q68000-A7852 IRL80A LPT IC IRL81a

    foto transistor

    Abstract: phototransistor 500-600 nm GEO06391 OHFD1422 Q68000-A7852 LPT 80 A
    Text: LPT 80 A NPN-Silizium-Fototransistor Silicon NPN Phototransistor 16.51 16.00 1.52 1.29 1.14 2.54 2.03 Collector 2.34 2.08 0.64 0.46 4.57 4.32 2.54mm spacing 1.52 5.84 5.59 LPT 80 A 1.70 1.45 1.52 Plastic marking R = 0.76 feo06391 0.64 0.46 GEO06391 Approx. weight 0.2 g


    Original     		PDF feo06391 GEO06391 OHF00344 OHF00342 OHF00345 foto transistor phototransistor 500-600 nm GEO06391 OHFD1422 Q68000-A7852 LPT 80 A

    GEO06391

    Abstract: OHFD1422 Q68000-A7852 IRL81
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 470 nm bis 1080 nm • Sidelooker im Kunststoffgehäuse • Hohe Empfindlichkeit • Passend zu IRED IRL 80 A, IRL 81 A


    Original     		PDF Q68000-A7852 OHF00345 GEO06391 GEO06391 OHFD1422 Q68000-A7852 IRL81