MARKING 51A Search Results

PH 33D

Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614

chip resistor marking

Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Contextual Info: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

NATIONAL SEMICONDUCTOR MARKING CODE sot

Abstract: national marking code P9506AB national marking code 8 soic NATIONAL SEMICONDUCTOR MARKING CODE S9506AB M51AB On semiconductor date Code national marking date code M9506AB
Contextual Info: Page 1 of 4 QA/Product Engineering Europe COMPONENT COMPONENTMARKING MARKING Components are marked - on front side - full name or coded - one or more lines M9506AB LM2901N First Line of Marking Examples: Standard NS U M51AB LM2901M S9506AB SM9448AH Z XX YY TT

Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF

hc4851a

Abstract: HP4155C 51A SOIC hc4051 948F MC14051B sensor microcontroller Analog devices marking Information PACKAGE SOIC_ HCT4851AG
Contextual Info: MC74HCT4851A Analog Multiplexers/ Demultiplexers with Injection Current Effect Control with LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS Automotive Customized This device is pin compatible to standard HC4051 and MC14051B analog mux/demux devices, but feature injection current effect

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

5.0smdj

Contextual Info: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power 5.0SMDJ DEVICE MARKING CODE PART NUMBER Uni-polar Bi-polar REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE CLAMPING PULSE LEAKAGE

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

5bge

Abstract: 5bgm 33cA 5BFz
Contextual Info: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power DEVICE MARKING CODE 5.0SMDJ PART NUMBER 5.0SMDJ 20A Uni-polar Bi-polar REVERSE BREAKDO BREAKDO MAXIMUM REVERSE PEAK WN WN STANDTEST CLAMPING LEAKAGE

Contextual Info: 5.0SMDJ 5000W Series 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 11 TO 170 Volts 5000Watts Peak Pulse Power " * " 标注为常用型号 " * " Stand for commonly used models 5.0SMDJ DEVICE MARKING CODE PART NUMBER Uni-polar Bi-polar

5.0smdj

Abstract: 5pfm 5PFE
Contextual Info: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power 5.0SMDJ PART NUMBER DEVICE MARKING REVERSE BREAKDOWN BREAKDOWN TEST VOLTAGE VOLTAGE STAND- OFF CODE CURRENT IT VBR V VBR(V) VOLTAGE (mA) VRWM(V)

4435a

Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V

Contextual Info: LESHAN RADIO COMPANY, LTD. HFM101 – HFM108 1A 1A HIGH EFFICIENCY SMA DIODES TYPE Marking HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 HF1 HF2 HF3 HF4 HF5 HF6 HF7 HF8 50 100 200 300 400 600 800 1000 V F V IF (A) VRRM(V) 1.00 1.00 1.00 1.30 1.30

Contextual Info: LESHAN RADIO COMPANY, LTD. HFM101 – HFM106 1A 1A HIGH EFFICIENCY SMA DIODES TYPE Marking HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 HF1 HF2 HF3 HF4 HF5 HF6 HF7 HF8 50 100 200 300 400 600 800 1000 V F V IF (A) VRRM(V) 1.00 1.00 1.00 1.30 1.30

OV07251

Abstract: Buss M151 varistor buss M200-EX M461 M581-DG M251-CU M400D M151-EF M102D
Contextual Info: Metal Oxide Varistors Bussmann 05 S e rie s to 25 S e rie s - Through Hole M O V’s Maximum Transient Pow er D issipation Ratings Pm Series Pm-watts 0.15 0.25 0.3 0.4 0.45 0.5 05 07 08 10 11 12 Series Pm-watts 0.6 0.6 0.8 1.0 1.2 14 16 18 20 25 Standard Marking:

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

Contextual Info: Advanced Power Electronics Corp. AP0904GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-Resistance R DS ON Fast Switching Characteristics G RoHS-compliant, halogen-free 40V 10mΩ ID 51A S Description D (tab) G Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V

pn2222

Abstract: pn2907 NSDU01 2N4125 TN2219 "device marking" BC213 BC214 MPSW01A MPSW51A
Contextual Info: VCEO smt (Volts) Min 30 Devices PNP Nf>N M PSW 01A M PSW 51A NSDU01 if t iiliilS l: ; . ' •" . • ••• fr@ l h f j O lc •c (m A) Max mA (MHz) NF Package P D(ftnfe) (<nW) Max Min 1000 50 1000 50 50 TO-226 1000 1000 60 100 50 50 T0-202(55) 1333 Min

51a marking

Abstract: FDP51N25
Contextual Info: UniFET TM FDP51N25 250V N-Channel MOSFET Features Description • 51A, 250V, RDS on = 0.060Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)

Contextual Info: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V

51a marking

Abstract: FDP51N25 FDPF51N25
Contextual Info: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V