KIA7039AP
Abstract: 39AP 7039ap transistor KIA-70 KIA70
Text: SEMICONDUCTOR KIA7039AP MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KIA 70 39AP 816 No. Item 1 Trade Name Marking Description KEC Analog Integrated Circuit KIA 2 70 Series Name 39AP Device Name KIA7039AP Device Name 3 4 98.06.23
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KIA7039AP
KIA7039AP
39AP
7039ap
transistor KIA-70
KIA70
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chip resistor marking
Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Text: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm
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NRC06FxxxxTR
NRC06F10R0TR
NRC06F10R2TR
NRC06F10R5TR
NRC06F10R7TR
NRC06F11R0TR
NRC06F11R3TR
NRC06F11R5TR
NRC06F11R8TR
NRC06F12R1TR
chip resistor marking
604K-Ohm
marking 53d
marking 34x
NRC06F1273TR
511K-Ohm
NRC06F21R0TR
NRC06F20R5TR
NRC06F2000TR
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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Untitled
Abstract: No abstract text available
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)
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Untitled
Abstract: No abstract text available
Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 400 Watt Peak Power ■ Dimension Dim SMA DO-214AC ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 3.99 4.50 0.157 0.177 B 2.54 2.79 0.100
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DO-214AC)
250CA
300CA
350CA
400CA
440CA
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Untitled
Abstract: No abstract text available
Text: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BA XX
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Si5441DC
S-62426--Rev.
04-Oct-99
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D 71055
Abstract: Si5441DC MAX 71055 71055
Text: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX
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Si5441DC
S-62426--Rev.
04-Oct-99
D 71055
MAX 71055
71055
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Untitled
Abstract: No abstract text available
Text: DMN3010LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Green Product Summary V BR DSS RDS(ON) 30V 9.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V Features ID TC = +25°C 43A 39A density end products This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN3010LK3
AEC-Q101
DS36762
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Untitled
Abstract: No abstract text available
Text: DMN4010LK3 Green Product Summary Features RDS ON max ID max TC = +25°C • • Low Input Capacitance 11.5mΩ @ VGS = 10V 39A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 14.5mΩ @ VGS = 4.5V 35A • Halogen and Antimony Free. “Green” Device (Note 3)
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DMN4010LK3
AEC-Q101
DS36743
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Untitled
Abstract: No abstract text available
Text: FDMS3662 N-Channel Power Trench MOSFET 100V, 39A, 14.8mΩ Features General Description Max rDS on = 14.8mΩ at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3662
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Untitled
Abstract: No abstract text available
Text: HUF76633S3ST_F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 39A, 35mΩ D D Features Typ rDS on = 28mΩ at VGS = 10V, ID = 39A Typ Qg(tot) = 56nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263AB
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HUF76633S3ST
O-263AB
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2C66
Abstract: ML marking t41l 1c51 MAXIM COUNTRY OF ORIGIN 3F61 19L4W 0532G
Text: MIL+-195CU/139B ● SUPE3SED1NG KH,-3-195C@39A 31 M1LIT4RI W% TRAJISISMR, TYPE This the tnr, Ar!Jv. 1. SCOPE 1.1 w. trar,ai. for me 1.3 Absoluta-mximm 1.4 Prim.n for .,. W the Nwv. in chaPPer PNP, SILICON JAN-2N1119 k.=” . mmr.awd k and 1s mda- the and
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-195CU/139B
-3-195C
JAN-2N1119
Re1iabi11t7
Aforceof80z.
4Ths-19500/139B
30nsec)
2C66
ML marking
t41l
1c51
MAXIM COUNTRY OF ORIGIN
3F61
19L4W
0532G
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HEXFET D2PAK
Abstract: D2Pak Package dimensions diode marking code 421
Text: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com
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IRL3302SPbF
EIA-418.
HEXFET D2PAK
D2Pak Package dimensions
diode marking code 421
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Untitled
Abstract: No abstract text available
Text: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com
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IRL3302SPbF
EIA-418.
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FDPF39N20
Abstract: 200v mosfet FDP39N20
Text: TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP39N20
FDPF39N20
FDPF39N20
200v mosfet
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Untitled
Abstract: No abstract text available
Text: TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP39N20
FDPF39N20
FDPF39N20
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ZP33A
Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Text: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=
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OCR Scan
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00-4KQ
DO-34
RB441Q
RB721Q
DO-340USD]
RB100A
T0220FP
RB015T-40
R8026T-40
1N4146
ZP33A
TZP33A
zp 33a
1n9638
zp 278
1N52438
TZP10A
MTZJ 188
MTZJ 248
1N6233
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39CA
Abstract: DN 6V8A 6v8a 6v8ca transil sm6t 6V8C 39CA 144 33cA SM6T 68CA SM6T15 DW
Text: rzj SURFACE MOUNT DEVICES SGS-THOMSON iiiQ gK iiLi(gra©R!io©i GENERAL PURPOSE & INDUSTRIAL TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Marking Type *RM @ VRM @ V(BR * (V) V(CL) @ Ipp 1 ms expo •r max Unidirec tional 600 W / Bidirec tional Unidirec
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OCR Scan
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100CA
150CA
200CA
39CA
DN 6V8A
6v8a
6v8ca
transil sm6t
6V8C
39CA 144
33cA
SM6T 68CA
SM6T15 DW
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39ca
Abstract: 6V8C 6v8ca sm4t 6V8A 415 6V8 33CA 39CA 144 transil marking VX 15CA
Text: rZ 7 SGS-THOMSON ^ 7# SURFACE MOUNT DEVICES H O C M ilU t g « ! GENERAL PURPOSE & INDUSTRIAL SOD 6 /SOD 15 SOD 6 SOD 15 TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Marking Type •RM VRNI @ V BR * (V) V(CL) Ipp 1 ms expo <R max Unidirec tional 400 W
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OCR Scan
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SM4T10
100CA
150CA
200CA
39ca
6V8C
6v8ca
sm4t
6V8A
415 6V8
33CA
39CA 144
transil marking VX
15CA
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TZP27B
Abstract: TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139
Text: Part Marking <Switching D io d e s <Rectifier D io d e s) DO-35 GSD) DO-34<MSO) u§p Part No. M arking Part No. M arking P art No. M arking P art No. White 1S S130 White 1S2471 Black 1SS131 Black 1 S S 252 Black 1S 2472 Green 1S S132 Green 1S S253 Green 1S 24 73
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OCR Scan
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DO-35
1SS41
DO-34
1S2471
1SS131
B100A
TZP27B
TZP33A
tzp 33a
zp 33a
TZP10A
zener 1n 4148
957B
R 958B
zener 56c
marking CODE S139
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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OCR Scan
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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