schiele
Abstract: Luranyl 2402 L99-799-XXE rosenberger assembly mini 23S103-270L3 32S10 32S102-270L5 23Z121-007
Text: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-799-XXE Marking 1A 1B 2A
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L99-799-XXE
L99-799-20E
L99-799-30E
L99-799-65E
D-84526
12-s201
schiele
Luranyl 2402
L99-799-XXE
rosenberger assembly mini
23S103-270L3
32S10
32S102-270L5
23Z121-007
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L99-816-XXE
Abstract: jack rtk 6.35 jack
Text: TECHNICAL DATA SHEET CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-816-XXE Marking All dimensions are in mm; tolerances according to ISO 2768 c-H RF_35/11.05/3.1 Available variants Type Channels A mm Insertion loss ≤ (dB) at 20 GHz Weight (g) / pce
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L99-816-XXE
L99-816-15E
L99-816-20E
L99-816-30E
L99-816-55E
D-84526
12-s380
L99-816-XXE
jack rtk
6.35 jack
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-816-XXD Marking B All dimensions are in mm; tolerances according to ISO 2768 c-H
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L99-816-XXD
L99-816-07D
L99-816-10D
L99-816-20D
L99-816-30D
L99-816-40D
13-s267
D-84526
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ROSENBERGER
Abstract: 23k1
Text: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-816-XXD Marking B All dimensions are in mm; tolerances according to ISO 2768 c-H
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L99-816-XXD
L99-816-07D
L99-816-10D
L99-816-20D
L99-816-30D
D-84526
ROSENBERGER
23k1
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Untitled
Abstract: No abstract text available
Text: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS
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T4C16256/7/8/9
T4C16257/9
T4C16258/9
512-cycle
500mW
40-Pin
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Untitled
Abstract: No abstract text available
Text: PAGE NBR 1 PACKAGING PROCESS SHEET STANDARD PACKAGING PROCESS FOR CATALOG NBR 1434072-1 00 CURRENT UM PC ORG CODE 0K00 PROD CDE M136 SUPPLIER MFG DATE 10/24/01 COUNTRY CODE MX TRADEMARK NM FLEXSTRIP STANDARD QUANTITY 1000 DESCRIPTION STANDARD LEVEL 200 PRODUCT DESC FSN-23Z-6
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FSN-23Z-6
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23Z6
Abstract: 23Z2 MARKING WL JESD22-A113 JESD51-7 LP2985 LP3985 SC74 0.47 uf capacitor
Text: DA9123.007 3 May 2004 MAS9123 80 mA LDO Voltage Regulator IC • • • • Very Low Noise: 9.5 µVrms Very Short Start-up Time: 20 µs Excellent Ripple Rejection: 68 dB Stable with Low-ESR Output Capacitors • Low Minimum Output Capacitance Requirement: 0.23 µF
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DA9123
MAS9123
MAS9123
23Z6
23Z2
MARKING WL
JESD22-A113
JESD51-7
LP2985
LP3985
SC74
0.47 uf capacitor
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523AX
Abstract: 23Z6
Text: DA9123.007 3 May 2004 MAS9123 80 mA LDO Voltage Regulator IC • • • • Very Low Noise: 9.5 µVrms Very Short Start-up Time: 20 µs Excellent Ripple Rejection: 68 dB Stable with Low-ESR Output Capacitors • Low Minimum Output Capacitance Requirement: 0.23 µF
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DA9123
MAS9123
MAS9123
523AX
23Z6
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Untitled
Abstract: No abstract text available
Text: SSM3K335R MOSFETs Silicon N-Channel MOS U-MOS-H SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
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SSM3K335R
OT-23F
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ssm3j331
Abstract: No abstract text available
Text: SSM3J331R MOSFETs Silicon P-Channel MOS U-MOS SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)
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SSM3J331R
OT-23F
ssm3j331
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SSM3K335R
Abstract: No abstract text available
Text: SSM3K335R MOSFETs Silicon N-Channel MOS U-MOS-H SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
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SSM3K335R
OT-23F
20itation,
SSM3K335R
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ssm3j331
Abstract: SSM3J331R
Text: SSM3J331R MOSFETs Silicon P-Channel MOS U-MOS SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)
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SSM3J331R
OT-23F
ssm3j331
SSM3J331R
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Untitled
Abstract: No abstract text available
Text: SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)
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SSM3K336R
OT-23F
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Untitled
Abstract: No abstract text available
Text: SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)
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SSM3K336R
OT-23F
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Untitled
Abstract: No abstract text available
Text: SSM3K335R MOSFETs Silicon N-Channel MOS U-MOS-H SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
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SSM3K335R
OT-23F
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Untitled
Abstract: No abstract text available
Text: SSM3J331R MOSFETs Silicon P-Channel MOS U-MOS SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)
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SSM3J331R
OT-23F
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Untitled
Abstract: No abstract text available
Text: SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)
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SSM3K336R
OT-23F
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG 1A 1B 2A 2B 3A 3B L99-799-XXG
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L99-799-XXG
L99-799-20G
L99-799-30G
D-84526
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Untitled
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION - 5 6 .N /A 4 3 2 . LOC ALL RIGHTS RESERVED. COPYRIGHT N /A DF By - 2 1 2 3 D IS T REVISIONS AO LTR D E SC RIPTIO N REVISED R.100 + .003 PER DATE 06FE B2013 E C O - 13 - 0 0 2 0 5 5 APVD
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B2013
062CO
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PDF
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Untitled
Abstract: No abstract text available
Text: R E V IS IO N S 1 9 5 5 B y A M P IN C O R P O R A T E D . A L L R IG H T S RESERVED. A M P P R O D U C TS C O V E R E D B Y P A T E N T S A N D /O R P A T E N T S P E N D IN G , LTR ZONE - - • ' A BODY REÜI5^S¥tTteDDEP:Z£^ÆPX^T-^?3 D E S C R IP T IO N
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Untitled
Abstract: No abstract text available
Text: OPERATING TEMPERATURE RANGE RATING 2010 / 01/12 08:05:35 c a r o l. tr ib b le A P P L IC A 3LE S T A N D A R D STORAGE TEMPERATURE RANGE APPLICABLE CONNECTOR -35°C TO +85°C NOTES 1 VOLTAGE 30V AC CURRENT 0. 3A -10°C TO +60°C BM10* (0. 8) —16DS—0. 4V (*)
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-16DS-0.
100mQ
EDC3-319210-75
BM10BC0.
-16DP-0.
4VC75)
CL684-6047-0-75
hcoo11-5-7
BM10B
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marking 23z
Abstract: SGA-2386z AN-075 SGA-2386
Text: Product Description The SGA-2386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities
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SGA-2386
SGA-2386Z
SGA-2386
AN-075
EDS-100627
marking 23z
SGA-2386z
AN-075
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Untitled
Abstract: No abstract text available
Text: SGA-2363 Product Description The SGA-2363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities
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SGA-2363
SGA-2363
SGA-2363Z
DC-5000
AN-075
EDS-100628
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Untitled
Abstract: No abstract text available
Text: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R Power Management Switch Applications High-Speed Switching Applications Unit: mm +0.08 4.5V drive • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) 0.05
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