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    23K1 Search Results

    23K1 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    10156202-123K110LF Amphenol Communications Solutions PCI Express®x16 vertical Card Edge Connector, 164 Positions, 1mm (0.039inch) Pitch Visit Amphenol Communications Solutions
    RJE4518823K1 Amphenol Communications Solutions Modular Jack - 8P8C, Vertical, Cat6, THT, No Panel Stops, Single Port, Shield No EMI Tabs, With LEDs Visit Amphenol Communications Solutions
    RJE4518823K1T Amphenol Communications Solutions Modular Jack - 8P8C, Vertical, Cat6, THR, No Panel Stops, Single Port, Shield With No Tabs, With LEDs Visit Amphenol Communications Solutions
    RJE4A18823K1T Amphenol Communications Solutions Modular Jack - 8P8C, Vertical, Cat6A, THR, No Panel Stops, Single Port, Shield No EMI Tabs, With LEDs Visit Amphenol Communications Solutions
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    23K1 Price and Stock

    Vishay Beyschlag K223K15X7RF5TH5

    CAP CER 0.022UF 50V X7R RADIAL
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    Vishay Beyschlag K223K15X7RH53L2

    CAP CER 0.022UF 100V X7R RADIAL
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    KEMET Corporation C0805C223K1RACAUTO

    CAP CER 0.022UF 100V X7R 0805
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    DigiKey C0805C223K1RACAUTO Cut Tape 10,319 1
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    Cal-Chip Electronics GMC02X5R223K10NT

    CAP0201 X5R .022UF 10% 10V
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    DigiKey GMC02X5R223K10NT Digi-Reel 10,000 1
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    Vishay Dale TNPW04023K16BEED

    RES 3.16K OHM 0.1% 0.13W 0402
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    DigiKey TNPW04023K16BEED Reel 10,000 10,000
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    Find more 23K1 price and stock on Findchips.com

    23K1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    23K15A-010E4 Rosenberger North America Connectors, Interconnects - Coaxial Connectors (RF) - Contacts - TERMINATOR MINI COAX JACK Original PDF

    23K1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    23k101

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET Mini-Coax 23K101-102H3 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Documents Assembly instruction 23 A Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body Clip Dielectric


    Original     		PDF 23K101-102H3 D-84526 23k101

    RG179

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET Mini-Coax STRAIGHT JACK FOR 75 Ω CABLE 23K171-102H3 All dimensions are in mm; tolerances according to ISO 2768 m-H Documents Assembly instruction 23 A Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact


    Original     		PDF 23K171-102H3 D-84526 RG179

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET Mini-Coax STRAIGHT JACK MINI POWER 23K101-210L All dimensions are in mm; tolerances according to ISO 2768 m-H Documents N/A Material and plating RF_35/12.04/3.0 Connector parts Connector body Clip Material Plating Brass AuroDur , gold plated


    Original     		PDF 23K101-210L D-84526

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET Mini-Coax STRAIGHT JACK MINI POWER 23K101-210H All dimensions are in mm; tolerances according to ISO 2768 m-H Documents N/A Material and plating RF_35/12.04/3.0 Connector parts Connector body Clip Material Plating Brass Gold, min. 1.27 µm, over chemical nickel


    Original     		PDF 23K101-210H D-84526

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET Mini-Coax 23K101-101H3 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Documents Assembly instruction 23 A Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body Clip Dielectric


    Original     		PDF 23K101-101H3 D-84526

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-815-XXF All dimensions are in mm; tolerances according to ISO 2768 c-H


    Original     		PDF L99-815-XXF L99-815-30F D-84526

    schiele

    Abstract: Luranyl 2402 L99-799-XXE rosenberger assembly mini 23S103-270L3 32S10 32S102-270L5 23Z121-007
    Text: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-799-XXE Marking 1A 1B 2A


    Original     		PDF L99-799-XXE L99-799-20E L99-799-30E L99-799-65E D-84526 12-s201 schiele Luranyl 2402 L99-799-XXE rosenberger assembly mini 23S103-270L3 32S10 32S102-270L5 23Z121-007

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-816-XXE All dimensions are in mm; tolerances according to ISO 2768 c-H RF_35/11.05/3.1 Available variants Type Channels A mm Insertion loss ≤ (dB) at 20 GHz Weight (g) / pce L99-816-15E


    Original     		PDF L99-816-XXE L99-816-15E L99-816-20E L99-816-30E L99-816-55E L99-816-100E D-84526 13-s209

    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


    Original     		PDF

    S8836B

    Abstract: No abstract text available
    Text: TOSHIBA S8836B MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 29.5 dBm at f = 8 GHz • High gain - G1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8836B S8836B

    S8851

    Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba control code
    Text: TOSHIBA S8851 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8851 15GHz S8851 TOSHIBA MICROWAVE AMPLIFIER toshiba control code

    S8850A

    Abstract: S8850 S-8850
    Text: TOSHIBA S8850A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8850A S8850A S8850 S-8850

    TGI8596-50

    Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
    Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4


    Original     		PDF MSE-2008 MSE-2009 TGI8596-50 TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - P idB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8836B at260 S8836B 226mA 10GHz

    S8853

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8853 TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 2 8 dBm at f = 15 GHz HIGH GAIN G1dB = 7 dB at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8853 S8853

    S8850A

    Abstract: S8850 Microwave Semiconductor s88
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8850A TECHNICAL DATA FEATURES: • HIGH POWER P^cjB = 21.5dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 9 . ° dB at f = 15 GHz ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8850A S885QA S8850A S8850 Microwave Semiconductor s88

    Untitled

    Abstract: No abstract text available
    Text: —/ l y U / l H HARRIS I— ll\/l 7ß1fi SEMICONDUCTOR P R O D U C T S D IV I S I O N I A DIVISION OF HARRIS CORPORATION IV I I W I W 2K X 8 P R O M Pinout Features TOP V I E W - D I P 80ns M A X IM U M A D D R E S S ACCESS T IM E —v ^ — "T H R E E S T A T E " O U TP U TS A N D A C H IP E N A B L E IN P U T


    OCR Scan     		PDF

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8850A Power GaAs FETs Chip Form Features • High power - pidB = 21.5 dBm a tf = 15 GHz • High gain - G-^g = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8850A 222D1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8851

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8853 Power GaAs FETs Chip Form Features • High power - P idB = 28 dBm at f = 15 GHz • High gain - G 1dB = 7 d B at f = 1 5 G H z • Suitable for Ku-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8853 15GHz S8853

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - P idB = 24 dBm a t f = 15 GHz • High gain - G 1dB = 8 dB a t f = 1 5 G H z • Suitable for Ku-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8851 15GHz S8851

    2SJ106

    Abstract: No abstract text available
    Text: SILICON P CHANNEL JUNCTION TYPE 2SJ106 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm ANALOG SWITCH APPLICATIONS. + CL5 CONSTANT CURRENT APPLICATIONS. IMPEDANCE CONVERTER APPLICATIONS. . High Breakdown Voltage : Vg d S= 50V Min. . High Input Impedance


    OCR Scan     		PDF 2SJ106 SC-59 2SJ106