MARKING 1HC Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

sot-23 Marking 1Hc

Abstract: SOT-23 1HC
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series 3 FEATURE ƽHigh current capacity in compact package. IC =1.2A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

sot-23 Marking 1Hc

Abstract: 1HC SOT23 L8050HPLT1 L8050HPLT1G L8050HQLT1 L8050HQLT1G L8550H marking 1Hc
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050H*LT1 FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.2A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

sot-23 Marking 1Hc

Abstract: L8050HRLT1G L8050 L8050HPLT1G L8050HQLT1G L8050HSLT1G L8050HRLT1 marking 1Hc L8050HQLTIG
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series 3 FEATURE ƽHigh current capacity in compact package. IC =1.5 A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

L8050HPLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. L8050HQLTIG Series S-L8050HQLTIG Series General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. 3 ƽEpitaxial planar type. ƽNPN complement: L8050H ƽPb-Free Package is available. 1

L8050HQLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series S-L8050HQLTIG Series FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar type. 3 ƽNPN complement: L8050H ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site

L8050HRLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series S-L8050HQLTIG Series FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar type. 3 ƽNPN complement: L8050H ƽPb-Free Package is available. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site

clarostat a47-5000-s

Abstract: A47-10K-S A47-10K-V clarostat swe A47-500-S clarostat potentiometers 20 AE-20A A47-500K-S A47-2000-S A47-250K-S
Contextual Info: Series 470 and A47 Panel Mount 0.5 Watt, Thick-Film, Conductive-Plastic P otentiom eterer Series 470 and A47 Electrical Specifications Resistance Range 150i2 to 5 Megohms linear; 1KQ to 2.5 Megohms tapered. Resistance Tolerance Linear up to 500KQ, ±10%; above 500KQ, ±20%.

sot-23 Marking 1Hc

Abstract: SOT-23 1HC
Contextual Info: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/2 0.15 u 0.15 u 27-Jul-2012 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

3195A

Abstract: qml38535 qml-38535
Contextual Info: REVISIONS LTR APPROVED DATE YR-MO-DA DESCRIPTION REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS 18 19 20 21 22 23 24 25 REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLT1 3 1 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun VCEO VCBO VEBO IC Max Unit 25 40 5 1500 SOT–23 V V V

military part marking symbols triangle

Abstract: marking m2i Q020G qml38535 L3T SMD MARKING qml-38535 1/transistor st 9514
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS 18 19 20 STANDARD M ICROCIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 22 23 24 25 26 1 2

est 0114

Abstract: transistor marking bh ra
Contextual Info: TO SHIBA 2SK2543 TOSHIBA FIELD EFFECT TRANSISTOR WÊÊF SILICON N CHANNEL MOS TYPE tt-M OSV • m. HT W ÊT HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR APPLICATIONS • Low Drain-Source ON Resistance

Contextual Info: PRELIMINARY M IC R O N I MT8LS25632 256K X 32 SRAM MODULE SeUiCONDuL'OK INC SRAM MODULE 256K x 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ± 0.3V power supply

L484 IC

Abstract: L484
Contextual Info: * SY10L484-7/8/10 SY100L484-7/8/10 SY101 L484-7/8/10 LOW-POWER 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 7/8/1 Ons max. tA c : The S ynergy S Y 1 0L/1 00L /101 L48 4 are 16384-bit R andom

Contextual Info: 12345676893ABC 123456789ABCA2DE7FC44A97 PL565-68 VCXO PRODUCT DESCRIPTION FEATURES 12 14 VDDOSC 15 L2X 16 GNDBUF Q 10 9 P565-68 1 2 3 4 XIN OESEL 11 VCON 13 OSCOFF SEL GNDOSC VDDANA QBAR

Contextual Info: 12345676893ABC 123456789ABCA2DE7FC44A97 PL560/565-08 VCXO Family PRODUCT DESCRIPTION FEATURES 12 14 VDDOSC 15 L2X 16 Q P560/5-08 1 2 • >8#2+C34./480AC7/52635609268C8AC C • <83/2C34./480AC37C$D#DFFC1:7CC

Contextual Info: M I CR ON T E C H N O L O G Y INC 3ñE D I b l U S H 1! Q Q 0 3 Q 4 2 0 • NRN ADVANCE % ’ * ^ "^ M »M IA i 5 3 ^ ílí« 1 ii T - '/ C - l S ' 5 1 2 x 9 F IF O F IF O FEATURES • • • • • • • • • • « PIN ASSIGNMENT Top View 28L DIP

Contextual Info: PRELIMINARY DATA SHEET JEC CMOS INTEGRATED CIRCUIT juPD42S17405L, 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /1PD42S17405L, 4217405L are 4 194 304 words by 4 bits CMOS dynamic RAMs with optional hyper page

Contextual Info: 4 MEG X 4 FPM DRAM MICRON I TECHNOLOGY. INC. MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-perform ance, low pow er CMOS silicon-gate process • Single pow er supply +3.3V +0.3V or +5V +10%

Contextual Info: PRELIMINARY 64K SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply