7 segment E10501
Abstract: a1009 digital clock with 7segment STK 412 150 M STK 412 240 STK 437 ti ae008 CC78K0 CC78K0S RA78K0
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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U17246EJ2V0UM
7 segment E10501
a1009
digital clock with 7segment
STK 412 150 M
STK 412 240
STK 437
ti ae008
CC78K0
CC78K0S
RA78K0
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a1009
Abstract: diagram of LED matrix display E10501 digital clock with 7segment FF105 CC78K0 CC78K0S RA78K0 RA78K0S SM78K
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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7 segment E10501
Abstract: a1009 diagram of LED matrix display digital clock with 7segment Bar Display Driver LED DIODE F4005 STK 412 tektronix 463 Tektronix 464 ti ae008
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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e10501
Abstract: 7 segment E10501 A1015 ice debug tool 78k0 data sheet 7segment LED digital clock with 7segment DIODE F4005 F4007 diode 7 segment LED display project sm-4 sharp
Text: User’s Manual SM+ System Simulator Operation Target Device SM+ for V850 Ver. 2.00 SM+ for 78K0 Ver. 1.01 SM+ for 78K0S Ver. 1.01 Document No. U17246EJ2V0UM00 2nd edition Date Published November 2004 CP(K) NEC Electronics Corporation 2004 Printed in Japan
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78K0S
U17246EJ2V0UM00
U17246EJ2V0UM
e10501
7 segment E10501
A1015
ice debug tool 78k0
data sheet 7segment LED
digital clock with 7segment
DIODE F4005
F4007 diode
7 segment LED display project
sm-4 sharp
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StK 412 230
Abstract: digital clock with 7segment stk 412 170 IE-703002-MC V853 V850ES FB330
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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U16906EJ1V0UM
StK 412 230
digital clock with 7segment
stk 412 170
IE-703002-MC
V853
V850ES
FB330
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STK 403 100
Abstract: 7 segment E10501 78K0R UART echo digital clock with 7segment e10501 NEC a1009 pin 7 segment 7 segment LED display project 7segment hs STK 412 240
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TC1796 user manual
Abstract: Tricore* ocds CB-SIO sot 223 marking code TP pin DIAGRAM OF DIP TOP 244 PN RAV 14101 ana 650 TC1796. System and Peripheral Units serial communication in 8051 fbc 8100
Text: User’s Manual, V1.0, June 2005 TC1796 32-Bit Single-Chip Microcontroller Volume 1 of 2 : System Units Volume 2 (of 2): Peripheral Units Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2005-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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TC1796
32-Bit
TC1796
TC1796 user manual
Tricore* ocds
CB-SIO
sot 223 marking code TP
pin DIAGRAM OF DIP TOP 244 PN
RAV 14101
ana 650
TC1796. System and Peripheral Units
serial communication in 8051
fbc 8100
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TC1796 user manual
Abstract: TC1796 ANA 658 22150 TC1796. System and Peripheral Units LTC1905 4514H Infineon Tricore TC1796 LTC3509 40 pin lvds header tcon RENK Pt 100 sensor connection
Text: U s e r ’ s M a nu a l , V2 . 0 , J u l y 2 0 0 7 TC1796 3 2 - B i t S i n g l e - C h i p M i c ro c o n t r o ll e r V o l u m e 1 o f 2 : S y s t e m U n i ts V o l u m e 2 ( o f 2 ): P e r i p h e r a l U n i t s M i c r o c o n t r o l l e rs Edition 2007-07
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TC1796
TC1796 user manual
TC1796
ANA 658 22150
TC1796. System and Peripheral Units
LTC1905
4514H
Infineon Tricore TC1796
LTC3509
40 pin lvds header tcon
RENK Pt 100 sensor connection
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smd diode code o3a
Abstract: qml-38535 CDFP 5962F8762301VXC 5962-E017-11 smd diode code a0a
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add vendor CAGE F8859. Add device class V criteria. Add table III, delta limits. Update boilerplate to MIL-PRF-38535 requirements. -jak 01-09-05 Thomas M. Hess B Add section 1.5, radiation features. Update the boilerplate to include radiation
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F8859.
MIL-PRF-38535
BP4199
F8859
smd diode code o3a
qml-38535
CDFP
5962F8762301VXC
5962-E017-11
smd diode code a0a
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F0514
Abstract: No abstract text available
Text: This X24001 device has been acquired by IC MICROSYSTEMS from Xicor, Inc. X24001 128 Bit Identi 16 x 8 Bit PROM FEATURES DESCRIPTION •2.7V to 5.5V Power Supply •128 Bit Serial E2PROM •Low Power CMOS The X24001 is a CMOS 128 bit serial E PROM, internally organized as 16 x 8. The X24001 features a serial
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X24001
X24001
F0514
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U18515EJ1V0UM00
Abstract: W0005 CA850 ID850QB RX850 SM850 W0901 ld850 W090D
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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triac MAC 97 AB
Abstract: TRIAC BT 136 SLAUE10 triac BT 137 SLAUE10B rc1F BT 136 TRIAC MSP430 msp430 RS232 om02
Text: Chapter 6 On-Chip Peripherals 6-1 The Basic Timer 6.1 The Basic Timer The basic timer is normally used as a time base; it is programmed to interrupt the background program at regular time intervals. Table 6–1 shows all possible basic timer interrupt frequencies that can be set by the control bits in byte
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25xVCC
triac MAC 97 AB
TRIAC BT 136
SLAUE10
triac BT 137
SLAUE10B
rc1F
BT 136 TRIAC
MSP430
msp430 RS232
om02
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A1xx SOT-23
Abstract: No abstract text available
Text: Order this document by MC33349/D Lithium Battery Protection Circuit for One Cell Battery Packs The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection features consist of internally trimmed charge
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MC33349/D
MC33349
MC33349
MC33349/D
A1xx SOT-23
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a7y transistor
Abstract: RASH soj20 Package UD61256 tsu a7y
Text: UD61256 Maintenance only 256K x 1 DRAM Features Description F Dynamic random access memory F F F F F F F F F F 262144 x 1 bit manufactured using a CMOS technology RAS access times 70 ns, 80 ns TTL-compatible Three-state output 256 refresh cycles 4 ms refresh cycle time
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UD61256
PDIP16
SOJ20/26
UD61256
D-01109
D-01101
a7y transistor
RASH
soj20 Package
tsu a7y
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BCP25
Abstract: 2850B25 ADN2850 ADN2850BCP25 ADN2850BCP25-RL7 TSSOP-16 200H 408C E 102H transistor
Text: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection
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1024-Position
ADN2850*
100-Year
C02660
BCP25
2850B25
ADN2850
ADN2850BCP25
ADN2850BCP25-RL7
TSSOP-16
200H
408C
E 102H transistor
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A0xx SOT-23 MOSFET
Abstract: A0xx SOT-23 cell phone detector circuit FET MARKING CODE MC33349 A1xx SOT-23 MC33349N-3R1 mc333493
Text: MC33349 Lithium Battery Protection Circuit for One Cell Battery Packs The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection features consist of
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MC33349
MC33349
r14525
MC33349/D
A0xx SOT-23 MOSFET
A0xx SOT-23
cell phone detector circuit
FET MARKING CODE
A1xx SOT-23
MC33349N-3R1
mc333493
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Untitled
Abstract: No abstract text available
Text: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection
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1024-Position
ADN2850*
100-Year
MO-220
16-Lead
RU-16)
MO-153AB
C02660â
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RASH
Abstract: transistor a7y UD61466
Text: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time
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UD61466
ns/80
PDIP18
D-01109
D-01101
RASH
transistor a7y
UD61466
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UD61464DC
Abstract: 65536X4 RASH UD61464 RW100-50 A7X k
Text: Maintenance only UD61464 64K x 4 DRAM Features FPM facilitates faster data operation with predefined row address. Via 8 Dynamic random access memory address inputs the 16 address bits are transmitted into the internal 65536 x 4 bits manufactured address memories in a time-multiusing a CMOS technology
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UD61464
ns/80
D-01109
D-01101
UD61464DC
65536X4
RASH
UD61464
RW100-50
A7X k
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a7y transistor
Abstract: a7x transistor transistor a7y UD61464 tv pattern generator RASH UD61464DC pd 223
Text: Maintenance only UD61464 64K x 4 DRAM Features FPM facilitates faster data operation with predefined row address. Via 8 Dynamic random access memory address inputs the 16 address bits are transmitted into the internal 65536 x 4 bits manufactured address memories in a time-multiusing a CMOS technology
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UD61464
ns/80
D-01109
D-01101
a7y transistor
a7x transistor
transistor a7y
UD61464
tv pattern generator
RASH
UD61464DC
pd 223
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a7y transistor
Abstract: RASH UD61466 A7X k
Text: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time
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UD61466
ns/80
PDIP18
D-01109
D-01101
a7y transistor
RASH
UD61466
A7X k
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sn 357
Abstract: No abstract text available
Text: I NPPON CHEMHCOM LARGE CAPAaTANCE ALUMINUM ELECTROLYTIC CAPACITORS downsized longer life •Endurance with ripple current: 85”C 2000 hours •N on solvent-proof type ♦ S P A C IFI CATIONS Characteristics Items Category Temperature Range -4 0 to + 8 5 t: 6.3 to 10OVdc - 2 5 to +&5K; (160 to 450Vdc)
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10OVdc)
450Vdc)
450Vcb
120Hz)
22X40
22X45
22X50
30X25
30X30
sn 357
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PROPS MTE Ô3fl23fl3 Q Q Q E ^ m D B ISONY SLD201 U/V SONY. T -m -osr 20mW High Power Laser Diode Description Package Outline SLD201 U/V is a gain-guided high-power laser diode fabricated by MOCVD. Unit: mm SLD201U Features . Low noise S/ N = 8 0 dB Typ. at 5 mW.
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3fl23fl3
SLD201
SLD201U
L0201U/V
T-41-05
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X2816
Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26
Text: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,
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