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MEDL MA5114B
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Bristol Electronics	MA5114B		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MA5114 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MA5114		Dynex	Radiation hard 1024x4 Bit Static RAM		Original	PDF

MA5114 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5114 MARCH 1995 DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,	Original	PDF	MA5114 DS3581-3 MA5114
MA5114 Abstract: a8415 Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with	Original	PDF	MA5114 1024x4 DS3591-5 MA5114 a8415
MA5114 Abstract: 17-18L Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with	Original	PDF	MA5114 1024x4 DS3591-5 MA5114 17-18L
MA5114 Abstract: DS3591-4 Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with	Original	PDF	MA5114 1024x4 DS3591-4 DS3591-5 MA5114
Untitled Abstract: No abstract text available Text: S i GEC P L E S S E Y SE MI CO N D U C T O R S DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3\|im technology. The design uses a 6 transistor cell and has full static operation with	OCR Scan	PDF	DS3581-3 MA5114 MA5114 37bfl522
Untitled Abstract: No abstract text available Text: G E C P L E S S E Y «Asm S h M I < O \ I I ] ( ) K s Radiation Hard 1024x4 Bit Static RAM S10306FD S Issue 1.4 O cto ber 1990 Features A3 A4 Ai Ab A# AU • 3}im CMOS-SOS technology • Latch-up free • Fast access time 90ns typical • Total dose 10s rad (Si)	OCR Scan	PDF	1024x4 S10306FD 5x1010 1024x4bits