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    Untitled

    Abstract: No abstract text available
    Text: M/A-CÔM MM ADV SEMICONDUCTOR 57E D S b M S I Ô B 0 0 0 0 22 b ? T -S I • !/ MA4GM202T-500 2000 2010 2012 2100 MA4GM202T SERIES GaAs M M IC D C -4 GHz SPDT Switch Features ■ BROAD BANDWIDTH: DC - 4 GHz ■ < 3 NANOSECOND SWITCHING jy S K X M ■ CURRENT CONSUMPTION ¿100 ¡jA


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    PDF MA4GM202T-500 MA4GM202T 000D23D

    Untitled

    Abstract: No abstract text available
    Text: ¡PHj yg* y O l l i i lia * Ml M1 11| fi « Im & i t e rt, ^ S H « j» fê l f f i 4 $T ^ ¿M MA4GM201 '20000 MA4GM201-T5. . MA4GM201-500. . MA4GM211-500. . MA4GM202-2000. MA4GM202-T5. . MA4GM202-500. . MA4GM202L-2000 MA4GM202L-T5. MA4GM202L-500. MA4GM202-D14S


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    PDF MA4GM201 MA4GM201-T5. MA4GM201-500. MA4GM211-500. MA4GM202-2000. MA4GM202-T5. MA4GM202-500. MA4GM202L-2000 MA4GM202L-T5. MA4GM202L-500.

    MA4G

    Abstract: GaAs FET chip dca300 MA4GM212-500 M202-2000 MA4GM202-T5
    Text: AJÎKOvi GaAs FET MM 1C Broadband Control Products Capability Guide Features • DC TO 18 GHz OPERATION ■ EXTREMELY LOW DC POWER CONSUMPTION ■ NANOSECOND SWITCHING ■ EXCELLENT INTERMODULATION ■ LOW INSERTION LOSS ■ EXCELLENT TEMPERATURE STABILITY


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