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    MA3DF30

    Abstract: No abstract text available
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Features  High switching speed trr  Soft recovery  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) MA3DF30 O-220D-A1 MA3DF30

    MA3DF30

    Abstract: MA3DF40 MA3df3 Switching Characteristics of Fast Recovery Diodes
    Text: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes „ Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These devices hold the


    Original     		PDF 00V/400V MA3DF30 MA3DF40 O-220D M00737AE M00737BE MA3df3 Switching Characteristics of Fast Recovery Diodes

    MA3DF30

    Abstract: No abstract text available
    Text: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes „ Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These devices hold the


    Original     		PDF 00V/400V MA3DF30 MA3DF40 O-220D MA3DF30ã MA3DF40ã O-220D-A1 MA3DF30 MA3DF40 M00737CE

    ma3df30

    Abstract: MA3Df3
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode 3: Anode


    Original     		PDF 2002/95/EC) MA3DF30 O-220D-A1 ma3df30 MA3Df3

    MA3DF46

    Abstract: MA3df MA3df4
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF46 Silicon mesa type For high frequency recification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode


    Original     		PDF 2002/95/EC) MA3DF46 O-220D-A1 MA3DF46 MA3df MA3df4

    MA3DF40

    Abstract: MA3df MA3df4
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF40 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode 3: Anode M Di ain


    Original     		PDF 2002/95/EC) MA3DF40 O-220D-A1 MA3DF40 MA3df MA3df4

    MA3DF47

    Abstract: MA3df4 MA3df
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF47 Silicon mesa type For high frequency rectification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode


    Original     		PDF 2002/95/EC) MA3DF47 O-220D-A1 MA3DF47 MA3df4 MA3df

    MA3DF40

    Abstract: speed measuring
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF40 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Features  High switching speed trr  Soft recovery  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) MA3DF40 O-220D-A1 MA3DF40 speed measuring

    MA3DF47

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF47 Silicon mesa type For high frequency rectification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode


    Original     		PDF 2002/95/EC) MA3DF47 O-220D-A1 MA3DF47

    MA3DF40

    Abstract: MA3df
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF40 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode 3: Anode


    Original     		PDF 2002/95/EC) MA3DF40 O-220D-A1 MA3DF40 MA3df

    MA3DF30

    Abstract: No abstract text available
    Text: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes „ Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These


    Original     		PDF 00V/400V MA3DF30 MA3DF40 O-220D MA3DF30 MA3DF40 M00737AE

    MA3DF46

    Abstract: MA3df4 MA3DF
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF46 Silicon mesa type For high frequency recification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode


    Original     		PDF 2002/95/EC) MA3DF46 O-220D-A1 MA3DF46 MA3df4 MA3DF

    MA3DF30

    Abstract: MA3df3 MA3df
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode 3: Anode M Di ain


    Original     		PDF 2002/95/EC) MA3DF30 O-220D-A1 MA3DF30 MA3df3 MA3df

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    k11 zener diode

    Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
    Text: Diodes Switching Diodes. K2 Switching Diodes . K2


    Original     		PDF MA24D56 MA24D58 MA24D70 MA24D74 MA3D749 MA3D749A MA3D750 MA3D750A MA3D752 MA3D752A k11 zener diode zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    MA3DF30

    Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
    Text: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF