Untitled
Abstract: No abstract text available
Text: MA2Z748 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification Unit : mm 0.7±0.1 1.25±0.1 0.35±0.1 • Features 1 Reverse voltage DC Unit VR 20 V Repetitive peak reverse voltage V RRM 20 V Average forward current
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MA2Z748
MA2Z720
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 VR Repetitive peak reverse voltage
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2002/95/EC)
MA2Z748
SC-76
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MA2Z748
Abstract: MA3X720 SC-76
Text: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Parameter Symbol Rating Unit VR 20 V Repetitive peak reverse voltage
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MA2Z748
SC-76
MA2Z748
MA3X720
SC-76
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MA2Z748
Abstract: MA3X720 SC-76
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Parameter
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2002/95/EC)
MA2Z748
SC-76
MA2Z748
MA3X720
SC-76
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MA2Z7480G
Abstract: MA3X720
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For small current rectification ue pl d in an c se ed lud
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2002/95/EC)
MA2Z7480G
MA3X720
MA2Z7480G
MA3X720
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MA2Z720
Abstract: MA2Z748
Text: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type Unit : mm • Low VF type of MA2Z720 • High rectification efficiency caused by its low forward-risevoltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)
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MA2Z748
MA2Z720
MA2Z720
MA2Z748
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For small current rectification • Package ■ Features
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2002/95/EC)
MA2Z7480G
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MA2Z7480G
Abstract: MA3X720
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type For super high speed switching For small current rectification • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
MA2Z7480G
MA3X720
MA2Z7480G
MA3X720
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20 V Average forward current
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MA2Z748
MA3X720
MA720)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type For super high speed switching For small current rectification • Package ■ Features • Low VF type of MA3X720 • Low forward voltage VF and good rectification efficiency
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2002/95/EC)
MA2Z7480G
MA3X720
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MA2Z720
Abstract: MA2Z748
Text: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type Unit : mm • Low VF type of MA2Z720 • High rectification efficiency caused by its low forward-risevoltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)
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MA2Z748
MA2Z720
MA2Z720
MA2Z748
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Parameter
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MA2Z748
MA3X720
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MA2Z748
Abstract: MA3X720 MA720
Text: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Symbol Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20
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MA2Z748
SC-90A
MA2Z748
MA3X720
MA720
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diode IR 100 2K
Abstract: diode marking 2k
Text: 2SK1606 Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode ● Low VF type of MA720 ● Low VF (forward rise voltage) with high rectification efficiency
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2SK1606
MA2Z748
MA720
500mA
diode IR 100 2K
diode marking 2k
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MA2Z748
Abstract: MA3X720 SC-76
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 M Di ain sc te on na tin nc
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2002/95/EC)
MA2Z748
SC-76
MA2Z748
MA3X720
SC-76
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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S-8351A50MC-J3JT2G
Abstract: S-8351A33MC-J2ST2G S-8351C32UA S-835x S-8351A50MC-J3J-T2 s-8351c32ua-j6rt2g s-8351cxxma S-8351A30MC-J2PT2G S-8351A60MC-J3TT2G
Text: Rev.2.4_00 STEP-UP, BUILT-IN / EXTERNAL FET PFM CONTROL SWITCHING REGULATOR / SWITCHING REGULATOR CONTROLLER S-8351/8352 Series The S-8351/8352 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an oscillation circuit,
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S-8351/8352
S-8351
S-8351A50MC-J3JT2G
S-8351A33MC-J2ST2G
S-8351C32UA
S-835x
S-8351A50MC-J3J-T2
s-8351c32ua-j6rt2g
s-8351cxxma
S-8351A30MC-J2PT2G
S-8351A60MC-J3TT2G
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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S-Mini
Abstract: SSMini s-mini 2-pin package
Text: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes
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MA2Q705)
S-Mini
SSMini
s-mini 2-pin package
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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Untitled
Abstract: No abstract text available
Text: Panasonic S chottky B arrier D iodes SBD MA2Z748 Silicon epitaxial planer type U nit : mm For super high-speed switching circuit For small current rectification Cathode .^ Anode °- H- ° • Features • Low V[. type of MA720 -H Z Z • Low Vp (forward rise voltage) with high rectification efficiency
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MA2Z748
MA720
400MHz
N-50BU
PG-10N
100mA
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