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    MA SOT23 Search Results

    MA SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    MA SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    Untitled

    Abstract: No abstract text available
    Text: TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current 50 µA, typical • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output


    Original     		PDF TC1014/TC1015/TC1185 TC1014) TC1015) TC1185) OT-23 TC1014/TC1015/TC1185 DS21335E-page

    A9 SOT-23

    Abstract: SOT-23 marking A9 CT713 sot-23 N9 B3 marking transistor sot-23 B9 SOT-23 MARKING CODE MARKING B9 sot-23 marking B5 sot23-5 marking N8 sot-23 transistor marking code a7 SOT-23
    Text: TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current 50 µA, typical • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output


    Original     		PDF TC1014/TC1015/TC1185 TC1014) TC1015) TC1185) OT-23 TC1014/TC1015/TC1185 TC1014-1 8VCT713: OT-23, TC1014-2 A9 SOT-23 SOT-23 marking A9 CT713 sot-23 N9 B3 marking transistor sot-23 B9 SOT-23 MARKING CODE MARKING B9 sot-23 marking B5 sot23-5 marking N8 sot-23 transistor marking code a7 SOT-23

    B9 SOT-23 MARKING CODE

    Abstract: sot-23 MARK a7 LP2980 TC1014 TC1015 TC1107 TC1108 TC1173 TC1185 52s marking code transistor
    Text: TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current 50 µA, typical • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output


    Original     		PDF TC1014/TC1015/TC1185 TC1014) TC1015) TC1185) OT-23 TC1014/TC1015/TC1185 DS21335E-page B9 SOT-23 MARKING CODE sot-23 MARK a7 LP2980 TC1014 TC1015 TC1107 TC1108 TC1173 TC1185 52s marking code transistor

    LP2980

    Abstract: TC1014 TC1015 TC1107 TC1108 TC1173 TC1185 A7 TRANSISTOR sot 23 marking 1F SOT-23 B9 SOT-23 MARKING CODE
    Text: TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current 50 µA, Typ. • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output


    Original     		PDF TC1014/TC1015/TC1185 TC1014) TC1015) TC1185) OT-23A TC1014/TC1015/TC1185 DS21335D-page LP2980 TC1014 TC1015 TC1107 TC1108 TC1173 TC1185 A7 TRANSISTOR sot 23 marking 1F SOT-23 B9 SOT-23 MARKING CODE

    TC1055-3.3VCT713

    Abstract: Marking c9 SOT23-5 TC1054 TC1055 TC1173 TC1186 3,6V ldo Tc117 SOT23-5 marking c9 marking code C9* sot23-5
    Text: TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features General Description • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output


    Original     		PDF TC1054/TC1055/TC1186 TC1054) TC1055) TC1186) OT-23 TC1054, TC1055 TC1186 DS21350D-page TC1055-3.3VCT713 Marking c9 SOT23-5 TC1054 TC1173 3,6V ldo Tc117 SOT23-5 marking c9 marking code C9* sot23-5

    Untitled

    Abstract: No abstract text available
    Text: TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features General Description • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output


    Original     		PDF TC1054/TC1055/TC1186 TC1054) TC1055) TC1186) OT-23 TC1054, TC1055 TC1186 DS21350D-page

    C4NN

    Abstract: 36VCT mark vh 5PIN
    Text: TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features General Description • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output


    Original     		PDF TC1054/TC1055/TC1186 TC1054) TC1055) TC1186) OT-23 TC1054, TC1055 TC1186 regula778-366 DS21350E-page C4NN 36VCT mark vh 5PIN

    microID RFID

    Abstract: TC1XX
    Text: M TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features Package Type • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output • High Output Voltage Accuracy


    Original     		PDF TC1054/TC1055/TC1186 OT-23A TC1054 TC1055 TC1186 TC1054) TC1055) TC1186) OT-23A microID RFID TC1XX

    K 3264 transistor technical data

    Abstract: No abstract text available
    Text: LD2982Axx LD2982Bxx Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible Features • Very low dropout voltage 120 mV at 50 mA and 7 mV at 1 mA load ■ Very low quiescent current (375 mA typ. at 50 mA load and 75 mA at 1 mA)


    Original     		PDF LD2982Axx LD2982Bxx OT23-5L K 3264 transistor technical data

    uc 2895

    Abstract: UC 3528 et 1102 474 3.5v vo LD2982 LD2982BM18R LD2982BXX18
    Text: LD2982BXX18 Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible Features • Very low dropout voltage 120 mV at 50 mA and 7 mV at 1 mA load ■ Very low quiescent current (375 mA typ. at 50 mA load and 75 mA at 1 mA)


    Original     		PDF LD2982BXX18 OT23-5L uc 2895 UC 3528 et 1102 474 3.5v vo LD2982 LD2982BM18R LD2982BXX18

    TC1054

    Abstract: TC1055 TC1173 TC1186 marking code C8 5pin
    Text: M TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features Package Type • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output • High Output Voltage Accuracy


    Original     		PDF TC1054/TC1055/TC1186 TC1054) TC1055) TC1186) OT-23A TC1054 TC1055 TC1186 DK-2750 D-85737 TC1054 TC1055 TC1173 TC1186 marking code C8 5pin

    0/cc 3053 diode PHILIPPINES

    Abstract: LD2982 LD2982BM18R LD2982BXX18 K 3264 transistor K 3264 transistor technical data
    Text: LD2982BXX18 Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible Features • Very low dropout voltage 120 mV at 50 mA and 7 mV at 1 mA load ■ Very low quiescent current (375 mA typ. at 50 mA load and 75 mA at 1 mA)


    Original     		PDF LD2982BXX18 OT23-5L 0/cc 3053 diode PHILIPPINES LD2982 LD2982BM18R LD2982BXX18 K 3264 transistor K 3264 transistor technical data

    JESD97

    Abstract: LD2982 LD2982AXX18 LD2982AXX27 LD2982AXX32 LD2982BXX18 LD2982BXX27 LD2982BXX32
    Text: LD2982Axx LD2982Bxx Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible Features • Very low dropout voltage 120 mV at 50 mA and 7 mV at 1 mA load ■ Very low quiescent current (375 mA typ. at 50 mA load and 75 mA at 1 mA)


    Original     		PDF LD2982Axx LD2982Bxx OT23-5L JESD97 LD2982 LD2982AXX18 LD2982AXX27 LD2982AXX32 LD2982BXX18 LD2982BXX27 LD2982BXX32

    Untitled

    Abstract: No abstract text available
    Text: LD2985Axx LD2985Bxx Very low drop and low noise voltage regulator low ESR capacitors compatible, with inhibit function Features • Very low dropout voltage 280 mV at 150 mA and 7 mV at 1 mA load ■ Very low quiescent current (2 mA typ. at 150 mA load and 80 mA at no load)


    Original     		PDF LD2985Axx LD2985Bxx OT23-5L

    bat41 BAT46

    Abstract: bat49 bat41 bat43 TMMBAT48 BAS70 MELF TMMBAT49 BAT41
    Text: DIODES SIGNAL SCHOTTKY DIODES MINIMELF MELF SOT23 DO41 DO35 UHF AND ULTRA-FAST SWITCHING TA=25°C VRRM Device IF Config. IR* @ VR max (V) (mA) (mA) VF* @ IF max C @ VR F=1MHz Dynamic parameters max Package (V) (V) (V) (mA) (pF) 1N5711 1N6263 70 60 15 15


    Original     		PDF 1N5711 1N6263 TMM6263 BAR18 BAR42 BAR43 BAS70-06 BAR43A BAS70-05 BAR43C bat41 BAT46 bat49 bat41 bat43 TMMBAT48 BAS70 MELF TMMBAT49 BAT41

    LD2985BM50

    Abstract: No abstract text available
    Text: LD2985Axx LD2985Bxx Very low drop and low noise voltage regulator low ESR capacitors compatible, with inhibit function Features • Very low dropout voltage 280 mV at 150 mA and 7 mV at 1 mA load ■ Very low quiescent current (2 mA typ. at 150 mA load and 80 mA at no load)


    Original     		PDF LD2985Axx LD2985Bxx OT23-5L LD2985BM50

    LD2985AM18R

    Abstract: T 4512 H diode LD2985B 33
    Text: LD2985Axx LD2985Bxx Very low drop and low noise voltage regulator low ESR capacitors compatible, with inhibit function Features • Very low dropout voltage 280 mV at 150 mA and 7 mV at 1 mA load ■ Very low quiescent current (2 mA typ. at 150 mA load and 80 mA at no load)


    Original     		PDF LD2985Axx LD2985Bxx OT23-5L LD2985AM18R T 4512 H diode LD2985B 33

    TC1055

    Abstract: TC1173 TC1186 TC1054 CT713
    Text: TC1054/TC1055/TC1186 具有关断和 ERROR 输出的 50 mA100 mA 和 150 mA CMOS LDO 特性 概述 • 低地电流而延长电池使用寿命 • 低压差 • 50 mA （TC1054）、100 mA （TC1055）和 150 mA （TC1186）输出可供选择 • 高输出电压精度


    Original     		PDF TC1054/TC1055/TC1186 mA100 TC1054 TC1055 TC1186 OT-23 TC1054TC1055 TC1054 TC1055 TC1173 TC1186 CT713

    b1 5-sot 23

    Abstract: LP2980 TC1014 TC1015 TC1016 TC1107 TC1108 TC1185 DS21335
    Text: TC1014/TC1015/TC1185 具有关断和参考旁路功能的 50 mA 100 mA 和 150 mA CMOS LDO 特性： 概述 • 极低的供电电流 （典型值 50 µA） • 低压差 • 有 50 mA （TC1014）、 100 mA （TC1015）和 150 mA （TC1016）输出可供选择


    Original     		PDF TC1014/TC1015/TC1185 TC1014 TC1015 TC1016 OT-23A LP2980 TC1014 TC1015 mVTC1185 b1 5-sot 23 LP2980 TC1016 TC1107 TC1108 TC1185 DS21335

    W18 sot23

    Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
    Text: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA


    OCR Scan     		PDF 050I3) OT143 OT323 OT343 BFR92AW BFR93AW BFS17AW S852TW BFR181TW BFR182TW W18 sot23 ic w83 SOT343R bfp280tw SOT-343 BFP181TW

    siemens Transistoren

    Abstract: induktive triac ansteuerung smd transistors SIPMOS application note BSS98 equivalent Siemens Halbleiter Bauelemente Siemens Halbleiter
    Text: Technische Angaben Technical Information SIEMENS SIPMOS Kleinsignal-Bauelemente SIPMOS® Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.


    OCR Scan     		PDF

    zener y11

    Abstract: zener 472
    Text: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N


    OCR Scan     		PDF Diodes/SOT23 zener y11 zener 472

    2SC4370A

    Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
    Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)


    OCR Scan     		PDF 2SC387SS 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2SC4370A 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 bc557 2SA1504 BC337/BC327 2SC3202