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    M7 MARKING FOR DIODES Search Results

    M7 MARKING FOR DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    M7 MARKING FOR DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking of m7 diodes

    Abstract: m7 marking for diodes Amic "marking" marking m7 diodes
    Text: cK&ILMTEMPErATURE Thick Film Temperature MPENSATION2ESISTOR Compensation Resistor 4HIcK&ILMTEMPErATURE • Superior linearity #OMPENSATION2ESISTOR RGT Series ies %XCLUSIVETHICKFILMPROCESS RESULTSINAveryLINEAR NEGATIVe, PPM #RESISTANCE


    Original     		PDF /RT25° HRISTITEXAS53! 43ERIES marking of m7 diodes m7 marking for diodes Amic "marking" marking m7 diodes

    c5v1p

    Abstract: M7 DIODE POLARITY MARKING 02a marking bidirectional diode marking code m7 f6 top marking code F9 BZD27C5V6P marking code M7 diode BZD27C150P
    Text: BZD27C Series Voltage Regulator Diodes BREAKDOWN VOLTAGE : 7 - 188 VOLTS PEAK PULSE POWER : 150 WATTS SOD-123FL Features ◇ ◇ Low leakage current Excellent stability ◇ High temperature soldering guaranteed: 1.0±0.2 Zener and surge current specification


    Original     		PDF BZD27C OD-123FL OD-123FL C200P c5v1p M7 DIODE POLARITY MARKING 02a marking bidirectional diode marking code m7 f6 top marking code F9 BZD27C5V6P marking code M7 diode BZD27C150P

    Untitled

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL BZD27C-SERIES BREAKDOWN VOLTAGE : 7 - 188 VOLTS VOLTAGE REGULATOR DIODES FEATURES ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. PEAK PULSE POWER : 150 WATTS SOD-123FL Cathode Band Top View 1.9± 0.1 1.0±0.2


    Original     		PDF BZD27C---SERIES OD-123FL OD-123FL C200P

    m7 diode BL GALAXY

    Abstract: c5v1p BZD27-C4V7P BZD27C-SERIES M7 DIODE POLARITY MARKING C6V8P BZD27C160P 02a marking bidirectional diode marking code m7 f6 BZD27-C6V2P
    Text: BL GALAXY ELECTRICAL BZD27C-SERIES BREAKDOWN VOLTAGE : 7 - 188 VOLTS VOLTAGE REGULATOR DIODES FEATURES ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. PEAK PULSE POWER : 150 WATTS SOD-123FL ◇ Zener and surge current specification


    Original     		PDF BZD27C---SERIES OD-123FL OD-123FL C200P m7 diode BL GALAXY c5v1p BZD27-C4V7P BZD27C-SERIES M7 DIODE POLARITY MARKING C6V8P BZD27C160P 02a marking bidirectional diode marking code m7 f6 BZD27-C6V2P

    D1414

    Abstract: IEC61000-4
    Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD6.2MF LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DUAL TYPE: COMMON ANODE 3-PIN MINI MOLD This product is a low capacitance type diode developed for E.S.D. (Electrostatic Discharge)


    Original     		PDF IEC61000-4-2 D1414 IEC61000-4

    diode SMD MARKING CODE K6

    Abstract: bzx 79 6v2 BZX 6v8 part marking b36 smd diode smd diode marking code d7 SMD CODE M8 smd marking m4 DIODE smd marking N7 bzx 29 C18 BZX384-C5V1/D5
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product specification Supersedes data of 2003 Apr 01 2004 Mar 22 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


    Original     		PDF BZX384 OD323 SC-76) MAM387 SCA76 R76/02/pp11 diode SMD MARKING CODE K6 bzx 79 6v2 BZX 6v8 part marking b36 smd diode smd diode marking code d7 SMD CODE M8 smd marking m4 DIODE smd marking N7 bzx 29 C18 BZX384-C5V1/D5

    smd diode sod-323 marking code A27

    Abstract: diode smd marking code A27
    Text: DISCRETE SEMICONDUCTORS DAT BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


    Original     		PDF BZX384 OD323 SC-76) MAM387 R76/02/pp11 smd diode sod-323 marking code A27 diode smd marking code A27

    m7 smd diodes NXP

    Abstract: m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 BZX384 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


    Original     		PDF BZX384 OD323 SC-76) MAM387 R76/02/pp11 m7 smd diodes NXP m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3

    marking of m7 diodes

    Abstract: m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 BZX384 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX384 series Voltage regulator diodes Product specification 2003 Apr 01 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


    Original     		PDF M3D049 BZX384 OD323 SCA75 613514/01/pp12 marking of m7 diodes m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes

    zener Marking K7

    Abstract: m7 sod123 D8 marking, SOD123 MMSZ5226-V j6 SOD-123 H7 SOD-123 h0 sod123 MMSZ5231-V E6 zener MMSZ5248-V
    Text: MMSZ5225-V-G to MMSZ5267-V-G Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power Zener ziodes. • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V-G , suffix “C” is ± 2 % tolerance • AEC-Q101 qualified


    Original     		PDF MMSZ5225-V-G MMSZ5267-V-G MMSZ5225B-V-G) AEC-Q101 2002/95/EC 2002/96/EC OD-123 18/10K 10K/box 08/3K zener Marking K7 m7 sod123 D8 marking, SOD123 MMSZ5226-V j6 SOD-123 H7 SOD-123 h0 sod123 MMSZ5231-V E6 zener MMSZ5248-V

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1G FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Marking Shipping L2SA812QLT1G


    Original     		PDF L2SA812 L2SC1623 L2SA812QLT1G 3000/Tape L2SA812QLT3G 10000/Tape L2SA812RLT1G L2SA812RLT3G

    M7 smd diode

    Abstract: diode smd m7 smd diode M7 Diode marking m7 m7 smd diodes MAS70A smd m7 diode m7 diode smd m7a MAS70S
    Text: SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS * Surface mount device * Extremely fast switching * Negligible switching losses * Low forward voltage drop * Very small conduction losses DESCRIPTION Schottky barrier diode encapsulated in a SOT-23 small SMD package


    Original     		PDF OT-23 MAS70 OT-23 MAS70C MAS70A MAS70S M7 smd diode diode smd m7 smd diode M7 Diode marking m7 m7 smd diodes MAS70A smd m7 diode m7 diode smd m7a MAS70S

    zener Marking K7

    Abstract: MARKING H7 SOD-123
    Text: MMSZ5225-V-G to MMSZ5267-V-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V-G , suffix “C” is ± 2 % tolerance


    Original     		PDF MMSZ5225-V-G MMSZ5267-V-G MMSZ5225B-V-G) AEC-Q101 2002/95/EC 2002/96/EC MMBZ5267-V-G zener Marking K7 MARKING H7 SOD-123

    m7 sod123

    Abstract: H8 SOD-123 MMSZ5231-G marking k9 SOD-123 M7 zener
    Text: MMSZ5225-G to MMSZ5267-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-G , suffix “C” is ± 2 % tolerance • AEC-Q101 qualified


    Original     		PDF MMSZ5225-G MMSZ5267-G MMSZ5225B-G) AEC-Q101 AEC-Q101: MMSZ5225B-G3-08 MMSZ5267B-G3-08 2002/95/EC. 2002/95/EC 2011/65/EU. m7 sod123 H8 SOD-123 MMSZ5231-G marking k9 SOD-123 M7 zener

    D8 marking, SOD123

    Abstract: H7 SOD-123 E6 zener
    Text: MMSZ5225-V-G to MMSZ5267-V-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V-G , suffix “C” is ± 2 % tolerance


    Original     		PDF MMSZ5225-V-G MMSZ5267-V-G MMSZ5225B-V-G) AEC-Q101 2002/95/EC 2002/96/EC MMBZ5267-V-G D8 marking, SOD123 H7 SOD-123 E6 zener

    B2BB1

    Abstract: iz 220 RD10M RD11M RD12M RD13M RD15M RD16M RD47M 7M marking
    Text: DATA SHEET ZENER DIODES RD2.0M to RD47M ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD2.0M to RD47M Series are planar type zener diodes Unit: mm processing an allowable power dissipation of 200 mW. 2.8 ± 0.2 Planar process 0.65 +0.1


    Original     		PDF RD47M RD47M B2BB1 iz 220 RD10M RD11M RD12M RD13M RD15M RD16M 7M marking

    M7 DIODE POLARITY

    Abstract: DIODE M7 marking M7 DIODE MARKING
    Text: SGS-THOMSON IM O M iL iig ra fM O O S B Y W 9 9 P /P I/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . . . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY


    OCR Scan     		PDF BYW99PI-200 T0247 BYW99P-200 T024ns M7 DIODE POLARITY DIODE M7 marking M7 DIODE MARKING

    NPN marking 8e

    Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 NPN marking 8e FMMT2222A H9 sot 23 BCW33

    BCW65C

    Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 BCW65C FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P

    hsmp-3800

    Abstract: marking 550 SOT143
    Text: warn HEWLETT mHEM PA CK A R D Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and


    OCR Scan     		PDF HSMP-38XX HSMP-48XX OT-23 OT-143 HSMP-4810 RS-481, hsmp-3800 marking 550 SOT143

    FMMT918

    Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
    Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMT918 OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT918 marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23

    marking of m7 diodes

    Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
    Text: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.


    OCR Scan     		PDF BSS64 BSS63. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 marking of m7 diodes BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan     		PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR

    FMMT-A42R

    Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
    Text: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


    OCR Scan     		PDF FMMT-A42 FMMT-A43 FMMT-A92 FMMT-A93. OT-23 FMMT-A43 FMMT-A13 FMMT-A14 FMMT-A42R A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors