M68Z128W Search Results

Contextual Info: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER

A141

Abstract: A151 A161 M68Z128W TSOP32
Contextual Info: 5 7 . M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / -0.3V ) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW V Cc DATA RETENTION: 1,4V ■ TRI-STATE COMMON I/O

M68Z128W

Abstract: TSOP32 TSOP32 Package
Contextual Info: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER

M68Z128

Abstract: M68Z128W TSOP32 3VE1
Contextual Info: M68Z128W 3V, 1 Mbit 128 Kbit x 8 Low Power SRAM with Output Enable FEATURES SUMMARY • ULTRA LOW DATA RETENTION CURRENT Figure 1. Package – 10nA (typical) – 2.0µA (max) ■ OPERATION VOLTAGE: 3.0V (+0.6 / –0.3V) ■ 128 Kbit x 8 SRAM WITH OUTPUT ENABLE

Contextual Info: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER

Contextual Info: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER

Contextual Info: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER

M68Z128W

Abstract: TSOP32
Contextual Info: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER

ABE 027

Abstract: 44-PIN M48T129V M48T129Y SOH44 TSOP32
Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

TSOP32 FOOTPRINT

Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
Contextual Info: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave

M41Txx

Abstract: SO16 M48Z35A M48T35A m48t35 M48Z128 M48Z129 M48Z2M1 M48Z35 M48Z512A
Contextual Info: Non-Volatile -Volatile RAM Non RAM Selection Tables Selection Tables STMicroelectronics NVRAM Selection Tables July 2000 ZEROPOWER M48Zxxx TIMEKEEPER M48Txxx M48STxxx NVRAM SUPERVISOR M40Zxxx M40SZxxx M48Txxx Optional Low Power SRAM M68Zxxx SERIAL RTC

44-PIN

Abstract: M48T129V M48T129Y SOH44 TSOP32
Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

SOH28

Abstract: TSOP32 M48Z128 M48Z128V M48Z128Y
Contextual Info: M48Z128 M48Z128Y, M48Z128V 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

M48Z128V

Abstract: M48Z128Y SOH28 TSOP32 M48Z128 M68Z128
Contextual Info: M48Z128 M48Z128Y, M48Z128V 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT

Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

44-PIN

Abstract: M48T129V M48T129Y SOH44 TSOP32
Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

14270x

Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

44-PIN

Abstract: M48T129V M48T129Y SOH44 TSOP32
Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

44-PIN

Abstract: M48T129V M48T129Y M48T201V SOH44 TSOP32 129Y
Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and