M62425 Search Results

Contextual Info: C T S G S -T H O M S O N ^ 7 # . HDigœilLIgTOOIfSlDgi M624256 1 Megabit 256K x 4 VERY FAST SRAM WITH OUTPUT ENABLE • 256Kx 4 VERY FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIM ES: 15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

A10C

Abstract: SOJ28 400mils
Contextual Info: C T *J M » S G S -T H O M S O N » » I W ! » M624256 ! « VERY FAST CMOS 1 Megabit 256K x 4 SRAM WITH OUTPUT ENABLE PRELIMINARY DATA • 256Kx 4 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns - LOWVcc DATA RETENTION: 2V

SOJ28

Contextual Info: M624256 1 Megabit 256K x 4 VERY FAST SRAM WITH OUTPUT ENABLE 256K x 4 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 28 1 SOJ28 (E) 400 mils DESCRIPTION

Contextual Info: M624256 1 Megabit 256K x 4 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 256K x 4 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 28 1 SOJ28 (E)

Contextual Info: f= 7 SCS-THOMSON ^ 7 # [lD ^ Q [|[L[l©¥^®R!]D(gi M624256 VERY FAST CMOS 1 Megabit (256K x 4) SRAM WITH OUTPUT ENABLE • 256K x 4 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

Contextual Info: C T * 7 # . S G S -T H O M S O N IM D » llL lM W M624256 lllg i VERY FAST CMOS 1 Megabit 256K x 4 SRAM WITH OUTPUT ENABLE PRELIMINARY DATA • 256Kx 4 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns - LOW Vcc DATA RETENTION: 2V

Contextual Info: f= 7 SGS-THOMSON ^ 7 # M624256 H D g ^ ( ô iL i( g T r ® ( Q ) iQ ( g i VERY FAST CMOS 1 Megabit (256K x 4) SRAM WITH OUTPUT ENABLE • 256K x 4 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17,20, 25ns ■ LOW Vcc DATA RETENTION: 2V

2SA999

Abstract: M62425FP m62425
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M62425FP 2CH ELECTRONIC VOLUME, BALANCE AND 6 OUTPUT PORTS WITH MICROCOMPUTER INTERFACE DESCRIPTION The M62425FP is a VCA Voltage Controlled Am plifier 1C developed for electronic volume of AV equipment. Two built-in DAC channels for the VCA control in channels are capable of controlling each

624256

Abstract: 1SAM
Contextual Info: n = 7 SGS-THOMSON * 7 #« * œ a J » ô M ( g § M624256 VERY FAST CMOS 1 Megabit (256K x 4 SRAM WITH OUTPUT ENABLE ADVANCE DATA • 256K x 4 CMOS FAST SRAM ENABLE with OUTPUT ■ EQUAL CYCLE and ACCESS TIMES: 15, 17, 20, 25ns ■ LOW V cc DATA RETENTION: 2V

Contextual Info: r=7 SGS-THOMSON 73 MtiMMILitglMDiiilgi * M624256 * 1 Megabit 256K x 4 VERY FAST SRAM WITH OUTPUT ENABLE • 256Kx 4 VERY FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ, 400 mil PACKAGE

Contextual Info: M624256A Series 262144-word x 4-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The Hitachi M624256A is a high speed 1M Static RAM organized as 262,144-word x 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology

DPM41028L-45

Abstract: 624256 HM624256LJP-35 CY7C106 CY7C106-25 CY7C106-45 DPM41028S-20 DPM41028S-25 DPM41028S-45 Hitachi Scans-001
Contextual Info: 144 IM CMOS X -f -, S t a t i c * y Y imLÖStCliE M £ tt £ TAAC max ns TCAC max (ns) TOE (ns) TOH min (ns) TOD max (ns) TWP raid (ns) ft R A M ( 2 6 21 4 4 x 4 ) ft % TDS ¡rin (ns) TDH «in (ns) TWD sin (ns) TWR max (ns) V D D or V C C (V) 28 PI N m I DD

M5229P

Abstract: M5282FP M62425FP M51134P 38P4 M62424 M5289P M62403 M5113 equalizer ic m5229p
Contextual Info: •GENERAL PURPOSE ELECTRIC VOLUME Typical electrical characteristics AS IC s Application Electric Volume Function Type No. Ä «SST Remarks M5222L/P/FP MS241L Voltage Control Amplifier Electronic Attenuator) 1.8 to 20 3.6 BP5/8P4/8P2S Stereotjpe, Acorveresponse

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

Contextual Info: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

misplaced Wire Bonds

Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Contextual Info: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .

Contextual Info: M624256A Series 262144-word x 4-bit High Speed CMOS Static RAM HITACHI Description The Hitachi M624256A is a high speed 1M Static RAM organized as 262,144-word x 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology and high

Contextual Info: S5 E D Æ 7 • Traisa? 0030154 ^ 0 4 » s g t h T - H ù - 2 3 -lO S C S -T H O M S O N M D » I[L [IO T G M M 6 2 4 2 5 6 VERY FAST CMOS 1 Megabit 256K x 4 SRAM WITH OUTPUT ENABLE S G S- TH 0 nS 0 N ~ ■ 256K x 4 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES:

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W