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    STMicroelectronics M58BW016BB70T3

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    M58BW016B Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M58BW016BB STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY Original PDF
    M58BW016BB STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORIES Original PDF
    M58BW016BB STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORIES Original PDF
    M58BW016BB100T3FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80PQFP T/R Original PDF
    M58BW016BB100T3T STMicroelectronics 16 MBit (512 kBit x 32, Boot Block, Burst) 3 V Supply Flash Memory Original PDF
    M58BW016BB100T3T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF
    M58BW016BB100T6 STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80PQFP Original PDF
    M58BW016BB100T6FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80PQFP T/R Original PDF
    M58BW016BB100T6T STMicroelectronics 16 MBit (512 kBit x 32, Boot Block, Burst) 3 V Supply Flash Memory Original PDF
    M58BW016BB100T6T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF
    M58BW016BB100ZA3FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80LBGA T/R Original PDF
    M58BW016BB100ZA3T STMicroelectronics 16 MBit (512 kBit x 32, Boot Block, Burst) 3 V Supply Flash Memory Original PDF
    M58BW016BB100ZA3T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF
    M58BW016BB100ZA6 STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80LBGA Original PDF
    M58BW016BB100ZA6FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80LBGA T/R Original PDF
    M58BW016BB100ZA6T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF
    M58BW016BB100ZA6T STMicroelectronics 16 MBit (512 kBit x 32, Boot Block, Burst) 3 V Supply Flash Memory Original PDF
    M58BW016BB70T3T STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORIES Original PDF
    M58BW016BB80T3FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 80NS 80PQFP T/R Original PDF
    M58BW016BB80T3T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF

    M58BW016B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN1360

    Abstract: AN1361 M58BW016D MPC555 MPC565 MPC56X
    Text: AN1360 APPLICATION NOTE Connecting the MPC56x Spanish OAK Microcontroller to the M58BW016B/D Flash Memory CONTENTS • INTRODUCTION ■ POWER SUPPLY MANAGEMENT ■ BUS ARCHITECTURE ■ BUS OPERATIONS and TIMINGS ■ CONCLUSION ■ APPENDIX A. REGISTERS CONFIGURATION


    Original     		PDF AN1360 MPC56x M58BW016B/D M58BW016B/D M58BW016B AN1361) M58BW016D AN1360 AN1361 MPC555 MPC565

    M58BW016xB

    Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016xB M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80

    unlock mobile codes

    Abstract: AN1361 M58BW016D 0x00001
    Text: AN1361 APPLICATION NOTE Tuning Block Protection on the M58BW016B Flash Memory CONTENTS • INTRODUCTION ■ ORGANIZATION ■ BLOCK PROTECTION OPTIONS ■ TUNING BLOCK PROTECTION DESCRIPTION ■ TUNING PROTECTION UNLOCK ■ PROGRAM AND ERASE A TUNING PROTECTED


    Original     		PDF AN1361 M58BW016B unlock mobile codes AN1361 M58BW016D 0x00001

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb

    MPC56x

    Abstract: AN1360 AN1361 M58BW016D MPC500 MPC555
    Text: AN1360 APPLICATION NOTE Connecting a MPC56x Microcontroller to the M58BW016B/D Flash Memory CONTENTS • INTRODUCTION ■ POWER SUPPLY MANAGEMENT ■ BUS ARCHITECTURE ■ BUS OPERATIONS and TIMINGS ■ CONCLUSION ■ REVISION HISTORY ■ APPENDIX A. REGISTERS


    Original     		PDF AN1360 MPC56x M58BW016B/D M58BW016B AN1361) M58BW016D AN1360 AN1361 M58BW016D MPC500 MPC555

    M58BW016DB

    Abstract: M58BW016xB M58BW016BB M58BW016BT M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B M58BW016DB M58BW016xB M58BW016BB M58BW016BT M58BW016DT PQFP80

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80

    m58bw016xb

    Abstract: A2762 M58BW016
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 56MHz PQFP80 M58BW016B LBGA80 m58bw016xb A2762 M58BW016

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT 512Kb 56MHz

    la 7913

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT 512Kb 56MHz la 7913 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H

    Q002

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT 512Kb 56MHz Q002 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz

    M58BW016

    Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB

    transistor SMD p41

    Abstract: transistor c143 HDR 5X2 transistor c144 SMR0805 sog0508wg244l200 C144 TRANSISTOR rpack 10k Header 18X2 smd pushbutton footprint
    Text: Item Number 1 2 3 4 5 6 7 8 Quantity 1 11 3 6 4 1 9 2 Value 220uF 0.1uF 1nF 100uF TANT 0.1uF 10nF 100pF 1nF Description 220uF 10V TPSE227K10R0100 X7R 0.1uF 25V 0805 X7R 1nF 50V 0805 TANT 100UF 16V X7R 0.1uF 25V 0805 X7R 10nF 25V 0805 COG 100pF 50V 0805 X7R 1nF 50V 0805


    Original     		PDF 220uF 100uF 100pF 220uF TPSE227K10R0100 100pF transistor SMD p41 transistor c143 HDR 5X2 transistor c144 SMR0805 sog0508wg244l200 C144 TRANSISTOR rpack 10k Header 18X2 smd pushbutton footprint

    M58BW016

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB M58BW016

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 56MHZ M58BW016

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80

    BAA marking code

    Abstract: M58BW Tricore 1998 TC1775 VDDP813 AS734098-15TI
    Text: A p p l i c a ti o n N o t e , V 1 . 1 , S e p t e m b e r 2 0 0 2 AP32035 TC1775 External memory interface 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . TC1775 Revision History: 2002-09 V 1.1 Previous Version: 2001-09


    Original     		PDF AP32035 TC1775 32-Bit TC1775 BAA marking code M58BW Tricore 1998 VDDP813 AS734098-15TI