M54HC375 Search Results

Contextual Info: r z 7 SCS-THOMSON Ä 7 # M Œ m C K g ïïM K M54HC375 M74HC375 QUAD D TYPE LATCH • HIGH SPEED tpD = 14 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 1 (iA (MAX.) AT T a = 25 °C ■ HIGH NOISE IMMUNITY Vnih = V n il = 28 % V cc (MIN.) ■ OUTPUT DRIVE CAPABILITY

74HC375

Contextual Info: Æ 7 S G S -T H O M S O N À T# * œ [L [iœ (5 [* § M54HC375 M74HC375 QUAD D TYPE LATCH • HIGH SPEED tp D = 13 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION lCc = 1 mA (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY V nih = V n il = 28% V c c (MIN).

74HC375

Abstract: M54HC375 M54HC375F1R M74HC375 M74HC375B1R M74HC375C1R M74HC375M1R
Contextual Info: M54HC375 M74HC375 QUAD D TYPE LATCH . . . . . . . . HIGH SPEED tPD = 14 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: s tE » • 7 ^ 2 3 7 252 o o M o n o SGS-THOMSON [LIKgTORKgS m s g th M54HC375 M74HC375 S G S-THOMSON QUAD D TYPE LATCH ■ HIGH SPEED tPD = 13 ns TYP. at VCc = 5V ■ LOW POWER DISSIPATION Ice = 1 f«A (MAX.) at T a = 25°C ■ HIGH NOISE IMMUNITY V n !H = V n IL= 28% Vcc (MIN).

74HC375

Contextual Info: M54HC375 M74HC375 Æ 7 S G S -T H O M S O N ^ 7 # KÆO [^ Q [i[L[l©ir^©R!lD(gi QUAD D TYPE LATCH • HIGH SPEED tpD = 13 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION Ice = 1 /*A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY V n IH = V n IL= 28% Vcc (MIN).

74hc375

Abstract: 54HC 74HC M54HC375 M74HC375 D type latch
Contextual Info: M54HC375 M74HC37S , e4 ^ HS-CMOS effSv INTEGRATED CIRCUITS P R E L IM IN A R Y D A T A QUAD D TYPE LATCH DESCRIPTION T h e M 5 4 /7 4 H C 3 7 5 is a high speed C M O S Q U A D D T Y P E LATCH fabricated in silicon gate C 2M O S technology. Is has th e sam e high speed perfor­