M52S32162A Search Results

M52S32162A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M52S32162A		Elite Semiconductor Memory Technology	1M x 16-Bit x 2Banks Synchronous DRAM		Original	PDF
M52S32162A-10BG		Elite Semiconductor Memory Technology	1M x 16-Bit x 2Banks Synchronous DRAM		Original	PDF
M52S32162A-10TG		Elite Semiconductor Memory Technology	1M x 16-Bit x 2Banks Synchronous DRAM		Original	PDF
M52S32162A-7.5TG		Elite Semiconductor Memory Technology	1M x 16-Bit x 2Banks Synchronous DRAM		Original	PDF

M52S32162A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
M52S32162A Contextual Info: ESMT M52S32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3	Original	M52S32162A 16Bit M52S32162A	PDF
M52S32162A Abstract: MAKING A10 BGA Contextual Info: ESMT M52S32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3	Original	M52S32162A 16Bit M52S32162A MAKING A10 BGA	PDF
Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics	Original	M52S32162A M52S32162A 16Bit	PDF
M52S32162A Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics	Original	M52S32162A 16Bit M52S32162A	PDF
M52S32162A Contextual Info: ESMT M52S32162A Operation Temperature Condition -40°C ~85°C Revision History : Revision 1.0 Jul. 25, 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/30 ESMT M52S32162A Operation Temperature Condition -40°C ~85°C	Original	M52S32162A 16Bit M52S32162A	PDF
Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Oct. 2006 Revision : 1.0 1/30 ESMT M52S32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z	Original	M52S32162A 16Bit	PDF
M13S2561616A-5TG Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now	Original	256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII	PDF