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    M364E040 Search Results

    M364E040 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M364E0404BT0-C50 Samsung Electronics 4M x 64 DRAM DIMM Using 4Mx16, 4K Refresh, 5V Original PDF
    M364E0404BT0-C60 Samsung Electronics 4M x 64 DRAM DIMM Using 4Mx16, 4K Refresh, 5V Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E040 8 4BT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M364E040(8)4BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M364E040 4Mx64 4Mx16 4Mx16, 4Mx64bits 100Min

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E040 8 4CT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E040(8)4CT0-C DRAM MODULE M364E040(8)4CT0-C


    Original     		PDF M364E040 4Mx64 4Mx16 4Mx16, 4Mx64bits