M3 SMD TRANSISTOR Search Results

smd transistor 331

Abstract: TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f 4312 020 36640 I5 smd transistor ptfe trimmer philips 100 pf smd transistor ats
Contextual Info: N AMER PHILIPS/DISCRETE bRE T> • bb53T31 002ÖÖM7 M3Ö MARX Philios Semiconductors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile

power window motor 12v

Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
Contextual Info: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping

TPSD336K025R0100

Abstract: 1SMB100AT3G
Contextual Info: NCP1083WIRGEVB Compact, High Efficiency, 30 W Reference Platform, Supporting Wide Auxiliary Input Voltage, with the NCP1083 Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Board Details The NCP1083WIRGEVB implements a PoE module

qfp 32 land pattern

Abstract: SSOP16 SSOP24
Contextual Info: Philips Semiconductors PowerMOS transistors Mounting and soldering MOUNTING AND SOLDERING Page INTRODUCTION LEADED DEVICES Handling Soldering GENERAL DATA AND INSTRUCTIONS FOR THE SOT186A; SOT263; TO 220AB General rules Mounting methods Heatsink requirements

ssop24 footprint

Abstract: PowerMos transistors TO220 package SSOP16 SSOP24 SSOP24 300 1 footprint sot89 stencil
Contextual Info: DISCRETE SEMICONDUCTORS Mounting and soldering PowerMOS transistors 1998 Dec 02 Philips Semiconductors PowerMOS transistors Mounting and soldering MOUNTING AND SOLDERING Page INTRODUCTION LEADED DEVICES Handling Soldering GENERAL DATA AND INSTRUCTIONS FOR THE

WM8960G

Abstract: SMD FET j11 smd diode SM 97 smd transistor j19 resistor pth vishay MCR10EZHE C61 capacitor smd capacitor philips 0805 smd H3 sot363 Y2 series surface mount SMD transistor
Contextual Info: 6158-EV1-REV1 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6158-EV1 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8960 DATE: February 2008 DOC REVISION: Rev 1.1 Customer Information 1 February 2008, Rev 1.1 6158-EV1-REV1 Schematic and Layout

smd dual transistor f1

Abstract: SMD W4 Transistor w3 smd transistor sgs c64 transistor h8 sot23 diode zener Multicomp SOT W3 SMD transistor 2010 smd resistor m20 sot23 transistor schematic diagram phono to usb
Contextual Info: 6100-EV1 Customer Board Schematic & Layout DOC TYPE: SCHEMATIC AND LAYOUT BOARD REFERENCE: 6100-EV1-REV1 BOARD TYPE: Customer Main Board WOLFSON DEVICE S : WM8751, WM8955 and WM8955B DATE: July 2010 DOC REVISION REVISION: 12 1.2 Customer Information 1 July 2010, Rev 1.2

zener smd diode h9

Abstract: smd diode h9 SMD Capacitor product Multicomp N0805R105KCT kp smd transistor multicomp resistor 4.7 usb to phono 7357 schematic diagram phono to usb
Contextual Info: 6162-EV1-REV2 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6162-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8940, WM8941, WM8952 DATE: April 2008 DOC REVISION: Rev 1.0 Customer Information 1 April 2008, Rev 1.0 6162-EV1-REV2

resistor SMD footprint

Abstract: multicomp 0603 smd resistor footprint Multicomp 0603 footprint FERRITE BEAD INDUCTOR MC34064 C69 diode sm jack p2 3.5mm wm8804 kp-2012mgc 5W zener diode
Contextual Info: 6201-EV1-REV2 Schematic and Layout DOC TYPE: SCHEMATIC AND LAYOUT BOARD REFERENCE: 6201-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8903 DATE: May 2009 DOC REVISION: Rev 1.1 1 May 2009, Rev 1.1 6201-EV1-REV2 Schematic and Layout SCHEMATIC Sheet 1: Top Level

SMD Capacitor product

Abstract: SC4 TRANSISTOR SMD 1x2 pin header 2.54mm pitch MOSFET C65 Multicomp DIODE SMD 1206 philips make transistor smd R55 6061-EV1-REV1 KP-2012MGC microSMD035F-2
Contextual Info: 6061-EV1-REV1 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6061-EV1 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8711/8731/8951 DATE: January 2008 DOC REVISION: Rev 1.1 Customer Information 1 January 2008, Rev 1.1 6061-EV1-REV1 Schematic and Layout

C18 ph zener

Abstract: MC 0603 zener C47 PH 7357 Phycomp chip capacitor F1 J37 KP 2010 microSMD035F-2 schematic diagram phono to usb SMD FET j11
Contextual Info: 6162-EV1-REV2 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6162-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8940, WM8941, WM8952, WM8974, WM8950 DATE: January 2010 DOC REVISION: Rev 1 1.1 1 Customer Information 1 January2010, Rev 1.1

10a h-bridge driver

Abstract: H-bridge speed control 12v 10a 30V 20A 10KHz power MOSFET h-bridge pwm schematics circuit mosfet driver to drive 50V VDD h-bridge mosfet MD7120DB2 POS-100 ClassD Amplifier 100v "AC Motors" AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
Contextual Info: MD7120DB2 MD7120 High Speed 200V H-Bridge Demo Board Introduction Designing with the MD7120 The Supertex MD7120 is a high speed MOSFET driver designed to drive four N-channel MOSFET transistors in a full H-bridge configuration. It consists of control logic

Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W WITH 19 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

STMICROELECTRONICS MSL

Abstract: pd54008l
Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W WITH 19 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

SMD DIODE 1N4007 DATASHEET

Abstract: PC817 SMD smd transistor t1A SMD resistors 2r2 transistor SMD 24 optocoupler PC817 smd diode ED t1A transistor smd SMD transistor r24 1N4007 SMD
Contextual Info: STEVAL-ISA019V2 Item Quantity Reference Capacitors: 1 2 C1,C2 2 2 C3,C4 3 1 C5 4 1 C6 5 2 C12 6 1 C9 7 1 C10 8 1 C11 9 1 C13 10 1 C7 11 1 C8 Diodes: 12 1 D11 13 1 D9 3 D7,D8,D10 14 15 1 D6 16 1 D5 17 4 D1,D2,D3,D4 Mechanical parts: 18 1 F1 19 2 het1, het2

Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE

d480 NPN

Abstract: A715 transistor TRANSISTOR NPN D362 transistor a715 kemet capacitor 100nF 0603 d480 mosfet r466 mosfet capacitor wima mks 4 U740 aks ti 79
Contextual Info: Application Report SLEA026 – December 2003 TAS5076-5182C6EVM Kim Nordtorp Madisen Digital Audio & Video Products ABSTRACT The TAS5076-5182C6EVM board is a six channel Pure Path Digital evaluation module for the integrated circuits TAS5076PFC and TAS5182DCA from Texas Instruments TI .

Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous

DS99004

Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous

TO-268

Abstract: BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint
Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 28N170A IXBT 28N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 15N170 IXBT 15N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous

transistor smd bc rn

Abstract: SMD transistor BC RN VEI 005
Contextual Info: SIEMENS Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar 1C Features • • • • • • • • • Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable