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    M3 SMD TRANSISTOR Search Results

    M3 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    M3 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power window motor 12v

    Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
    Text: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping


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    PDF STB50NE10 STGD3NB60SD STB9NB50 O-220 STP80NE03L-06 STB80o STB80NF55L-06 OT-223 PowerSO-10TM O-220 power window motor 12v wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor

    TPSD336K025R0100

    Abstract: 1SMB100AT3G
    Text: NCP1083WIRGEVB Compact, High Efficiency, 30 W Reference Platform, Supporting Wide Auxiliary Input Voltage, with the NCP1083 Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Board Details The NCP1083WIRGEVB implements a PoE module


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    PDF NCP1083WIRGEVB NCP1083 NCP1083WIRGEVB IEEE802 EVBUM2029/D TPSD336K025R0100 1SMB100AT3G

    qfp 32 land pattern

    Abstract: SSOP16 SSOP24
    Text: Philips Semiconductors PowerMOS transistors Mounting and soldering MOUNTING AND SOLDERING Page INTRODUCTION LEADED DEVICES Handling Soldering GENERAL DATA AND INSTRUCTIONS FOR THE SOT186A; SOT263; TO 220AB General rules Mounting methods Heatsink requirements


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    PDF OT186A; OT263; 220AB components24 MLC747 SSOP16 OT338-1) SSOP24 OT340-1) qfp 32 land pattern SSOP16 SSOP24

    ssop24 footprint

    Abstract: PowerMos transistors TO220 package SSOP16 SSOP24 SSOP24 300 1 footprint sot89 stencil
    Text: DISCRETE SEMICONDUCTORS Mounting and soldering PowerMOS transistors 1998 Dec 02 Philips Semiconductors PowerMOS transistors Mounting and soldering MOUNTING AND SOLDERING Page INTRODUCTION LEADED DEVICES Handling Soldering GENERAL DATA AND INSTRUCTIONS FOR THE


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    PDF OT186A; OT263; 220AB MLC747 SSOP16 OT338-1) SSOP24 OT340-1) OT338-1 ssop24 footprint PowerMos transistors TO220 package SSOP16 SSOP24 SSOP24 300 1 footprint sot89 stencil

    WM8960G

    Abstract: SMD FET j11 smd diode SM 97 smd transistor j19 resistor pth vishay MCR10EZHE C61 capacitor smd capacitor philips 0805 smd H3 sot363 Y2 series surface mount SMD transistor
    Text: 6158-EV1-REV1 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6158-EV1 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8960 DATE: February 2008 DOC REVISION: Rev 1.1 Customer Information 1 February 2008, Rev 1.1 6158-EV1-REV1 Schematic and Layout


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    PDF 6158-EV1-REV1 6158-EV1 WM8960 WM8804 WM8960G SMD FET j11 smd diode SM 97 smd transistor j19 resistor pth vishay MCR10EZHE C61 capacitor smd capacitor philips 0805 smd H3 sot363 Y2 series surface mount SMD transistor

    smd dual transistor f1

    Abstract: SMD W4 Transistor w3 smd transistor sgs c64 transistor h8 sot23 diode zener Multicomp SOT W3 SMD transistor 2010 smd resistor m20 sot23 transistor schematic diagram phono to usb
    Text: 6100-EV1 Customer Board Schematic & Layout DOC TYPE: SCHEMATIC AND LAYOUT BOARD REFERENCE: 6100-EV1-REV1 BOARD TYPE: Customer Main Board WOLFSON DEVICE S : WM8751, WM8955 and WM8955B DATE: July 2010 DOC REVISION REVISION: 12 1.2 Customer Information 1 July 2010, Rev 1.2


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    PDF 6100-EV1 6100-EV1-REV1 WM8751, WM8955 WM8955B smd dual transistor f1 SMD W4 Transistor w3 smd transistor sgs c64 transistor h8 sot23 diode zener Multicomp SOT W3 SMD transistor 2010 smd resistor m20 sot23 transistor schematic diagram phono to usb

    zener smd diode h9

    Abstract: smd diode h9 SMD Capacitor product Multicomp N0805R105KCT kp smd transistor multicomp resistor 4.7 usb to phono 7357 schematic diagram phono to usb
    Text: 6162-EV1-REV2 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6162-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8940, WM8941, WM8952 DATE: April 2008 DOC REVISION: Rev 1.0 Customer Information 1 April 2008, Rev 1.0 6162-EV1-REV2


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    PDF 6162-EV1-REV2 WM8940, WM8941, WM8952 zener smd diode h9 smd diode h9 SMD Capacitor product Multicomp N0805R105KCT kp smd transistor multicomp resistor 4.7 usb to phono 7357 schematic diagram phono to usb

    resistor SMD footprint

    Abstract: multicomp 0603 smd resistor footprint Multicomp 0603 footprint FERRITE BEAD INDUCTOR MC34064 C69 diode sm jack p2 3.5mm wm8804 kp-2012mgc 5W zener diode
    Text: 6201-EV1-REV2 Schematic and Layout DOC TYPE: SCHEMATIC AND LAYOUT BOARD REFERENCE: 6201-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8903 DATE: May 2009 DOC REVISION: Rev 1.1 1 May 2009, Rev 1.1 6201-EV1-REV2 Schematic and Layout SCHEMATIC Sheet 1: Top Level


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    PDF 6201-EV1-REV2 WM8903 resistor SMD footprint multicomp 0603 smd resistor footprint Multicomp 0603 footprint FERRITE BEAD INDUCTOR MC34064 C69 diode sm jack p2 3.5mm wm8804 kp-2012mgc 5W zener diode

    SMD Capacitor product

    Abstract: SC4 TRANSISTOR SMD 1x2 pin header 2.54mm pitch MOSFET C65 Multicomp DIODE SMD 1206 philips make transistor smd R55 6061-EV1-REV1 KP-2012MGC microSMD035F-2
    Text: 6061-EV1-REV1 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6061-EV1 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8711/8731/8951 DATE: January 2008 DOC REVISION: Rev 1.1 Customer Information 1 January 2008, Rev 1.1 6061-EV1-REV1 Schematic and Layout


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    PDF 6061-EV1-REV1 6061-EV1 WM8711/8731/8951 WM8804 SMD Capacitor product SC4 TRANSISTOR SMD 1x2 pin header 2.54mm pitch MOSFET C65 Multicomp DIODE SMD 1206 philips make transistor smd R55 6061-EV1-REV1 KP-2012MGC microSMD035F-2

    C18 ph zener

    Abstract: MC 0603 zener C47 PH 7357 Phycomp chip capacitor F1 J37 KP 2010 microSMD035F-2 schematic diagram phono to usb SMD FET j11
    Text: 6162-EV1-REV2 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6162-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8940, WM8941, WM8952, WM8974, WM8950 DATE: January 2010 DOC REVISION: Rev 1 1.1 1 Customer Information 1 January2010, Rev 1.1


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    PDF 6162-EV1-REV2 WM8940, WM8941, WM8952, WM8974, WM8950 January2010, C18 ph zener MC 0603 zener C47 PH 7357 Phycomp chip capacitor F1 J37 KP 2010 microSMD035F-2 schematic diagram phono to usb SMD FET j11

    10a h-bridge driver

    Abstract: H-bridge speed control 12v 10a 30V 20A 10KHz power MOSFET h-bridge pwm schematics circuit mosfet driver to drive 50V VDD h-bridge mosfet MD7120DB2 POS-100 ClassD Amplifier 100v "AC Motors" AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
    Text: MD7120DB2 MD7120 High Speed 200V H-Bridge Demo Board Introduction Designing with the MD7120 The Supertex MD7120 is a high speed MOSFET driver designed to drive four N-channel MOSFET transistors in a full H-bridge configuration. It consists of control logic


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    PDF MD7120DB2 MD7120 MD7120 10a h-bridge driver H-bridge speed control 12v 10a 30V 20A 10KHz power MOSFET h-bridge pwm schematics circuit mosfet driver to drive 50V VDD h-bridge mosfet MD7120DB2 POS-100 ClassD Amplifier 100v "AC Motors" AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

    Untitled

    Abstract: No abstract text available
    Text: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W WITH 19 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION


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    PDF PD54008L PD54008L

    STMICROELECTRONICS MSL

    Abstract: pd54008l
    Text: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W WITH 19 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION


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    PDF PD54008L PD54008L STMICROELECTRONICS MSL

    c225 capacitor smd

    Abstract: D313 amplifier 500 watt audio subwoofer subwoofer 300 watts amplifier C507 Zener C919 diode BUF c907 Zener C444 power supply with regulator D313 high subwoofer 100 watts amplifier
    Text: Application Report SLEA031 - MARCH 2004 TAS5066-5112F6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5112F6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5112ADFD from Texas Instruments TI .


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    PDF SLEA031 TAS5066-5112F6EVM TAS5066 TAS5112ADFD 24-bit 192kHz. c225 capacitor smd D313 amplifier 500 watt audio subwoofer subwoofer 300 watts amplifier C507 Zener C919 diode BUF c907 Zener C444 power supply with regulator D313 high subwoofer 100 watts amplifier

    Untitled

    Abstract: No abstract text available
    Text: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF LET9045S PowerSO-10RF LET9045S

    AN1294

    Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
    Text: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF LET9045S PowerSO-10RF LET9045S AN1294 J-STD-020B PD57030S capacitor 220uf

    Untitled

    Abstract: No abstract text available
    Text: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE


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    PDF LET9060S PowerSO-10RF LET9060S

    d480 NPN

    Abstract: A715 transistor TRANSISTOR NPN D362 transistor a715 kemet capacitor 100nF 0603 d480 mosfet r466 mosfet capacitor wima mks 4 U740 aks ti 79
    Text: Application Report SLEA026 – December 2003 TAS5076-5182C6EVM Kim Nordtorp Madisen Digital Audio & Video Products ABSTRACT The TAS5076-5182C6EVM board is a six channel Pure Path Digital evaluation module for the integrated circuits TAS5076PFC and TAS5182DCA from Texas Instruments TI .


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    PDF SLEA026 TAS5076-5182C6EVM TAS5076-5182C6EVM TAS5076PFC TAS5182DCA 24-bit TAS5076 TAS5182, d480 NPN A715 transistor TRANSISTOR NPN D362 transistor a715 kemet capacitor 100nF 0603 d480 mosfet r466 mosfet capacitor wima mks 4 U740 aks ti 79

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


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    PDF 42N170A O-268 O-247) 728B1

    DS99004

    Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
    Text: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


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    PDF 6N170 O-247) 728B1 DS99004 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd

    TO-268

    Abstract: BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint
    Text: ADVANCE TECHNICAL INFORMATION High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 28N170A IXBT 28N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 28N170A O-268 O-247) 728B1 123B1 728B1 065B1 TO-268 BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 15N170 IXBT 15N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


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    PDF 15N170 15N170 O-268 O-247 O-268 O-247)

    smd transistor 331

    Abstract: TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f 4312 020 36640 I5 smd transistor ptfe trimmer philips 100 pf smd transistor ats
    Text: N AMER PHILIPS/DISCRETE bRE T> • bb53T31 002ÖÖM7 M3Ö MARX Philios Semiconductors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile


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    PDF BLU56 bb53T31 OT223 OT223 MC3027 smd transistor 331 TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f 4312 020 36640 I5 smd transistor ptfe trimmer philips 100 pf smd transistor ats

    transistor smd bc rn

    Abstract: SMD transistor BC RN VEI 005
    Text: SIEMENS Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar 1C Features • • • • • • • • • Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable


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    PDF Q67000-A8339 S800M3Ã Q67000-A8340 25max 35x45' fl23SbD5 transistor smd bc rn SMD transistor BC RN VEI 005