Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    M28C16B Search Results

    M28C16B Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28C16B STMicroelectronics 16 KBIT (2KB X8) PARALLEL EEPROM WITH SOFTWARE DATA PROTECTION Original PDF
    M28C16B-120K1TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C16B-120K6TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C16B-120WK1TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C16B-120WK6TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C16B-150WK1TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C16B-150WK6TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C16B-90K1TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C16B-90K6TR STMicroelectronics 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection Original PDF
    M28C16B-W STMicroelectronics 16 KBIT (2KB X8) PARALLEL EEPROM WITH SOFTWARE DATA PROTECTION Original PDF

    M28C16B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28C16

    Abstract: M28C16B M28C17B PLCC32
    Text: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DATA BRIEFING • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    Original
    PDF M28C16B M28C17B M28CxxB M28CxxB-W PLCC32 M28C16B M28C17B 2048x8 M28C16 M28C16 PLCC32

    M28C16B

    Abstract: M28C17B PLCC32
    Text: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■


    Original
    PDF M28C16B M28C17B M28CxxB M28CxxB-W PLCC32 M28C16B M28C17B 2048x8 PLCC32

    PLCC32

    Abstract: M28C16B M28C17B
    Text: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    Original
    PDF M28C16B M28C17B M28CxxB M28CxxB-W PLCC32 M28C16B M28C17B 2048x8 PLCC32

    M28C16B

    Abstract: M28C17B PLCC32
    Text: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    Original
    PDF M28C16B M28C17B M28CxxB M28CxxB-W PLCC32 M28C16B M28C17B 2048x8 PLCC32

    PDIP28

    Abstract: EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W
    Text: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 150ns. They can also be randomly written at a Byte level without previous erasure. Page


    Original
    PDF 150ns. memIP28* TSOP32, PLCC32, PDIP32 FLPARAL/0699 PDIP28 EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


    Original
    PDF operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi

    plcc32

    Abstract: PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W
    Text: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 120ns. They can also be randomly written at a Byte level without previous erasure. Page


    Original
    PDF 120ns. M28C16B-W 120ns, M28C17A 150ns, M28C17A-W 250ns, M28C17B M28C17B-W plcc32 PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W

    TAG 9109

    Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
    Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in


    Original
    PDF 286-CJ103 TAG 9109 M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle

    Untitled

    Abstract: No abstract text available
    Text: M 28C16B M 28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at Vcc=5V ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28CxxB - 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)


    OCR Scan
    PDF 28C16B 28C17B M28CxxB M28CxxB-W M28C16B M28C17B 2048x8