M27C4001S Search Results

Contextual Info: /= 7 S G S -TH O M S O N M27C4001 CMOS 4 Megabit 512K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZERO W AIT STATE ■ LOW POWER “C M O S” CONSUMPTION: - Active Current 50m A at 5MHz

M27C4001

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 30mA at 5MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C4001

Abstract: PDIP32 PLCC32 TSOP32 SGS-Thomson e-prom, M27C4001 BP-DIP32
Contextual Info: M27C4001 4 Megabit 512K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 55ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 48sec.

Contextual Info: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 30mA at 5MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

SGS-Thomson m27c4001

Abstract: CMOS J601 27c4001 M27C4001 M27C4001-12F1
Contextual Info: JAN 2 2 199T SGS-THOMSON M27C4001 4096K 512K x 8 CMOS UV EPROM PRELIMINARY DATA VERY FAST ACCESS TIME : 100ns. COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : . Operating current 70mA at 10 MHz . Standby current 10OjiA.

fzt 571

Abstract: 21DF IA10 M27C4001 PLCC32 TSOP32 SGS-Thomson m27c4001
Contextual Info: n= 7 S G S -T H O M S O N ^ 7 1» M g [ M D ilL i( IT n M lD ( § i M27C4001 4 Megabit (512K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER "CMOS’ CONSUMPTION: - Active Current 30mA at 5MHz

SGS-Thomson m27c4001

Abstract: M27C4001 PLCC32 TSOP32
Contextual Info: M27C4001 4 Megabit 512K x 8 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 70ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER ”CMOS” CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V

Contextual Info: Æ T SGD»llLIW R!10 gi S-TH O M SO N M27C4001 4 Megabit (512K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS’ CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 100|xA

Contextual Info: SGS-THOMSON M27C4001 4096K 512K x 8 CMOS UV EPROM PRELIMINARY DATA • VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER '’CMOS" CONSUMPTION : . Operating current 70mA at 10 MHz - Standby current 100(iA.

27C4001-12F1

Abstract: 27C4001-15 27C40012
Contextual Info: 5 Ï. SGS-THOMSON itLKSTJI^OliìDOlSl M27C4001 4096K 512K x 8 CMOS UV EPROM PRELIM INA R Y DATA • VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 70mA at 10 MHz

Contextual Info: SGS-THOMSON ^ 7 # M27C4001 ^ 0 g ^ @ [E L [E ^ (Q R 3 0 (g i CMOS 4 Megabit (512K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 50mA at 5MHz

4001 CMOS

Abstract: M27C4001 27c4001
Contextual Info: 5SE » • 7 ^ 2 =1 5 37 G037b42 S G S -T H O M S O N 5 7 . S47 s 6 ■ s - S 6 T H 71 th o b s o n ' K L tiM O M S — M 27C 4001 CMOS 4 Megabit 512K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE

Contextual Info: JAN 2 2 991 SGS-THOMSON M27C4001 iy 4096K (512K x 8 CMOS UV EPROM PRELIMINARY DATA • VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : . Operating current 70mA at 10 MHz

M27C4001

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 30mA at 5MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C4001

Abstract: JESD97 PDIP32 PLCC32 TSOP32 LCCC3
Contextual Info: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 35ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA ■ Programming voltage: 12.75V ± 0.25V

Contextual Info: /T T *JW, S C S -T H O M S O N Hn»[llLll gra E!IO®i M27C4001 4 Megabit (512Kx 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V

M27C4001

Abstract: M27C400
Contextual Info: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 35ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA ■ Programming voltage: 12.75V ± 0.25V

EPROM M27C512

Abstract: SGS M27C512 thomson eprom M27C512 PDIP28 PLCC32 m27c4001 m27c512 PLCC32 M27C1024 m27c1001 plcc32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

Contextual Info: /IT SGSTHOM SON ^ 7 # H O g ® (S i[L i(g lÏÏ^ (Q )M O i M27C4001 CMOS 4 Megabit (512K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION:

27C4001

Abstract: DA217
Contextual Info: SGS-THOMSON M27C4001 4 Megabit 512K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 55ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30m A at 5MHz - Standby Current lOO^A PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE tor AUTOMATED PROGRAMMING PROGRAMMING TIMES ot AROUND 48sec.