M23C100 Search Results

m23c1001

Contextual Info: rZ Z ^ 7# S G S -T H O M S O N M [i3©@[L!ICT[Ri©M gS M23C1001 1024K (128K x 8 CMOS ROM • VERY FAST ACCESS TIME : 100 ns (Chip select or address access time) ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 40 mA Max. _ Standby current 20 ^A Max.

Contextual Info: SGS-THOMSON M23C1001 ^ 7 # IM ^ Q iŒ (*(Q )[*S CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|xA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION

AAZZ

Abstract: m23c100
Contextual Info: / = T SGS-THOMSON * J Æ > RfflD g^(Q iLi(gU^ iD(gi M23C1000 CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION

Contextual Info: ¿ = 7 SG S -ltfO M SO N M23C1000 CMOS 1 Megabit 128K x 8 ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION ■ CHIP ENABLE ACTIVE LEVEL MASK PRO­

23c1000

Contextual Info: f Z 7 SGS-THOMSON ^7# M [R!©IIL[I STr[KS©[MDËS M 23C 1000 1024K (128K x 8 CMOS ROM • VERY FAST ACCESS TIME : 100 ns (Chip select or address access time) ■ LOW POWER "CM O S” CONSUMPTION : _ Operating current 40 mA Max. _ Stand by current 20 |iA Max.

EPROM

Abstract: M87C512 m27c256 UV EPROM ET2716
Contextual Info: GENERAL INDEX EPROM DEVICES NMOSEPROM M/ET2716 2K x 8 M2732A (4K x 8) M2764A (8K x 8) M27128A (16K x 8) M27256 (32K x 8) M27512 (64K x 8) UV EPROM . UV EPROM .

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

mask rom

Contextual Info: M23C1000/1010 G/J CMOS MASK ROM (128Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072x 8 bit organization • Fast access tim e: 120ns(max). • Supply voltaga: singie+5V •Current consumption Operating: 30 mA(max.) Standby: 50/<A(max.) • Fully static operation

sgs thomson

Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
Contextual Info: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns

IP3210

Abstract: M23C1001 AAZZ m23c100
Contextual Info: S C S -T H O M S O N 0 g ( Q [i[L iW ( Q ) i0 i M 2 3 C 1001 CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns • LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20^iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION