M12D16161A Search Results

Contextual Info: ESMT M12D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT Preliminary M12D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)

M52D16161A

Abstract: M52D16161A-10BG M52D16161A-10TG cke 2009 amp
Contextual Info: ESMT M52D16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.