M0036AB Search Results

IRFG014

Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
Contextual Info: TOR HIGH-REL HEXFETs INTERNATIONAL. RECTIFIER - INTERNA TIO NAL RECTIFIER SbE D ' SSSHSa 00105b? T • TO-61 Isolated Package T - 3°l - 03 N-CHANNEL Types Vd s Iq cant Rd S(ON (max) Tq = 25°C |q m pulsed P0 max Case Style Bulletin V a A A W IRFH150

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

Contextual Info: Government and Space Products International IQ R Rectifier •d Pa rt Num ber b vdss R DS on (V) (£ 1 T f= 2 S °C (A) Pd @ Tr= 2 5 °C T f= 10 0 °C (A ) (W ) Fax on Dem and Num ber Case O u t lin e Key Herm etic Packages HEXFET Power MOSFETs LCC IRf-'E9220

HEXFETs FETs

Abstract: h184
Contextual Info: D a ta INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7HO N-CHANNEL RAD HARD 100 Volt, 0.700, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

IRFG1Z0

Abstract: irfh25 irfg9110 IRFH150
Contextual Info: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

IRH250

Abstract: TO-254AA Package IRHF130 IRHF230 hexfets IRHM450 IRHM150 IRHG110
Contextual Info: RADIATION HARD HEXFETs — INTERNATIONAL RECTIFIER 2bE INTERNATIONAL RECTIFIER IT O R D 4ÔSS4S2 GOlDSbö 1 T-3Ì-Ò3 • RADIATION HARD HEXFETS N-CHANNEL Types Vos V 1q com R d s io n max) TC - 25°C 'dm pulsed Pd max n A A W Bulletin Case Style SMD-1

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

Contextual Info: Data Sheet No. PD-9.67DA INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7110 N-CHANNEL RAD HARD 100 Volt, 0.7DQ, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

2N7334

Abstract: 2N7334 JANTX IRFG110 JANTX2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International

Contextual Info: Provisional D atasheet No. P D -9.1711 International IOR Rectifier R E P E T IT IV E A V A L A N C H E A N D dv/dt R A T E D IRHG7214 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 250Volt, 2.25Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

IR2113L

Contextual Info: Other Products from IR Government and Space PICs IR2110, IR2113 High Voltage MOS Gate Driver I vS Offset FEATURES • Drives a pair of HEXFETs or IGBTs • Two Independent Channel Drivers —One Floating High Side Driver —One Ground Referenced Low Side Driver

9437B

Contextual Info: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs

HEXFETs FETs

Abstract: I-242 I-239 160 P2 0 075A 5V 2N7335 IRFG110 IRFG9110 JANTXV2N7335 fg91
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER I R HEXFET TRANSISTORS 4PCHANNEL POWER MOSFETb 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE -100 Volt, 1.4 Ohm (P-Channel) IRFG9HO 2N 7335 JANTXSN7335 JANTXVSN7335 [REF: MIL-S-1S500/59S] Product Summary

2N7336

Abstract: JANTXV2N7336 tp 26c 436D IRFG6110 JANTX2N7336 irfgg110
Contextual Info: Data Sheet No. PD-9.436D I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SIVI7336 JA N TX 2N 7336 JA N TX V S N 7336 COMBINATION N AND P CHANNEL [S EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-1S500/59S]

Contextual Info: International la i Rectifier Power Integrated Circuits High Voltage MOS Gate Driver FEATURES • Drives a pair of HEXFETs or IGBTs • Two Independent Channel Drivers — One Floating High Side Driver — One Ground Referenced Low Side Driver • Operates to 500V

Contextual Info: Government/ Space Products International ^Rectifier PIC — High Reliability Type IR2110L/IR2110E High Voltage M OS Gate Driver FEATURES • Drives a pair of H EXFETs or IGBTs • Two Independent Channel Drivers — One Floating High Side Driver — One Ground Referenced Low Side Driver

Contextual Info: Data Sheet No. PD-9.812A INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED H E X F E T T R A N S IS T O R S I R H G 6 1 1 Q COMBINATION OF RAD HARD N-CHANNEL AND P-CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAM IC SIDE BRAZED PACKAGE

Contextual Info: International IQ R Rectifier Government and Space Products to Part Number ByDSS v DS(on) m T f =25°C (A) T ,= I00°C C (A) Pd @ Tc - 25°C (W) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET® Power MOSFETs TO-259AA N-Channel ÏRFI064 60

H157 ic

Abstract: H156
Contextual Info: Data Sheet No. PD-9.812A INTERNATIONAL RECTIFIER I Ö R AVALANCHE ENERGY AND dv/dt RATED H E X F E T T R A N S IS T O R S IRHG6110 COMBINATION OF RAD HARD N-CHANNEL AND P-CHANNEL S EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE

IRFG5110

Abstract: 9437B PN channel MOSFET 10A tp 26c 437B MO-036AB KJJ 15 X1DV
Contextual Info: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS COMBINATION INI AND P CHANNEL 8 EACH] POWER MOSFETs IRFG5110 o 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs