irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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Original
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4246A
IRHG567110
MO-036AB)
IRHG563110
MO-036AB
O-254AA
22JGQ045SCV
irf5n5210sc
IRHNA57064SCS
IRHM597260
irf5n5210
irhna597160scs
irhf7110scs
IRHG57110
IRHNA57264SESCS
35CLQ045SCS
12CLQ150SCS
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PDF
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IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5
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Original
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94046B
IRHNJ597230
IRHNJ593230
O-254AA
22JGQ045SCV
22GQ100SCV
25GQ045SCS
IRHNA57064SCS
IRHNJ597230SCS
IRHNJ9130SCS
IRHG6110SCS
IRHY7434
IRHE57130SCS
8CLJQ045SCV
IRHNJ57034SCS
irfy9230
35CLQ045SCS
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IRFG014
Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
Text: TOR HIGH-REL HEXFETs INTERNATIONAL. RECTIFIER - INTERNA TIO NAL RECTIFIER SbE D ' SSSHSa 00105b? T • TO-61 Isolated Package T - 3°l - 03 N-CHANNEL Types Vd s Iq cant Rd S(ON (max) Tq = 25°C |q m pulsed P0 max Case Style Bulletin V a A A W IRFH150
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OCR Scan
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00105b?
IRFH150
1RFH250
IRFH350
IRFH450
T0-210AC
IRFH9140
M0036AB
IRFG014
IRFG110
smd 9410
s 9413
9410 N-channel
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Untitled
Abstract: No abstract text available
Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17
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OCR Scan
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IRFG110
2N7334
JANTX2N7334
JANTXV2N7334
IRFG5110*
N7335
JANTXV2N7335
IRFV064
IRFV360
IRFV460
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PDF
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Untitled
Abstract: No abstract text available
Text: Government and Space Products International IQ R Rectifier •d Pa rt Num ber b vdss R DS on (V) (£ 1 T f= 2 S °C (A) Pd @ Tr= 2 5 °C T f= 10 0 °C (A ) (W ) Fax on Dem and Num ber Case O u t lin e Key Herm etic Packages HEXFET Power MOSFETs LCC IRf-'E9220
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OCR Scan
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E9220
1RFE9230
JANTX2N6845U
JANTX2N6847U
JANTXV2N6845U
JANTXV2N6847U
JANTXV2N6849U
O-254AA
O-257AA
M0-036AB
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PDF
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HEXFETs FETs
Abstract: h184
Text: D a ta INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7HO N-CHANNEL RAD HARD 100 Volt, 0.700, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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OCR Scan
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1x105
1x1012
H-184
IRHG7110
H-185
HEXFETs FETs
h184
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PDF
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IRFG1Z0
Abstract: irfh25 irfg9110 IRFH150
Text: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15
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OCR Scan
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O-258
IRFV360
IRFV460
O-258
IRFH150
IRFH250
IRFH350
IRFH450
O-210AC
IRFG110
IRFG1Z0
irfh25
irfg9110
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PDF
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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OCR Scan
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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PDF
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IRH250
Abstract: TO-254AA Package IRHF130 IRHF230 hexfets IRHM450 IRHM150 IRHG110
Text: RADIATION HARD HEXFETs — INTERNATIONAL RECTIFIER 2bE INTERNATIONAL RECTIFIER IT O R D 4ÔSS4S2 GOlDSbö 1 T-3Ì-Ò3 • RADIATION HARD HEXFETS N-CHANNEL Types Vos V 1q com R d s io n max) TC - 25°C 'dm pulsed Pd max n A A W Bulletin Case Style SMD-1
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OCR Scan
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IRHN25Q
IRHN450
IRHE120
IRHE130
MO-Q36B
M0036AB
IRHG110
T0-205AF
IRHF130
IRHF230
IRH250
TO-254AA Package
hexfets
IRHM450
IRHM150
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PDF
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2N7334
Abstract: IRFG110 JANTXV2N7334
Text: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]
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OCR Scan
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IRFG110
JANTXV2N7334
MIL-S-19500/5S7]
2N7334
I-207
JANTXV2N7334
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.67DA INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7110 N-CHANNEL RAD HARD 100 Volt, 0.7DQ, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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OCR Scan
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IRHG7110
1x106
1x10s
1x1012
H-184
IRHG7110
H-185
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PDF
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2N7334
Abstract: 2N7334 JANTX IRFG110 JANTX2N7334
Text: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International
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OCR Scan
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IRFG110
SN7334
JANTX2N7334
JANTXVSN7334
I-206
IRFG110,
2N7334
I-207
2N7334 JANTX
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PDF
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Untitled
Abstract: No abstract text available
Text: Provisional D atasheet No. P D -9.1711 International IOR Rectifier R E P E T IT IV E A V A L A N C H E A N D dv/dt R A T E D IRHG7214 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 250Volt, 2.25Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y
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OCR Scan
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IRHG7214
IRHG8214
250Volt,
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PDF
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JANTX2N7334
Abstract: irfy430
Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6
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OCR Scan
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irfg110
M0-036AB
2n7334
jantx2n7334
jantxv2n7334
irfg5110
irfg6110
2n7336
irfy430
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PDF
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IR2113L
Abstract: No abstract text available
Text: Other Products from IR Government and Space PICs IR2110, IR2113 High Voltage MOS Gate Driver I vS Offset FEATURES • Drives a pair of HEXFETs or IGBTs • Two Independent Channel Drivers —One Floating High Side Driver —One Ground Referenced Low Side Driver
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OCR Scan
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IR2110,
IR2113
IR2110E
IR2113E
IR2110L
M0-036AB
IR2113L
IR2113L
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PDF
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9437B
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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OCR Scan
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IRFG5110
IRFG5110
I-222
9437B
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PDF
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HEXFETs FETs
Abstract: I-242 I-239 160 P2 0 075A 5V 2N7335 IRFG110 IRFG9110 JANTXV2N7335 fg91
Text: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER I R HEXFET TRANSISTORS 4PCHANNEL POWER MOSFETb 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE -100 Volt, 1.4 Ohm (P-Channel) IRFG9HO 2N 7335 JANTXSN7335 JANTXVSN7335 [REF: MIL-S-1S500/59S] Product Summary
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OCR Scan
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IRFG9110
2N7335
JANTXSN7335
JANTXV2N7335
MIL-S-19500/599]
I-242
IRFG9110,
I-243
HEXFETs FETs
I-242
I-239
160 P2 0 075A 5V
IRFG110
JANTXV2N7335
fg91
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PDF
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2N7336
Abstract: JANTXV2N7336 tp 26c 436D IRFG6110 JANTX2N7336 irfgg110
Text: Data Sheet No. PD-9.436D I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SIVI7336 JA N TX 2N 7336 JA N TX V S N 7336 COMBINATION N AND P CHANNEL [S EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-1S500/59S]
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OCR Scan
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IRFGG110
JANTX2N7336
JANTXVSN7336
MIL-S-1S500/59S]
VGS-10V*
I-235
IRFG6110,
2N7336
I-236
JANTXV2N7336
tp 26c
436D
IRFG6110
irfgg110
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PDF
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Untitled
Abstract: No abstract text available
Text: International la i Rectifier Power Integrated Circuits High Voltage MOS Gate Driver FEATURES • Drives a pair of HEXFETs or IGBTs • Two Independent Channel Drivers — One Floating High Side Driver — One Ground Referenced Low Side Driver • Operates to 500V
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OCR Scan
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IR2110L
IR2110C
M0-036AB
IR2110S
IR2118
IR2110
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PDF
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Untitled
Abstract: No abstract text available
Text: Government/ Space Products International ^Rectifier PIC — High Reliability Type IR2110L/IR2110E High Voltage M OS Gate Driver FEATURES • Drives a pair of H EXFETs or IGBTs • Two Independent Channel Drivers — One Floating High Side Driver — One Ground Referenced Low Side Driver
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OCR Scan
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IR2110L/IR2110E
t50V/ns)
IR2110L
M0-036AB
IR2110E
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.812A INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED H E X F E T T R A N S IS T O R S I R H G 6 1 1 Q COMBINATION OF RAD HARD N-CHANNEL AND P-CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAM IC SIDE BRAZED PACKAGE
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OCR Scan
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1x106
1x105
H-172
IRHG6110
H-173
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PDF
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier Government and Space Products to Part Number ByDSS v DS(on) m T f =25°C (A) T ,= I00°C C (A) Pd @ Tc - 25°C (W) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET® Power MOSFETs TO-259AA N-Channel ÏRFI064 60
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OCR Scan
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RFI064
1RFI260
IRFI360
RFI460
O-259AA
O-254AA
O-257AA
M0036AB
O-205AF
O-258AA
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PDF
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H157 ic
Abstract: H156
Text: Data Sheet No. PD-9.812A INTERNATIONAL RECTIFIER I Ö R AVALANCHE ENERGY AND dv/dt RATED H E X F E T T R A N S IS T O R S IRHG6110 COMBINATION OF RAD HARD N-CHANNEL AND P-CHANNEL S EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE
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OCR Scan
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IRHG6110
IRHG6110
H-172
H-173
H157 ic
H156
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PDF
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IRFG5110
Abstract: 9437B PN channel MOSFET 10A tp 26c 437B MO-036AB KJJ 15 X1DV
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS COMBINATION INI AND P CHANNEL 8 EACH] POWER MOSFETs IRFG5110 o 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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OCR Scan
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IRFG5110
IRFG5110
9437B
PN channel MOSFET 10A
tp 26c
437B
MO-036AB
KJJ 15
X1DV
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PDF
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