14046
Abstract: dian M-BOND GA-61 LD50 14046 application note GA-61 M-BOND GA-61 part b M-Bond GA - 61 A
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond GA-61 Part B November 23, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM017I 919-365-3800 CHEMTREC 1-800-424-9300 (U.S.)
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GA-61
MGM017I
805-FRM011
14046
dian
M-BOND GA-61
LD50
14046 application note
GA-61
M-BOND GA-61 part b
M-Bond GA - 61 A
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28064-14-4
Abstract: M-BOND GA-61 CAS No. 28064-14-4 A 27611 MATERIAL SAFETY 29CFR1910 transistor A 27611 LD50 polyglycidyl M-Bond GA - 61 A
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond GA-61 Part A November 23, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM016I 919-365-3800 CHEMTREC 1-800-424-9300 (U.S.)
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GA-61
MGM016I
805-FRM011
28064-14-4
M-BOND GA-61
CAS No. 28064-14-4
A 27611
MATERIAL SAFETY
29CFR1910
transistor A 27611
LD50
polyglycidyl
M-Bond GA - 61 A
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OC 74 germanium transistor
Abstract: 27s21 OC 76 germanium transistor
Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005-BD April 2007 - Rev 19-Apr-07 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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19-Apr-07
L1005-BD
MIL-STD-883
XL1005-BD-000V
XL1005-BD-000W
XL1005-BD-EV1
XL1005
OC 74 germanium transistor
27s21
OC 76 germanium transistor
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material declaration semiconductor package
Abstract: asbestos safety material declaration vishay 89901 DO-219AB 58018
Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their
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LLP-75
06-May-04
material declaration semiconductor package
asbestos safety
material declaration vishay
89901
DO-219AB
58018
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NE68135
Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o
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NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
NE68139-T1
NE68139R-T1
transistor npn d 2078
common emitter bjt
transistor bf 494
NE68133-T1B-A
mje 3009
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BJT characteristics
Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
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NE681
BJT characteristics
NE68135
NE AND micro-X
2SC4227
2SC5007
2SC5012
NE68100
NE68118
NE68119
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transistor "micro-x" "marking" 102
Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
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NE681
transistor "micro-x" "marking" 102
laser drive ic 3656
4558 L
IC 2030 PIN CONNECTIONS
LB 1639
mje 3009
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NE46134-T1
Abstract: No abstract text available
Text: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high
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NE46100
NE46134
NE46134
NE461
NE46100,
OT-89)
NE46134-T1
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OC 74 germanium transistor
Abstract: No abstract text available
Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883
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01-Sep-05
L1005
MIL-STD-883
OC 74 germanium transistor
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pHEMT transistor MTBF
Abstract: L1005 84-1LMI
Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 May 2006 - Rev 10-May-06 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout
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L1005
10-May-06
MIL-STD-883
pHEMT transistor MTBF
L1005
84-1LMI
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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D-81541
14-077S
Q62702-D1353
Q62702-G172
Q62702-G173
ujt 2646
TRANSISTOR J 5804
label infineon barcode
msc 1697
MSC 1697 IC pin diagram
Rohde und Schwarz Active Antenna HE 011
cd 6283 audio
smd transistor v75
log tx2 0909
IC data book free download
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RT54SX72S
Abstract: RT54SX-S voter PAR64 REQ64 TM1019 CQFP256
Text: Advanced v0.2 RT54SX-S RadTolerant FPGAs for Space Applications Sp e ci a l F ea t ur es f o r Sp a ce • First Actel FPGA Designed Specifically for Space Applications • Up to 2,012 Additional SEU Hardened Flip-Flops Eliminate Software TMR Necessity LETth > 40, GEO SEU Rate <
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RT54SX-S
100krad
RT54SX72S
RT54SX-S
voter
PAR64
REQ64
TM1019
CQFP256
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RTSX32
Abstract: voter PAR64 REQ64 RT54SX72S RT54SX-S TM1019 Cqfp256
Text: Advanced v0.2 RT54SX-S RadTolerant FPGAs for Space Applications Sp e ci a l F ea t ur es f o r Sp a ce • First Actel FPGA Designed Specifically for Space Applications • Up to 2,012 Additional SEU Hardened Flip-Flops Eliminate Software TMR Necessity LETth > 40, GEO SEU Rate <
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RT54SX-S
100krad
RTSX32
voter
PAR64
REQ64
RT54SX72S
RT54SX-S
TM1019
Cqfp256
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m
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NE76000
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NE02136
Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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b427414
000137S
NE021
3l-17
NE02136
2SC2570
NE02135 equivalent
2sc2570 transistor
NE02103
k427
2SC1560
2sc2351 equivalent
LM5741
GHZ micro-X Package
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2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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bM27414
QDDB354
T3V-23
NE021
2SC2570
2sc2570 transistor
transistor 2sc2570
NE02103
NE02133
2sc1560
ic 2SC2570
NE02132
NE02100
NE02135
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz
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NE24200
NE24200
24-Hour
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Untitled
Abstract: No abstract text available
Text: HEIjJLETT-PACKARDn CMPNTS 2DE D H 44475Ö4 OOQSSSfl 4 E9 T - Low N oise Transistors HXTR-6001 Chip * 2N6617 HXTR-6101, TX Technical Data 2N6742 ( h x t r - 6102, t x and TXV 2N6618 (HXTR-6103, TX and TXV) 2N6743 (HXTR-6104, TX and TXV) Features D escription
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HXTR-6001
2N6617
HXTR-6101,
2N6742
2N6618
HXTR-6103,
2N6743
HXTR-6104,
MIL-S-19500,
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HXTR-5102
Abstract: HXTR-5102TX hxtr4103 HXTR-5104TX HXTR-5002 HXTR-5104TXV HXTR 5104
Text: HEWLETT- PACKARDn CMPNTS 2GE D B 44475Ô4 000554^ 3 HEW LETT PACKARD L inear P ow er Transistors HXTR-5002 Chip Technical D ata HXTR-4103 HXTR-5102, TX and TXV HXTR-5104, TX and TXV F eatu res D escrip tion • H igh O u tp u t P ow er 29 dBm Typical PIdBat 2 GHz
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HXTR-5002
HXTR-4103
HXTR-5102,
HXTR-5104,
MIL-S-19500,
HXTR-5102
MIL-STD-750
HXTR-5102TX
hxtr4103
HXTR-5104TX
HXTR-5104TXV
HXTR 5104
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HXTR3685
Abstract: HXTR-7111 HXTR-3615 hxtr-3685 HXTR3 HXTR-7111TXV hxtr-7011
Text: HEWLETT-PACKARD-. CMPNTS SDE D B M447SÖ4 QQOSSbb 3 El T " 31“ /? T-31'21 Low N oise Transistors HXTR-7011 Chip HXTR-7111, TX and TXV HXTR-3615, TX and TXV HXTR-3645, TX and TXV HXTR-3675, TX and TXV HSMX-3635 HSMX-3655 Technical Data Features D escription
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M447SÃ
HXTR-7011
HXTR-7111,
HXTR-3615,
HXTR-3645,
HXTR-3675,
HSMX-3635
HSMX-3655
MIL-S-19500,
HXTR3685
HXTR-7111
HXTR-3615
hxtr-3685
HXTR3
HXTR-7111TXV
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Y25n120d
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4
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Y25N120D/D
Y25n120d
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Untitled
Abstract: No abstract text available
Text: 013760=1 Q Q Q G C m H3E D SEÎ1ITR0N INDUSTRIES LTD 2 ŒSLCB r- SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6V8 - 200 Volts ■600W Peak Pulse Power 1.5 Watt Steady State ■Provisional Release ■High Rel APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,
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DO-35
DO-41
DO-15
DO-201AD
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PDF
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6182AIN
Abstract: lm 2309
Text: & National Semiconductor LM6182 Dual 100 mA Output, 100 MHz Current Feedback Amplifier General Description Features The LM 6182 dual current fe e d ba ck am plifier offers an un paralleled com bination of bandw idth, slew -rate, and output current. Each a m plifier can directly drive a 2V signal into a
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LM6182
6182AM
6182AIN
6182IN
6182AIM
6182IM
lm 2309
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