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Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1231E6PM Microcontroller identical to LM4F110E5QR D ATA SH E E T D S -T M 4C 1231 E 6 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 336A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1231E6PM
LM4F110E5QR)
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Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237D5PM Microcontroller identical to LM4F130C4QR D ATA SHE E T D S -T M 4C 1237 D5 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 356A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1237D5PM
LM4F130C4QR)
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Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PZ Microcontroller identical to LM4F132H5QC D ATA SHE E T D S -T M 4C 1237 H6 P Z - 1 4 9 9 5 . 2 6 6 7 S P M S 362A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1237H6PZ
LM4F132H5QC)
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Untitled
Abstract: No abstract text available
Text: E le p e r T te s t p la T c tr ic a u s o n n s a n e s t M l ix d e p ro p e rty o f m a y n o t b e p u b lis h e d o r w ith o u t e x b y T u s o n ix I n c . M A R K E T IN G D IM E N S IO N S IN D IM E N S IO N S IN T e s t in g s ta n d a rd M il- S td - 2 0 2
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Untitled
Abstract: No abstract text available
Text: Ordering code A 3 9 6 3 W Y -X P XXX © © T @ (3) @ — A ± 0 . 15 S e r ie s No. C o n n e cto r type: W V=Vertical No. o f circuits O ption code: R = R o u n d pin, Dim. C :3 .1 8 m m , D :1 7 .8 0 m m Y R 1 = R o u n d pin, Dim. C :4 .4 5 m m , D :1 9 .0 5 m m
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5000MQ
UL94V-0
EN1001190044
A3963WV-XPR
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Untitled
Abstract: No abstract text available
Text: O rdering code A 3 9 6 3 W Y -X P XXX © © T @ ® @ A±0.05 — A ± 0 .15 Circuit 1 Series No. Connector type: WV=Vertical No. of circuits Option code: B lank=D im . C :3.18 m m , D :17.80m m Y01 =D im . C :4.45m m , D :19.05m m 3.96±0.05 in CN
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5000MQ
UL94V-0
EN1001190044
A3963WV-XP
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PAN 3504
Abstract: No abstract text available
Text: LITEM £I SE M IC O N D U C T O R S AKBPC3502 thru 3508 KBPC KBPC-W _i_ I FEATURES • 1 1 1 Controlled A valanche Series w ith 250V, p o t, bo 442 {11 23 I | 4 1 432 H 0 9 7 )t .Q,M A X t i -r 4 5 0 V, 6 5 0 V, and 8 5 0 V minimum 1 2 M IN. 130.5) ♦
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AKBPC3502
E950olerance
DO-15
PAN 3504
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN EPITAXIAL PLANAR TYPE DESCRIPTION O UTLINE DRAWING 2 S C 2 6 2 9 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2629
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Untitled
Abstract: No abstract text available
Text: LITEM? I SEMICONDUCTORS P B P C 1 0 0 1 t h r u 1 0 0 7 PBPC-8 .500 .094 2 .3 8 x 4 5 °C H A M H O L E FO R # 6 SCREW .158 (4.0) .142 (3.61 2 9 0 (7 37) .2 1 0 (5.33) \ IJ 1 2 .7 ) . K - H AC T •770 (19.56) 7 3 0 (18.54) I 1 AC FEATURES .290 (7.37) R a tin g to 1 0 0 0 V P R V
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DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: c LOC BY AMP INCORPORATED. ALL RIGHTS RESERVED. COPYRIGHT 1 998 DIST EA R E V IS IO N S 51 LTR OUTPUT PORTS D _A_ DUST CAP NOT SHOWN 4 PLC P Tx S Rx M S Tx I I 1 1. CONNECTOR KEYING CONFORMS TO ANSI X 3 T 9 .5 / 8 4 - 4 8 . LED 1 0 8 -5 6 0 0 4
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EC901
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hp 502
Abstract: hp502 CLP-202 K705 k706 738s K714 ir p924 k734 SMD-C3
Text: o._8 8 OPPÖÖO 7 7 7 oooo 7777777777777777777777777777777777777777 71T’ 7,|71717, Tl71717171711n717171T7,717, T171717, 7171T,7î T,T,T,T o , ' \ • 'm o œ œ c n r o o ) u i m u i u i u i u i u i M N i r o N ) O O O Q O O ü - * o o Q Q O ,n x !r? ; ^ ;i'- - iO > c n A 0 3 î \s - i a > ''J O > A O > fo -k o>iro-‘ O C i> a » A c 3 N > -* O O ü iA c 3 N > -* '
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Tl71717171711
171T7
T171717,
7171T
hp 502
hp502
CLP-202
K705
k706
738s
K714
ir p924
k734
SMD-C3
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67717 8 7 2 9 0 5 M H z , 3 W , FM FOR M O B ILE RADIO A P P LIC A TIO N DESCRIPTION M 67717 is a th ick film RF po w er m odule sp ecifically OUTLINE DRAWING Dimensions in mm designed fo r 8 7 2 ~ 9 0 5 M H z , 3W F M m obile radios.
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M67717
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TA8172AF
Abstract: ta8172 TC9187 HA*2134 NC3S300 ha12429 upc1348 901-045 IA1001 tc9222
Text: TAIYO YUDEN TAIYO YUDEN . ÛÛ 35 47 5 □ 0 G D C112 3T3 • bOE D -CUSAJ INC I TYI H Y B R ID ICs CAR AUDIO List of standard products of hybrid 1C for car audio set TUNNER N ew , product M odel P age Circuit function and application Main 1C used and their specification and features
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IF4S210
NC3S300
KC820A
NC8712
BF3S700
MX3S400
NMX3S900
NMX3S920
NMX3S960
NMX4S930
TA8172AF
ta8172
TC9187
HA*2134
ha12429
upc1348
901-045
IA1001
tc9222
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M57793
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57793 9 0 3 9 05M H z, SW , FM FOR M O BILE RADIO APPLICATIO N DESCRIPTION M 5 7 7 9 3 is a th ic k film OUTLINE DRAWING RF pow er m odule sp e cifica lly de D im e n sio n s in m m signed fo r 9 0 3 ~ 9 0 5 M H z, 5W FM m ob ile radios.
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M57793
M57793
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Untitled
Abstract: No abstract text available
Text: lite :»:i PBPC301 thru PBPC307 SEM ICO NDUCTORS VO LTAG E RANGE 50 to 1 00 0 V olts CURRENT 3.0 Am peres PBPC-3 4 4 5 {11 3 .405 10.3) H O LE FO R # 6 SCREW K "H AC 158 (4.0) T 142 (3.6) 6 2 0 (15.75) features .5 8 0 (14 73) .107 (2.7) .067 (1 7) • R a tin g to 1 0 0 0 V P R V
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PBPC301
PBPC307
D0201AD
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Abstract: No abstract text available
Text: LITE ? I SEMICONDUCTORS SBL8 SBR8 SERIES TO-220 FEATURES Î3 9 3 531 • P lastic package has U /L • F la m m a b ility C la ssifica tio n 9 4 V -0 • Exceeds e n v iro n m e n ta l standards o f M IL -S -1 9 5 0 0 • M etal o f s ilic o n re c tifie r, m a jo rity ca rrie r c o n d u c tio n
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O-220
D0201AD
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Untitled
Abstract: No abstract text available
Text: H igh P erform ance AS7C10 2 4 AS7C1024L 128KX8 CMOS SRAM A 128KX8 CMOS SRAM Features • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b its • E asy m e m o r y e x p a n s i o n w i t h C E 1 , C E 2, O E in p u t s • H ig h s p e e d • T T L -c o m p a tib le , th r e e - s t a te I / O
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AS7C10
AS7C1024L
128KX8
128KX8
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M 57791 8 9 0 —9 15M H z, 3W , FM FO R M O BILE RADIO APPLICATIO N DESCRIPTION M57791 is a thick film R F power module specifically designed for 8 9 0 ~ 9 1 5M Hz, 3W FM mobile radios. OUTLINE DRAWING Dimensions in mm FEATURES
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M57791
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Untitled
Abstract: No abstract text available
Text: LITEM í I s e m ic o n d u c t o r s DF1500M thru DF1510M VO LTAG E RANGE 50 to 1000 Volts CURRENT 1.5 Amperes 1.5 AMPS. GLASS PASSIVATED SILICON BRIDGE RECTIFIERS ; DF + FEATURES R a tin g to 1 0 0 0 V P R V Surge overload rating to 4 5 A m p e re s peak
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DF1500M
DF1510M
D0201AD
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Untitled
Abstract: No abstract text available
Text: M ITSU B IS H I M IC R O C O M P U T E R S M 3 7 1 0 2 M 8 -X X X S P /F P M 3 7 2 0 1 M 6 -X X X S P S I N G L E - C H IP 8 -B IT C M O S M I C R O C O M P U T E R for V O L T A G E S Y N T H E S I Z E R with O N - S C R E E N D I S P L A Y C O N T R O L L E R
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64-pin
80-pin
0-P07,
0-P17,
0-P27,
0-P36,
0-P47i
P6q-P67
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MAX909ESA
Abstract: No abstract text available
Text: jv w v x a / sa 19-0129; Rev. 3; 7/94 S in g le /D u a l/Q u a d H ig h •Speed, U ltra L o w -P o w e r, S in g le • S u p p ly T T L C o m p a ra to rs Because they are micropower, high-speed com para tors that operate from a single +5V supply and include
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MAX907/MAX908/MAX909
MAX907;
MAX908:
MAX909ESA
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Untitled
Abstract: No abstract text available
Text: L IT E M E MBR730 thru MBR760 SEMICONDUCTORS VOLTAGE RANGE •5 AMPS. SCHOTTKY BARRIER RECTIFIERS 30 to 60 Volts CURRENT 7.5 Amperes _ TQ -2 20 FEATURES • P lastic package has U /L • F la m m a b ility C la ssifica tio n 9 4 V -0
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MBR730
MBR760
DO-15
0201AD
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D15P5C7AT70
Abstract: 3705C 5005C
Text: PROFESSIONAL QUALITY, SUBMINIATURE-D CONNECTORS WIN-D Series FOR INDOOR/OUTDOOR NONHAZARDOUS ENVIRONMENTAL APPLICATIONS WHERE PROTECTION FROM DUST, RAIN, HOSE DIRECTED WATER AND LIMITED WATER IMMERSION IS REQUIRED 9 0 ° PRINTED BOARD MOUNT CO N NEC TO R INSIDE WALL
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1505C
2505C
3705C
5005C
D15P5C7AT70
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Untitled
Abstract: No abstract text available
Text: LITEM? I SE M IC O N D U C T O R S DF1500S thru DF1510S VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Ampere 1.5 AMPS. SURFACE MOUNT GLASS PASSIVATED SILICON BRIDGE DF-S .3 1 0 7 .9 1 — .2 9 5 (7.41—— .255 (6.5 h .2 4 5 ( 6 .2 H a . + F E A TU R ES J.
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DF1500S
DF1510S
DO-15
0201AD
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