LX5512BLQ Search Results

LX5512BLQ Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LX5512BLQ		Microsemi	Wireless LAN Power Amplifier; Package: MLPQ16_3x3;		Original	PDF
LX5512BLQ		Microsemi	InGaP HBT 2.4-2.5 GHz power amplifier.		Original	PDF
LX5512BLQ		Microsemi	Amplifier, InGaP HBT 2.4-2.5GHz Power Amplifier		Original	PDF
LX5512BLQTR		Microsemi	InGaP HBT 2.4-2.5 GHz power amplifier.		Original	PDF
LX5512BLQ-TR		Microsemi	Amplifier, InGaP HBT 2.4-2.5GHz Power Amplifier, Tape and Reel		Original	PDF

LX5512BLQ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LX5512B Abstract: LX5512BLQ LX5512BLQ-TR VB12 Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package	Original	PDF	LX5512B 19dBm 64QAM, 54Mbps) 140mA LX5512B 16pin 11b/g 45GHz LX5512BLQ LX5512BLQ-TR VB12
LX5512B Abstract: LX5512BLQ LX5512BLQ-TR VB12 Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package	Original	PDF	LX5512B 19dBm 64QAM, 54Mbps) 140mA LX5512B 16pin 11b/g 45GHz LX5512BLQ LX5512BLQ-TR VB12
LX5512B Abstract: LX5512BLQ LX5512BLQTR VB12 64QAM bipolar transistor 2.45 ghz s-parameter Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package	Original	PDF	LX5512B 19dBm 64QAM, 54Mbps) 140mA LX5512B 16pin 11b/g 45GHz LX5512BLQ LX5512BLQTR VB12 64QAM bipolar transistor 2.45 ghz s-parameter
Untitled Abstract: No abstract text available Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package	Original	PDF	LX5512B 19dBm 64QAM, 54Mbps) 140mA LX5512B 16pin 11b/g 45GHz
Untitled Abstract: No abstract text available Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package	Original	PDF	LX5512B 45GHz 19dBm 140mA 64QAM/ 54Mbps LX5512B