Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LX5506 Search Results

    SF Impression Pixel

    LX5506 Price and Stock

    Microchip Technology Inc LX5506LQ

    IC RF AMP 802.11A 4.5GHZ-6GHZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LX5506LQ Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Microchip Technology Inc LX5506MLQ

    IC RF AMP 802.11A 4.9GHZ-5.9GHZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LX5506MLQ Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.46632
    • 10000 $1.31251
    Buy Now

    Microchip Technology Inc LX5506MPQ

    IC AMP 802.11A 5.35GHZ 16MLPQ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LX5506MPQ Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    LX5506 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LX5506 Microsemi InGaP HBT 4.5 - 6GHz Power Amplifier Original PDF
    LX5506B Microsemi InGaP HBT 4 6GHz Power Amplifier Original PDF
    LX5506BLQ Microsemi InGaP HBT 4 6GHz Power Amplifier Original PDF
    LX5506B-LQ Microsemi Amplifier, InGaP HBT 4-6GHz Power Amplifier Original PDF
    LX5506B-LQ Microsemi InGaP HBT 4-6 GHz power amplifier. Original PDF
    LX5506B-LQTR Microsemi InGaP HBT 4-6 GHz power amplifier. Original PDF
    LX5506B-LQTR Microsemi Amplifier, InGaP HBT 4-6GHz Power Amplifier, Tape and Reel Original PDF
    LX5506E Microsemi Original PDF
    LX5506ELQ Microsemi Wireless LAN Power Amplifier Original PDF
    LX5506E-LQ Microsemi InGaP HBT 4.5-6 GHz power amplifier. Original PDF
    LX5506E-LQ Microsemi Amplifier, InGaP HBT 4-6GHz Power Amplifier Original PDF
    LX5506ELQ - Obsolete Microsemi Wireless LAN Power Amplifier Original PDF
    LX5506E-LQT Microsemi Amplifier, InGaP HBT 4-6GHz Power Amplifier, Tape And Reel Original PDF
    LX5506E-LQT Microsemi InGaP HBT 4.5-6 GHz power amplifier. Original PDF
    LX5506LQ Microsemi InGaP HBT 4.5-6 GHz power amplifier. Original PDF
    LX5506LQ Microsemi RF Amplifier, General purpose amplifier, Single channel, Chip, 6000 MHz, CLLCC, 16-Pin Original PDF
    LX5506-LQ Microsemi Wireless LAN Power Amplifier Original PDF
    LX5506-LQT Microsemi Amplifier, InGaP HBT 4.5 - 6GHz Power Amplifier, Tape and Reel Original PDF
    LX5506LQ-TR Microsemi InGaP HBT 4.5-6 GHz power amplifier. Original PDF
    LX5506LQ-TR Microsemi RF Amplifier, General purpose amplifier, Single channel, Chip, 6000 MHz, CLLCC, 16-Pin Original PDF

    LX5506 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    LX5506E

    Abstract: LX5506ELQ
    Text: LX5506E TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure U-NII band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is


    Original
    PDF LX5506E LX5506E LX5506ELQ

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total DC current. At higher supply voltage


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    Untitled

    Abstract: No abstract text available
    Text: LX5506B InGaP HBT 4 – 6GHz Power Amplifier TM P RODUCTION D ATA S HEET supply of 3.3V nominal , with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair. LX5506B is available in a 16-pin


    Original
    PDF LX5506B 26dBm 85GHz LX5506B 16-pin 18dBm

    LX5506E-LQ

    Abstract: LX5506E-LQT LX5506E
    Text: LX5506E TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure U-NII band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is


    Original
    PDF LX5506E LX5506E LX5506E-LQ LX5506E-LQT

    802.11a Amplifier

    Abstract: LX5506B LX5506BLQ
    Text: LX5506B TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION supply of 3.3V nominal , with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair.


    Original
    PDF LX5506B 26dBm 85GHz LX5506B 16-pin 802.11a Amplifier LX5506BLQ

    LX5506LQ-TR

    Abstract: LX5506 LX5506LQ
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506LQ-TR LX5506LQ

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 18dBm 64QAM/ 54Mbps 26dBm 25GHz 100mA 85GHz 190mA

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 18dBm 64QAM/ 54Mbps 26dBm 25GHz 100mA 85GHz 190mA

    LX5506

    Abstract: LX5506-LQ LX5506-LQT
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506-LQ LX5506-LQT

    LX5506B

    Abstract: LX5506B-LQ LX5506B-LQTR
    Text: LX5506B TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION supply of 3.3V nominal , with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair.


    Original
    PDF LX5506B 26dBm 85GHz LX5506B 16-pin LX5506B-LQ LX5506B-LQTR

    Untitled

    Abstract: No abstract text available
    Text: C O N F I D E N T I A L LX5506E TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure U-NII band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85


    Original
    PDF LX5506E 18dBm 64QAM/ 54Mbps 25GHz 18dBm 85GHz 26dBm 200mA

    LX5506

    Abstract: LX5506LQ LX5506LQ-TR
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506LQ LX5506LQ-TR

    LX5506

    Abstract: LX5506LQ LX5506LQ-TR
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506LQ LX5506LQ-TR

    LX5506M

    Abstract: No abstract text available
    Text: LX5506M 4 - 6 GHZ HBT POWER AMPLIFIER APPLICATION NOTE LX5506M HIGH GAIN, HIGH EFFICIENCY POWER AMPLIFIER AN-36 User Information Application Engineer: Yongxi Qian Copyright 2002 Rev. 1.0, 2005-04-12 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original
    PDF LX5506M AN-36

    transistor 451a

    Abstract: 818a msc LX5506MLQ LX5506M
    Text: C O N F I D E N T I A L LX5506M TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION linear output power for OFDM mask compliance. It also features an on-chip output power detector to help reduce BOM cost and board space in system


    Original
    PDF LX5506M LX5506M 16-pin transistor 451a 818a msc LX5506MLQ

    Untitled

    Abstract: No abstract text available
    Text: C O N F I D E N T I A L LX5506M TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION linear output power for OFDM mask compliance. It also features an on-chip output power detector to help reduce BOM cost and board space in system


    Original
    PDF LX5506M LX5506M 16-pin

    LX5506B

    Abstract: LX5506B-LQ LX5506B-LQTR
    Text: LX5506B TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION supply of 3.3V nominal , with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair.


    Original
    PDF LX5506B 26dBm 85GHz LX5506B 16-pin LX5506B-LQ LX5506B-LQTR

    LX5506

    Abstract: LX5506-LQ LX5506-LQT
    Text: LX5506 I N T E G R A T E D P R O D U C T S InGaP HBT 4.5 – 6GHz Power Amplifier P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%,


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 21dBm LX5506 16-pin InGaP14-893-2570 LX5506-LQ LX5506-LQT

    LX5506

    Abstract: LX5506-LQ LX5506-LQT
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original
    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506-LQ LX5506-LQT

    LX5506E

    Abstract: LX5506E-LQ LX5506E-LQT 64QAM
    Text: LX5506E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION differential output power detector pair to help reduce BOM cost and PCB board space for system implementation. LX5506E is available in a 16-pin


    Original
    PDF LX5506E LX5506E 16-pin 85GHz LX5506E-LQ LX5506E-LQT 64QAM

    ofdm amplifier

    Abstract: LX5506M LX5506MLQ
    Text: LX5506M InGaP HBT 4.5 – 6GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION of up to 20% at maximum linear output power for OFDM mask compliance. It also features an on-chip output power detector to help reduce BOM cost and board space in system implementation.


    Original
    PDF LX5506M LX5506M 16-pin ofdm amplifier LX5506MLQ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.


    Original
    PDF STA-6033 STA-6033 STA-6033â EDS-103643