Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LT2301 Search Results

    SF Impression Pixel

    LT2301 Price and Stock

    North Slope Chillers NSC2000-LT-230-1

    Chiller, 2 Ton, 10F to 45F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSC2000-LT-230-1 Bulk 1
    • 1 $9857
    • 10 $9857
    • 100 $9857
    • 1000 $9857
    • 10000 $9857
    		Buy Now

    North Slope Chillers NSC1000-LT-230-1

    Chiller, 1 Ton, 10F to 45F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSC1000-LT-230-1 Bulk 1
    • 1 $8156
    • 10 $8156
    • 100 $8156
    • 1000 $8156
    • 10000 $8156
    		Buy Now

    LT2301 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LT2301A

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		LT2301A 300us, 2007-Ver3 OT-23 PDF

    LT2301A

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		LT2301A 2007-Ver3 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		LT2301A 300us, OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		LT2301 LT2301 300us, OT-23 PDF

    LT2301

    Abstract: LT230
    Text: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		LT2301 LT2301 300us, 2008-Ver1 OT-23 LT230 PDF

    LT2301

    Abstract: 20A SOT-23
    Text: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		LT2301 LT2301 2008-Ver1 20A SOT-23 PDF

    LSP5522L

    Abstract: No abstract text available
    Text: LITELITE-ON SEMICONDUCTOR CORP. ON LITE DISCRETE DIVISION TVS SMAJ7.0A/ 9A SMAJ12A/ 15A SMAJ24A Schottky ESD B340A/ B360B B160/ B240A B2100A 1N5819WL FB340LM Bridge HD06 Switching BAT54A/C/S,WS 1N4148W/ WS LS4148W/WS BAV99W 2010 L15ESDL5V0NA-4 HDMI L30ESDL5V0C6-4 USB2.0


    Original     		SMAJ12A/ SMAJ24A B340A/ B360B B240A B2100A 1N5819WL FB340LM BAT54A/C/S 1N4148W/ LSP5522L PDF